Datasheet MP02TT800-16, MP02TT800-12, MP02TT800-13, MP02TT800-14, MP02TT800-15 Datasheet (DYNEX)

MP02TT800

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FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Welding

VOLTAGE RATINGS

ORDERING INFORMATION

Order As:

MP02TT800-XX W12 1/4 - 18NPT
MP02TT800-XX W13 1/4 BSP connection

XX shown in the part number about represents V

DRM

/100

selection required, e.g. MP02TT800-14-W12
Note: When ordering, please use the whole part number.
Auxiliary gate and cathode leads can be ordered separately.

KEY PARAMETERS

V

DRM

1600V

I

LINE(cont.)

510A

I

LINE(20cy./50%)

805A

I

TSM(per arm)

6800A

V

isol

3000V

MP02TT800

Dual Thyristor Water Cooled Welding Module

Preliminary Information

DS5435-1.1 June 2001

Fig. 1 Circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: MP02 W12/W13

(See package details for further information)

1600
1500
1400
1300

MP02TT800-16
MP02TT800-15
MP02TT800-14
MP02TT800-13

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 30mA

V

DSM

= V

RSM

=

V

DRM

= V

RRM

+ 100V

respectively

Lower voltage grades available

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

G1K1K2G

2

1

23

K1 G1

K2

G2

1

23

MP02TT800

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Parameter

Max. controllable RMS line

current - single phase

Surge (non-repetitive) on-current

I

2

t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Isolation voltage

Test Conditions

Continuous 50/60Hz T

water (in)

= 25˚C

4.5 Ltr/min T

water (in)

= 40˚C

20 cycles, 50% duty cycle T

water (in)

= 25˚C

4.5 Ltr/min T

water (in)

= 40˚C

10ms half sine, T

j

= 125˚C

V

R

= 0

10ms half sine, T

j

= 125˚C

V

R

= 50% V

DRM

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

Symbol

I

LINE

I

TSM

I2t

I

TSM

I2t

V

isol

Units

A

A

A

A

kA

A

2

s

kA

A

2

s

V

Max.

510

450

920

805

6.8

0.231 x 10

6

5.5

0.15 x 10

6

3000

Test Conditions

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

Reverse (blocking)

-

Mounting - M6

Electrical connections - M6

-

Parameter

Thermal resistance - junction to water

(per thyristor)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

THERMAL AND MECHANICAL RATINGS

ABSOLUTE MAXIMUM CURRENT RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

R

th(j-c)

T

vj

T

stg

-

-

Units

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

Nm (lb.ins)

Nm (lb.ins)

g

Max.

0.3

0.32

0.33

125

125

-

5 (44)

1200

Min.

-

-

-

-

–40

5 (44)

-

-

MP02TT800

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Units

mA

V/µs

A/µs

V

mΩ

Test Conditions

At V

RRM/VDRM

, Tj = 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

to 200A, gate source 10V, 5Ω

t

r

= 0.5µs, Tj = 125˚C

At T

vj

= 125˚C

At T

vj

= 125˚C

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

DYNAMIC CHARACTERISTICS

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Max.

30

1000

500

0.98

0.75

Min.

-

-

-

-

-

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3

150

0.25

30

0.25

5

10

100

5

Units

V

mA

V

V

V

V

A

W

W

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

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Fig. 3 Maximum (limit) on-state characteristics

1

10 1 2 3 45 50

0

5

10

15

Duration

60

100

140

Peak half sine wave on-state current - (kA)

ms cycles at 50Hz

I

2

t value - A

2

s x 10

3

180

I2t

20

10 20 30

Fig. 6 Transient thermal impedance - dc

Fig. 4 Surge (non-repetitive) on-state current vs time

(with 50% V

RSM

at T

case

= 125˚C)

Fig. 5 Gate characteristics

0.5 1.0 2.0
Instantaneous on-state voltage, V

T

- (V)

0

500

1000

1500

2000

Instantaneous on-state current, I

T

- (A)

Measured under pulse conditions

T

j

= 125˚C

1.5

2.5

100

10

1.0

0.1

0.001 0.01 0.1 1.0 10
Gate trigger current, I

GT

- (A)

Gate trigger voltage, V

GT

- (V)

Tj = 125˚C

Tj = 25˚C

T

j

= -40˚C

Upper limit 99%

Lower limit 1%

V

FGM

V

GD

I

FGM

5W

10W

50W

75W

100W

Pulse
Width

µs
20

25
100
500

1ms

10ms

50

100
100
100
100
100

10

100
100

100
100
100

50

-

400
100

100
100

25

-

-

Pulse Frequency

Hz

Table gives pulse power PGM in watts

1010.1 1000

100

0.010.001
Time - (s)

1.0

0.1

0.01

0.001

Thermal resistance (junction to water). R

th(j-w)

- (ßC/W)

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Fig. 7 Single phase welding rating @T

water

= 25˚C

Fig. 10 Single phase welding rating @T

water

= 50˚C

Fig. 8 Single phase welding rating @T

water

= 30˚C

Fig. 9 Single phase welding rating @T

water

= 40˚C

1

500

1500

1000

2000

2500

3000

110100

Duty cycles - (%)

RMS current, I

T(RMS)

- (A)

T

water

= 25˚C

Number of cycles

1
3

5
10
20
30
50

100

1

500

1500

1000

2000

2500

3000

110100

Duty cycles - (%)

RMS current, I

T(RMS)

- (A)

T

water

= 30˚C

Number of cycles

1
3

5
10
20
30
50

100

1

500

1500

1000

2000

2500

3000

110100

Duty cycles - (%)

RMS current, I

T(RMS)

- (A)

T

water

= 40˚C

Number of cycles

1
3

5
10
20
30
50

100

1

500

1500

1000

2000

2500

3000

110100

Duty cycles - (%)

RMS current, I

T(RMS)

- (A)

T

water

= 50˚C

Number of cycles

1
3

5
10
20
30
50

100

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PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Recommended fixings for mounting: M6 socket head cap screws.

Auxiliary gate and cathode leads can be ordered separately.

Nominal weight: 1200g

Module outline type code: MP02-W12

80

13

24534

23

15

23 24

12.8

Ø6.5

K1 G1

K2

G2

M6

2.8 X 0.8

49

94

21.6

1

23

10.5

50.8

2 Off water connectors
1/4 - 18 NTP (W12)

Water-way plug

23.8

9.5

2 Off Holes M3 x 0.5
10 deep

MP02TT800

7/8

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PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Recommended fixings for mounting: M6 socket head cap screws.

Auxiliary gate and cathode leads can be ordered separately.

Nominal weight: 1200g

Module outline type code: MP02-W13

80

13

24534

23

15

23 24

12.8

fl6.5

K1 G1

K2

G2

M6

2.8 X 0.8

49

94

21.6

1

23

10.5

50.8

2 Off water connectors
1/4 BSP (W13)

Water-way plug

23.8

9.5

2 Off Holes M3 x 0.5
10 deep

MP02TT800

8/8

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POWER ASSEMBLY CAPABILITY

The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.

An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5435-1 Issue No. 1.2 June 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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e-mail: [e-mail]

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.