Datasheet MP02-190-12, MP02-190-14, MP02-190-10 Datasheet (DYNEX)

MP02 XXX 190 Series

1/10

Symbol

Parameter

Max.

Units

160

A
A

Conditions

A

T

case

= 75oC

T

heatsink

= 75oC

T

heatsink

= 85oC

T

case

= 85oC

T

case

= 75oC

I

T(RMS)

RMS value

A

300

Mean on-state current Halfwave, resistive load

I

T(AV)

Code

Circuit

HBT

HBP

HBN

Repetitive

Peak
Voltages
V

DRM VRRM

Type

Number

1400

1200

1000

Lower voltage grades available. For full description of
part number see "Ordering Instructions" on page 3.

123

Module type code: MP02.

See Package Details for further information

MP02/190-14
MP02/190-12
MP02/190/10

Tvj = 125oC
I

DRM

= I

RRM

= 30mA

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

150

190

125

A

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

CURRENT RATINGS - PER ARM

PACKAGE OUTLINE

CIRCUIT OPTIONS

KEY PARAMETERS

V

DRM

1400V

I

TSM

6800A

I

T(AV)

(per arm) 190A

V

isol

2500V

Conditions

MP02 XXX 190 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS4479-3.0 DS4479-4.0 January 2000

MP02 XXX 190 Series

2/10

Symbol

Parameter

Conditions Max.

Units

VR = 0
VR = 50% V

RRM

VR = 0
VR = 50% V

RRM

A2s

I2t for fusing

Surge (non-repetitive) on-state current

I

TSM

I2t

6800 A

A

5500

231000
150000

A2s

Symbol

Parameter

Linear rate of rise of off-state voltage

V

mA

V/µs

On-state voltageV

TM

I

RRM/IDRM

Peak reverse and off-state current

To 60% V

DRM Tj

= 125oC

At V

RRM/VDRM

, Tj = 125oC

At 1000A, T

case

= 25oC - See Note 1

Symbol

Parameter

Conditions

o

C/W

Units

o

C/W

o

C/W

R

th(c-hs)

R

th(j-c)

Virtual junction temperatureT

vj

o

C

o

C

T

sto

Storage temperature range

Mounting torque = 6Nm
with mounting compound

3 phase

halfwave

dc

Commoned terminals to base plate
AC RMS, 1min, 50Hz

Max.

Rate of rise of on-state current

V

T(TO)

Threshold voltage

V

From 67% V

DRM

to 400A Repetitive 50Hz
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC

mΩ

At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1

r

T

On-state slope resistance

* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

dI/dt

dV/dt

Thermal resistance - case to heatsink
per Thyristor or Diode

o

C/W

Isolation voltageV

isol

kV

Thermal resistance - junction to case
per Thyristor or Diode

-40 to 125

0.17

0.18

0.19

0.07

125

2.5

1.75
30

200*

A/µs100

1.05

0.80

Units

Max.Conditions

10ms half sine;
Tj = 125oC

10ms half sine;
Tj = 125oC

SURGE RATINGS - PER ARM

THERMAL & MECHANICAL RATINGS

DYNAMIC CHARACTERISTICS

MP02 XXX 190 Series

3/10

Symbol

Parameter

Conditions

Gate non-trigger voltage

V

Units

Max.

3.0

0.2

Typ.

mA

VV

GD

Gate trigger voltage

200

V

GT

I

GT

Gate trigger current

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC, RL = 6Ω

V

DRM

= 5V, T

case

= 25oC, RL = 6Ω

-

-

-

V

RGM

Peak reverse gate voltage

V5.0­A

-4

I

FGM

Peak forward gate current

Anode positive with respect to cathode

P

GM

P

G(AV)

Peak gate power
Mean gate power

-

-

16

3

W
W

Part number is made up as follows:
MP02 HBT 190 - 16

MP = Pressure contact module
02 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
175 = Nominal average current rating at T

case

= 75oC

16 = V

RRM

/100

Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.

Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

Examples:
MP02 HBP190-14

MP02 HBN190-12

Adequate heatsinking is required to maintain the base
temperature at 75oC if full rated current is to be achieved.
Power dissipation may be calculated by use of V

T(TO)

and r

T

information in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if
required.

The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild
chemical etchant and then cleaned with a solvent to remove
oxide build up and foreign material. Care should be taken to
ensure no foreign particles remain.

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.

After application of thermal compound, place the module
squarely over the mounting holes, (or 'T' slots) in the heatsink.
Using a torque wrench, slowly tighten the recommended fixing
bolts at each end, rotating each in turn no more than 1/4 of a
revolution at a time. Continue until the required torque of 6Nm
(55lb.ins) is reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.

