Datasheet MOS 4073 Datasheet (FREI)

Page 1
HCF4073B
TRIPLE 3 INPUT AND GATE
■ MEDIUM SPEED OPERATION :
t
= 60ns (TYP.) at VDD = 10V
PD
■ QUIESCENT CURRENT SPECIFIED UP TO
■ 5V, 10V AND 15V PARAMETRIC RAT INGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIF ICATIONS FOR DESCRIPTI ON OF B SERI ES CMOS DEVICES"
DESCRIPTION
The HCF4073B is a m onolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4073B TRIPLE 3 INPUT AND GATE provides the system designer with direct
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4073BEY
SOP HCF4073BM1 HCF4073M013TR
implementation of the AND function and supplement the existing family of CMOS gates.
PIN CONNECTION
1/7September 2001
Page 2
HCF4073B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
13, 8, 5 G, C, F Data Inputs 12, 2, 4 H, B, E Data Inputs 11, 1, 3 I, A, D Data Inputs 10, 9, 6 L, J, K Data Outputs
7
14
TRUTH TABLE
G, C, F H, B, E I, A, D L, J , K
LXXL XLXL XXLL
HHHH
X : Don’t Care
ABSOLUTE MAXIMUM RATINGS
V
SS
V
DD
INPUTS OUTPUTS
Negative Supply Voltage Positive Supply Voltage
Symbol Parameter Value Unit
V
V
P
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
V
Power Dissipation per Output Transistor 100 mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values ar e referred t o V
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
2/7
Page 3
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.01 0.25 7.5 7.5
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.01 0.5 15 15 0/15 15 0.01 1 30 30 0/20 20 0.02 5 150 150
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
High Level Input
V
IH
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
V
IL
Low Level Input Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
I
OH
Output Drive Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36 0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9 0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
C
Input Capacitance
I
The Noi se Margin for both "1" and "0 " le vel is: 1V min. wi th VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 5 7.5 pF
±10
-5
-40 to 85°C -55 to 125°C
±0.1 ±1 ±1 µA
HCF4073B
Unit
µA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PLH tPHL
t
TLH tTHL
(*) Typical temperat ure coeffici ent for all VDD value is 0.3 %/°C.
Propagation Delay Time 5 125 250
Output Transition Time 5 100 200
(V)
V
DD
15 45 90
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 60 125
ns10 60 100
3/7
Page 4
HCF4073B
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and p robe capacit ance) R
= 200KΩ
L
R
= Z
of pulse generator (typically 50Ω)
T
OUT
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
4/7
Page 5
HCF4073B
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335 e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100
P001A
5/7
Page 6
HCF4073B
SO-14 MECHANICAL DATA
DIM.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
6/7
PO13G
Page 7
HCF4073B
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by imp lication or otherwise under a ny patent or patent rig hts of STMicroelectronics. Specificat ions mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
Australi a - Brazil - Chin a - Finland - France - Germany - Hong Kon g - India - Italy - Japan - Malay si a - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Pri n ted in Italy - A ll Ri g h ts Reserved
STMicr o el ectronics GROUP OF COMPANI ES
Singapo re - Spain - Sweden - Switzerland - Uni ted Kingdom
© http://www.st.com
7/7
Loading...