Datasheet MP03-130-16, MP03-130-18, MP03-130-20 Datasheet (DYNEX)

MP03 XXX 130 Series

MP03 XXX 130 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS4480-3.0 DS4480-4.0 January 2000

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

Type

Number

MP03/130-20
MP03/130-18
MP03/130-16

Repetitive

Peak
Voltages
V

DRM VRRM

2000

1800

1600

Conditions

Tvj = 125oC
I

= I

DRM

RRM

V

& V

DSM

V

& V

DRM

respectively

= 30mA

=

RSM

+ 100V

RRM

Code

HBT

HBP

HBN

KEY PARAMETERS

V

DRM

I

TSM

I

(per arm) 134A

T(AV)

V

isol

CIRCUIT OPTIONS

Circuit

PACKAGE OUTLINE

2000V
4000A

2500V

Lower voltage grades available. For full description of
part number see "Ordering Instructions" on page 3.

CURRENT RATINGS - PER ARM

Symbol

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Parameter

Module type code: MP03.

See Package Details for futher information.

Conditions

Halfwave, resistive load

T

= 75oC

case

T

case

T

case

T

heatsink

T

heatsink

= 75oC
= 85oC

= 75oC
= 85oC

Max.

134
112
114

95

210

Units

A
A
A
A

A

1/10

MP03 XXX 130 Series

SURGE RATINGS - PER ARM

Symbol

I

TSM

I2t

Surge (non-repetitive) on-state current

I2t for fusing

Parameter

THERMAL & MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-hs)

vj

T

sto

Thermal resistance - junction to case
per Thyristor or Diode

Thermal resistance - case to heatsink
per Thyristor or Diode

Virtual junction temperatureT

Storage temperature range

Parameter

Conditions Max.

10ms half sine;
Tj = 125oC

10ms half sine;
Tj = 125oC

VR = 0
VR = 50% V
VR = 0

VR = 50% V

Conditions

dc
halfwave
3 phase

Mounting torque = 5Nm
with mounting compound

RRM

RRM

4000 A
3200

80000
51200

Max.

0.21

0.22

0.23

0.05

125

-40 to 125

Units

A

A2s

A2s

Units

o

C/W

o

C/W

o

C/W

o

C/W

o

C

o

C

isol

Isolation voltageV

Commoned terminals to base plate
AC RMS, 1min, 50Hz

2.5

DYNAMIC CHARACTERISTICS

Symbol

TM

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

On-state voltageV
Peak reverse and off-state current
Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage
On-state slope resistance

Parameter

At 450A, T
At V

RRM/VDRM

To 60% V

From 67% V

= 25oC - See Note 1

case

, Tj = 125oC

= 125oC

DRM Tj

to 400A Repetitive 50Hz

DRM

Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC

At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1

Max.Conditions

1.90
30

200*

100

1.25

1.33

Units

V/µs

A/µs

kV

V

mA

V

mΩ

2/10

GATE TRIGGER CHARACTERISTICS AND RATINGS

MP03 XXX 130 Series

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage V5.0­Peak forward gate current
Peak gate power
Mean gate power

Parameter

V

= 5V, T

DRM

V

= 5V, T

DRM

V

= 5V, T

DRM

Anode positive with respect to cathode
Anode negative with respect to cathode

Anode positive with respect to cathode

ORDERING INSTRUCTIONS

Part number is made up as follows:
MP03 HBT 130 - 18

MP = Pressure contact module
03 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
130 = Nominal average current rating at T
18 = V

RRM

/100

= 75oC

case

Conditions

= 25oC

case

= 25oC

case

= 25oC

case

Examples:
MP03 HBP130-16

MP03 HBN130-20
MP03 HBT130-16

Typ.

-

-

-

-

-

-

-

Max.

3.0

200

0.2
30

0.25

4

16

3

Units

V

mA

V
V

V

A­W
W

Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.

Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

MOUNTING RECOMMENDATIONS

Adequate heatsinking is required to maintain the base
temperature at 75oC if full rated current is to be achieved.
Power dissipation may be calculated by use of V
information in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if
required.

