Datasheet MP03-175-16, MP03-175-10, MP03-175-12, MP03-175-14 Datasheet (DYNEX)

MP03XXX 175 Series

MP03 XXX 175 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS5098-3.0 DS5098-4.0 January 2000

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type

Number

Repetitive

Peak
Voltages
V

DRM VRRM

MP03/175-16
MP03/175-14
MP03/175-12
MP03/175-10

Lower voltage grades available. 1800V product also available ­consult factory. For full description of part number see
"Ordering instructions" on page 3.

1600

1400

1200

1000

Conditions

T

= 125oC

(Vj)

I

= I
V
V

DRM

DSM

DRM

RRM

& V

& V

= 30mA

RSM

RRM

respectively

=

+ 100V

CURRENT RATINGS - PER ARM

KEY PARAMETERS

V

DRM

I

TSM

I

(per arm) 175A

T(AV)

V

isol

1600V
6800A

2500V

CIRCUIT OPTIONS

Code

HBT

HBP

HBN

Circuit

PACKAGE OUTLINE

Module outline type code: MP03.

See Package Details for furtyher information.

Symbol

I

T(AV)

I

T(RMS)

Parameter

Mean on-state current

RMS value

Conditions

Halfwave, resistive load

T

= 75oC

case

T

case

T

case

T

heatsink

T

heatsink

= 75oC
= 85oC

= 75oC
= 85oC

Max.

175
146
148
123

Units

A
A
A
A

A275

1/10

MP03 XXX 175 Series

SURGE RATINGS - PER ARM

Symbol

I

TSM

I2t

Surge (non-repetitive) on-state current

I2t for fusing

Parameter

THERMAL & MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-hs)

T

vj

T

sto

Thermal resistance - junction to case
per Thyristor or Diode

Thermal resistance - case to heatsink
per Thyristor or Diode

Virtual junction temperature

Storage temperature range

Parameter

Conditions Max.

10ms half sine;
Tj = 125oC

10ms half sine;
Tj = 125oC

Conditions

dc
halfwave

3 phase
Mounting torque = 5Nm

with mounting compound

VR = 0
VR = 50% V
VR = 0

VR = 50% V

RRM

RRM

6800

5500
231000
150000

Max.

0.21

0.22

0.23

0.05

125

-40 to 125

Units

A

A
A2s
A2s

Units

o

C/W

o

C/W

o

C/W

o

C/W

o

C

o

C

isol

Isolation voltageV

Commoned terminals to base plate
AC RMS, 1min, 50Hz

2.5

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

TM

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

On-state voltageV
Peak reverse and off-state current
Linear rate of rise of off-state voltage 200*

Rate of rise of on-state current

Threshold voltage
On-state slope resistance

Parameter

Conditions

At 500A, T
At V

RRM/VDRM

To 67% V

From 67% V

= 25oC - See Note 1

case

, Tj = 125oC

= 125oC

DRM Tj

to 500A Repetitive 50Hz

DRM

Gate source 10V, 5Ω
Rise time 0.5µs, Tj =125oC

At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1

UnitsMax.

1.3 V
30

V/µs

100 A/µs

0.75

kV

mA

V0.98

mΩ

2/10

GATE TRIGGER CHARACTERISTICS AND RATINGS

MP03XXX 175 Series

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage V5.0­Peak forward gate current
Peak gate power
Mean gate power

Parameter

V

= 5V, T

DRM

V

= 5V, T

DRM

V

= 5V, T

DRM

Anode positive with respect to cathode
Anode negative with respect to cathode

Anode positive with respect to cathode
tp = 25µs-

ORDERING INSTRUCTIONS

Part number is made up as follows:
MP03 HBT 175 - 12

MP = Pressure contact module
03 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
175 = Nominal average current rating at T
12 = V

RRM

/100

= 75oC

case

Conditions

= 25oC

case

= 25oC

case

= 25oC

case

Examples:
MP03 HBP175-12

MP03 HBN175-16
MP03 HBT175-10

Typ.

Max.

-

-

150

-

0.25

-

-

0.25

-

3.0

30

10

100

5

Units

V

mA

V
V

V

A­W
W

NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN.

Types HBP and HBN can also be supplied with diode polarity reversed, to special order.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation
may be calculated by use of V
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.

The heatsink surface must be smooth and flat; a surface finish of
N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.

and rT information in accordance

T(TO)

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.

After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.