GATE TRIGGER CHARACTERISTICS AND RATINGS

ORDERING INSTRUCTIONS

MOUNTING RECOMMENDATIONS

MP02 XXX 190 Series

4/10

100

10

1.0

0.1

0.001 0.01 0.1 1.0 10
Gate trigger current I

GT

- (A)

Gate trigger voltage V

GT

- (V)

Tj = 125˚C

Tj = 25˚C

T

j

= -40˚C

Upper limit 99%

Lower limit 1%

V

FGM

V

GD

I

FGM

5W

10W

50W

75W

100W

Pulse

Width

µs
20

25
100
500
1ms

10ms

50

100
100
100
100
100

10

100
100

100
100
100

50

-

400
100

100
100

25

-

-

Pulse Frequency Hz

Table gives pulse power P

GM

in watts

0 1.0 2.0 3.0 4.0

Instantaneous on-state voltage VT - (V)

2500

2000

1500

1000

500

0

Instantaneous on-state current I

T

- (A)

Tj = 125˚C

CURVES

Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1

Fig. 2 Gate trigger characteristics

MP02 XXX 190 Series

5/10

1

10 1 2 3 45 50

0

5

10

15

Duration

60

100

140

Peak half sine wave on-state current - (kA)

ms cycles at 50Hz

I

2

t value - A

2

s x 10

3

180

I2t

20

10 20 30

0.001 0.010 0.100 1.0 10 100
Time - (s)

0

0.1

0.2

0.3

Thermal Impedance - (˚C/W)

R

th(j-hs)

R

th(j-c)

Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)

Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V

RRM

, T

case

= 125˚C (Thyristor or diode)

MP02 XXX 190 Series

6/10

0 50 100 150 200 250

Mean on-state current I

T(AV)

- (A)

300

250

200

150

100

50

0

On-state power loss per device - (W)

180˚

120˚

90˚

60˚

30˚

0 50 100 150 200 250

300

Mean on-state current I

T(AV)

- (A)

400

350

300

250

200

150

100

50

0

On-state power loss per device - (W)

180˚

120˚

90˚

60˚

30˚

d.c.

Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz

Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz

MP02 XXX 190 Series

7/10

0 50 100 150 200 250

Mean on-state curren I

T(AV)

- (A)

120

100

80

60

40

20

0

Maximum permissible case temperature - (˚C)

180˚120˚90˚60˚

30˚

140

0 50 100 150 200 250

300

Mean on-state current I

T(AV)

- (A)

120

100

80

60

40

20

0

Maximum permissible case temperature - (˚C)

180˚

120˚90˚60˚30˚

140

d.c.

Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz

Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz

MP02 XXX 190 Series

8/10

0 40 80 120 0 200

400

1200

1000

800

600

400

200

0

Total power - (W)

10060

20

Maximum ambient temperature - (˚C)

D.C. output current - (A)

R

th(hs-a)

˚C/W

0.02

0.04

0.08

0.10

0.12

0.15

0.20

0.40

0.30

140

R - Load

L - Load

0 40 80 120 0 200

400

1200

1000

800

600

400

200

0

Total power - (W)

10060

20

Maximum ambient temperature - (˚C)

D.C. output current - (A)

R & L- Load

R

th(hs-a)

˚C/W

0.02

0.04

0.08

0.10

0.12

0.15

0.20

0.30

0.40

140

Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for

various values of heatsink thermal resistance.

(Note: R

th(hs-a)

values given above are true heatsink thermal resistances to ambient and already account for R

th(c-hs)

module contact thermal).

Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various

values of heatsink thermal resistance.

(Note: R

th(hs-a)

values given above are true heatsink thermal resistances to ambient and already account for R

th(c-hs)

module contact thermal).

MP02 XXX 190 Series

9/10

23 23 24

13
80

34

30

94

3x M6

12.8

2 holes Ø6.5

123

24

5

15

K

2

G

2

K

1

G

1

Nominal weight: 350g

Recommended fixings for mounting: M6 socket head cap screws

Recommended mounting torque: 6Nm (55lb.ins)

Recommended torque for electrical connections: 5Nm (44lb.ins)

Maximum torque for electrical connections: 8Nm (70lb.ins)

Module outline type code: MP02

HBT

G1K

1

1

2

HBP

1

2

HBN

K2 G

2

1

2

3

3

3

G1K

1

K2 G

2

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

CIRCUIT CONFIGURATIONS

MP02 XXX 190 Series

10/10

CUSTOMER SERVICE CENTRES

France, Benelux, Italy and Spain Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Germany, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

France, Benelux, Italy and Spain Tel: [phone]. Fax: [phone]
Germany Tel: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone] / Tel: [phone]. Fax: [phone].
UK, Germany, Scandinavia & Rest Of W orld Tel: [phone]. Fax: [phone]
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4479-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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http://www.dynexsemi.com

e-mail: [email protected]

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of VTO, rT on-state characteristic AN5001

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.