The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild
chemical etchant and then cleaned with a solvent to remove
oxide build up and foreign material. Care should be taken to
ensure no foreign particles remain.

T(TO)

and r

T

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.

After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.

3/10

MP03 XXX 130 Series

CURVES

1000

800

- (A)

T

600

Tj = 125˚C

400

Instantaneous on-state current I

200

0

0 1.0 2.0 3.0 4.0

Instantaneous on-state voltage V

Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1

- (V)

T

50

P

GM

= 16W

10

- (V)

G

Tj = 25˚C

Tj = -40˚C

Tj = 125˚C

Gate voltage V

1

4/10

0.1

0.01 0.1 1 10
Gate current I

Fig. 2 Gate trigger characteristics

- (A)

G

MP03 XXX 130 Series

0.3
R

th(j-hs)

R

th(j-c)

0.2

0.1

Thermal Impedance - (˚C/W)

0

0.001 0.010 0.100 1.0 10 100
Time - (s)

Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)

10

9
8
7
6
5
4

I2t

3
2

1
0

Peak half sine wave on-state current - (kA)

1

10 1 2 3 4 5 50

ms cycles at 50Hz

Duration

Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V

RRM

I

2

t value - A

60
50

2

s x 10

40
30

3

20
10

0

, T

= 125˚C (Thyristor or diode)

case

5/10

MP03 XXX 130 Series

400

350

300

250

200

120˚

90˚

180˚

60˚

150

30˚

100

On-state power loss per device - (W)

50

0

0 25 50 75 100 125

150

Mean on-state current - (A)

Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz

400

350

300

250

200

120˚

90˚

180˚

d.c.

60˚

150

30˚

100

On-state power loss per device - (W)

50

0

0 25 50 75 100 125

150

Mean on-state current - (A)

Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz

6/10

140

120

100

80

60

40

MP03 XXX 130 Series

20

0

Maximum permissible case temperature - (˚C)

0 25 50 75 100 125

90˚

60˚30˚

180˚120˚

150

Mean on-state current - (A)

Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz

140

120

100

80

60

40

20

60˚30˚

0

Maximum permissible case temperature - (˚C)

0 25 50 75 100 125

120˚90˚

180˚

d.c.

150

Mean on-state current - (A)

Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz

7/10

MP03 XXX 130 Series

600

0.040.080.10

0.02

R - Load

0.12

500

0.15

400

R

th(hs-a)

˚C/W

L - Load

0.20

300

0.30

200

0.40

Total power - (W)

100

0

Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for

(Note: R

values given above are true heatsink thermal resistances to ambient and already account for R

th(hs-a)

20

0 40 80 0 50 100

Maximum ambient temperature - (˚C)

various values of heatsink thermal resistance.

10060

D.C. output current - (A)

150

module contact thermal).

th(c-hs)

200

600

500

400

0.20

0.10

0.120.15

0.08

0.04

0.02
R

th(hs-a)

˚C/W

R & L- Load

300

200

0.30

0.40

Total power - (W)

100

0

Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various

(Note: R

values given above are true heatsink thermal resistances to ambient and already account for R

th(hs-a)

20

0 40 80 0 50 100

Maximum ambient temperature - (˚C)

10060

D.C. output current - (A)

values of heatsink thermal resistance.

150

module contact thermal).

th(c-hs)

200

8/10

MP03 XXX 130 Series

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

50

38

52

18

32

1

Ø5.5

42.5

3x M8

35

28.5

5

K2

G2

5

6.5

5

G1

K1

80

2

3

2.8x0.8

Recommended fixings for mounting: M5 socket head cap screws.
Recommended mounting torque: 5Nm (44lb.ins)
Recommended torque for electrical connections: 8Nm (70lb.ins)
Maximum torque for electrical connections: 9Nm (80lb.ins)
Nominal weight: 950g

CIRCUIT CONFIGURATIONS

92

Module outline type code: MP03

G1K

1

G1K

1

1

1

HBT

1

HBP

K2 G

2

2

K2 G

2

2

2

3

3

3

HBN

9/10

MP03 XXX 130 Series

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Thyristor and diode measurement with a multi-meter AN4853
Use of V

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

, rT on-state characteristic AN5001

TO

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4480-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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