3/10

MP03 XXX 175 Series

CURVES

2000

Measured under pulse conditions

- (A)

F

1500

1000

500

Instantaneous forward current I

Tj = 150˚C

0

0.5 1.0 1.5 2.0 2.5

Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1

100

Pulse

Pulse Frequency Hz

Width

50

100
100
100
100
100

10

V

- (V)

GT

FGM

10

µs
20

25
100
500

1ms

10ms

1.0

Gate trigger voltage V

Upper limit 99%

V

GD

Instantaneous forward voltage V

Table gives pulse power P

100
100

100
100
100

50

400
100

100
100

25

-

-

-

Tj = 25˚C

Tj = 125˚C

Lower limit 1%

- (V)

F

10W

5W

T

j

= -40˚C

in watts

GM

75W

50W

100W

4/10

0.1

0.001 0.01 0.1 1.0 10
Gate trigger current I

Fig. 2 Gate trigger characteristics

GT

- (A)

I

FGM

MP03XXX 175 Series

0.3
R

th(j-hs)

R

th(j-c)

0.2

0.1

Thermal Impedance - (˚C/W)

0

0.001 0.010 0.100 1.0 10 100
Time - (s)

Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)

15

10

5

I2t

0

Peak half sine wave on-state current - (kA)

1

10 1 2 3 4 5 50

ms cycles at 50Hz

Duration

Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V

RRM

I

2

t value - A

2

s x 10

180

3

140
100

60

, T

= 125˚C (Thyristor or diode)

case

5/10

MP03 XXX 175 Series

350

300

250

180˚

120˚

200

90˚

60˚

150

30˚

100

50

On-state power loss per device - (W)

0

0 50 100 150

Mean on-state current I

Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz

350

T(AV)

- (A)

d.c.

300250200

300

180˚

250

120˚

90˚

200

150

30˚

60˚

100

50

On-state power loss per device - (W)

0

0 50 100 150

Mean on-state current I

Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz

T(AV)

- (A)

300250200

6/10

140

120

100

80

60

40

20

Maximum permissible case temperature - (˚C)

0

20 60 100 140 180 220 240

0 40 80 120

Mean on-state current I

120˚90˚60˚30˚

T(AV)

MP03XXX 175 Series

180˚

200160

- (A)

Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz

140

120

100

80

d.c.

60

40

20

30˚

Maximum permissible case temperature - (˚C)

0

20 60 100 140

40 80 120 160 200 240 260

Mean on-state current I

T(AV)

- (A)

180˚120˚90˚60˚

220180

280

Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz

7/10

MP03 XXX 175 Series

1400

1200

1000

0.02

0.04

R

th(hs-a)

˚C/W

R- Load

L- Load

800

600

0.08

0.10

0.12

Total power - (W)

400

0.15

0.20

0.30

200

Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for

(Note: R

values given above are true heatsink thermal resistances to ambient and already account for R

th(hs-a)

0.40

0

040800

20 60 100

Maximum ambient temperature - (˚C)

various values of heatsink thermal resistance.

D.C. output current - (A)

600400200

module contact thermal).

th(c-hs)

1400

1200

1000

800

600

Total power - (W)

400

0.08

0.10

0.12

0.15

0.20

R

˚C/W

th(hs-a)

0.020.04

R & L - Load

0.30

200

Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various

(Note: R

values given above are true heatsink thermal resistances to ambient and already account for R

th(hs-a)

0.40

0

040800

Maximum ambient temperature - (˚C)

values of heatsink thermal resistance.

D.C. output current - (A)

60040020020 60 100

module contact thermal).

th(c-hs)

8/10

MP03XXX 175 Series

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO
NOT SCALE.

50

38

52

18

32

1

Ø5.5

42.5

3x M8

35

28.5

5

K2
G2

5

6.5

5

G1

K1

80

2

3

2.8x0.8

Recommended fixings for mounting: M5 socket head cap screws.
Recommended mounting torque: 5Nm (44lb.ins)
Recommended torque for electrical connections: 8Nm (70lb.ins)
Maximum torque for electrical connections: 9Nm (80lb.ins)
Nominal weight: 950g

CIRCUIT CONFIGURATIONS

92

Module outline type code: MP03

G1K

1

1

1

G1K

1

HBT

1

HBP

K2 G

2

2

K2 G

2

2

2

3

3

3

HBN

9/10

MP03 XXX 175 Series

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e-mail: [email protected]

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DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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10/10

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© Dynex Semiconductor 2000 Publication No. DS5098-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM