Datasheet MOC211-M, MOC212-M, MOC213-M Datasheet (Fairchild)

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

April 2009

MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output

Features

UL recognized (File #E90700, Volume 2)

■

VDE recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211VM)

Convenient plastic SOIC-8 surface mountable

■

package style

■

Standard SOIC-8 footprint, with 0.050" lead spacing Compatible with dual wave, vapor phase and

■

IR reflow soldering High input-output isolation of 2500 V

■

AC(rms)

guaranteed

■

Minimum BV

of 30V guaranteed

CEO

Applications

■

General purpose switching circuits Interfacing and coupling systems of different

■

potentials and impedances Regulation feedback circuits

■

Monitor and detection circuits

Schematic

Description

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughthe-board mounting.

1

N/C

2

3

4

CATHODE

N/CANODE

8

7

BASE

COLLECTORN/C

6

EMITTER

5

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

Absolute Maximum Ratings

(T

= 25°C Unless otherwise speciﬁed)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Rating Value Unit

EMITTER

I

F

I

(pk) Forward Current – Peak (PW = 100µs, 120pps) 1.0 A

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

V

CBO

I

C

P

D

TOTAL DEVICE

V

ISO

P

D

T

A

T

stg

T

L

Forward Current – Continuous 60 mA

Reverse Voltage 6.0 V

LED Power Dissipation @ T Derate above 25°C

= 25°C

A

90

0.8

mW

mW/°C

Collector-Emitter Voltage 30 V

Emitter-Collector Voltage 7.0 V

Collector-Base Voltage 70 V

Collector Current-Continuous 150 mA

Detector Power Dissipation @ T Derate above 25°C

Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)

Total Device Power Dissipation @ T Derate above 25°C

= 25°C

A

= 25°C

(1)(2)(3)

150

1.76

mW

mW/°C

2500 Vac(rms)

250

2.94

mW

mW/°C

Ambient Operating Temperature Range -40 to +100 °C

Storage Temperature Range -40 to +150 °C

Lead Soldering Temperature

260 °C

(1/16 " from case, 10 sec. duration)

Notes:

1. Isolation Surge Voltage, V

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.

3. V

rating of 2500 V

ISO

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

for t = 1 sec.

Ω

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

Electrical Characteristics

(T

= 25°C unless otherwise speciﬁed)

A

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

V

Input Forward Voltage I

F

Reverse Leakage Current V

I

R

Input Capacitance 18 pF

C

IN

DETECTOR

I

CEO1

I

CEO2

BV

Collector-Emitter Dark Current V

Collector-Emitter Breakdown

CEO

Voltage

BV

Emitter-Collector Breakdown

ECO

Voltage

C

Collector-Emitter Capacitance f = 1.0MHz, V

CE

COUPLED

CTR Collector-Output Current

MOC211M MOC212M

MOC213M V R

V

CE (sat)

C

Isolation Surge Voltage

ISO

Isolation Resistance

ISO

Collector-Emitter Saturation Voltage I

Isolation Capacitance

ISO

Tu r n-On Time I

t

on

Tu r n-Off Time I

t

off

Rise Time I

t

r

Fall Time I

t

f

(2)

(4)

(1)(2)(3)

= 10mA 1.15 1.5 V

F

= 6.0V 0.001 100 µA

R

= 10V, T

CE

= 10V, T

V

CE

I

= 100µA 30 100 V

C

I

= 100µA 7.0 10 V

E

= 10mA, V

I

F

= 25°C

A

= 100°C

A

= 0 7.0 pF

CE

= 10V

CE

1.0

50 nA

µA

20 50

100 f = 60 Hz AC Peak, t = 1 min. 2500 Vac(rms) V = 500V 10

= 2.0mA, I

C

= 10mA 0.4 V

F

11

V = 0V, f = 1MHz 0.2 pF

= 2.0mA, V

C

= 10V, R

CC

= 100 Ω

L

7.5 µs

(Fig. 10)

= 2.0mA, V

C

= 10V, R

CC

= 100 Ω

L

5.7 µs

(Fig. 10)

= 2.0mA, V

C

= 10V, R

CC

= 100 Ω

L

3.2 µs

(Fig. 10)

= 2.0mA, V

C

= 10V, R

CC

= 100 Ω

L

4.7 µs

(Fig. 10)

%

*Typical values at T

= 25°C

A

Notes:

1. Isolation Surge Voltage, V

, is an internal device dielectric breakdown rating.

ISO

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. rating of 2500 V

3. V

ISO

4. Current Transfer Ratio (CTR) = I

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

/I

x 100%.

C

F

AC(rms)

for t = 1 sec.

Typical Performance Curves

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

1.2

– FORWARD VOLTAGE (V)

F

V

1.1

1.0 110100

TA = –55°C

TA = 25°C

TA = 100°C

IF – LED FORWARD CURRENT (mA)

Fig. 3 Output Current vs. Ambient Temperature

10

1

10

VCE = 5V NOR MALIZE D TO I

1

0.1

– OUTPUT COLLECT OR CURRENT (NORMALIZED)

C

I

0.01

0.1 1 1 0 100

= 10 mA

F

IF – LED INPUT CURRENT (mA)

Fig. 4 Output Current vs. Collector-Emitter Voltage

1.6

1.4

1.2

1.0

0.8

Fig. 2 Output Curent vs. Input Current

– OUTPUT COLLECT OR CUR RENT (N ORM ALIZE D)

C

I

NORMALIZED TO TA = 25°C

0.1

-80 -60 -40 -20 0 2 0 40 60 80 100 120

TA – AMBIENT TEMPERATURE (°C)

Fig. 5 Dark Current vs. Ambient Temperature

1000 0

V

= 10V

CE

1000

100

10

1

– COLLECTOR -E MIT TER DA RK CU RRE NT (nA )

CEO

I

0.1 020406080100

TA – AMBIENT TEMPERATURE (°C)

0.6

0.4

0.2

– OUTPUT COLLECTOR CURRENT (NORMALIZED)

C

0.0

I

012345678910

IF = 10 mA NORM ALIZE D TO V

VCE – COLLECTOR-EMITTER VOLTAGE (V)

Fig. 6 CTR vs. RBE (Unsaturated)

1.0

0.9

IFmA

= 20

0.8

0.7

0.6

0.5

0.4

NORMALIZED CTR

0.3

0.2

0.1

0.0

10 100 1000

V Normalized to:

CTR at R

RBE – BASE RESISTANCE (kΩ)

CE

= 5V, T

=

I

F

I

= 5mA

F

A

= Open

BE

10mA

=

25°C

= 5V

CE

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

Typical Performance Curves

1.0

0.9

0.8

0.7

0.6

0.5

0.4

NORMALIZED CTR

0.3

0.2

0.1

0.0 10 100 1000

Fig. 7 CTR vs. RBE (Saturated)

= 20mA

I

F

RBE –

BASE RESISTANCE (kΩ)

I

= 10mA

F

I

= 5mA

F

V

= 0.3V, TA = 25°C

CE

Normalized to: CTR at R

BE

1.6

1.4

1.2

offf

1.0

= Open

(Continued)

Fig. 9 Normalized t

V

= 10V

CC

I

= 2mA

C

= 100

Ω

R

L

NORMALIZED TO :

AT RBE = OPEN

t

offf

Fig. 8 Normalized ton vs. R

4.0 V

= 10V

CC

= 2mA

I

C

3.5

= 100Ω

R

L

NORMALIZED TO :

3.0

t

AT RBE = OPEN

on

2.5

2.0

ALIZED t

1.5

NORM

1.0

0.5

0.0

0.01 0.1 1 10 100

R

–

BASE RESISTANCE (MΩ )

BE

vs. R

off

BE

INPUT

TEST CIRCUIT

I

F

R

BE

0.8

0.6

NORMALIZED t

0.4

0.2

0.0

0.01 0.1 1 10 100

(M

Ω

RBE – BASE RESISTANCE

)

WAVEFORMS

= 10V

V

CC

INPUT PULSE

I

C

R

L

OUTPUT

I

Adjust

F to produce IC = 2mA

10%

90%

OUTPUT PULSE

t

r

t

on

t

f

t

off

Figure 10. Switching Time Test Circuit and Waveforms

Package Dimensions

8-pin SOIC Surface Mount

8

1

0.202 (5.13)

0.182 (4.63)

0.164 (4.16)

0.144 (3.66)

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

0.143 (3.63)

0.123 (3.13)

SEATING PLANE

0.021 (0.53)

0.011 (0.28)

Lead Coplanarity: 0.004 (0.10) MAX

Recommended Pad Layout

0.050 (1.27) Typ.

0.275 (6.99)

0.155 (3.94)

0.008 (0.20)

0.003 (0.08)

0.024 (0.61)

0.010 (0.25)

0.006 (0.16)

0.244 (6.19)

0.224 (5.69)

0.060 (1.52)

0.050 (1.27)

Dimensions in inches (mm).

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions, speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www

.fairchildsemi.com/packaging/

Ordering Information

Option Order Entry Identiﬁer Description

VVVDE 0884

R2 R2 Tape and reel (2500 units per reel)

R2V R2V VDE 0884, Tape and reel (2500 units per reel)

Marking Information

1

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

211

SYYXV

43

5

2

6

Deﬁnitions

1Fairchild logo

2Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One digit year code, e.g., ‘8’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

Carrier Tape Specifications

8.0 ± 0.10

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

3.50 ± 0.20

0.30 MAX

8.3 ± 0.10

0.1 MAX

Dimensions in mm

4.0 ± 0.10

User Direction of Feed

2.0 ± 0.05

6.40 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

5.5 ± 0.05

12.0 ± 0.3

5.20 ± 0.20

Ø1.5 ± 0.1

Reﬂow Proﬁle

MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

Max. Ramp-up Rate = 3°C/S

Max. Ramp-down Rate = 6°C/S

Ts ma x

Preheat Area

Ts mi n

t

L

t

s

260 240 220 200 180 160 140 120

T

P

T

L

100

80 60

Temperature (°C)

40 20

0

120

240 360

Time 25°C to Peak

Time (seconds)

Proﬁle Freature Pb-Free Assembly Proﬁle

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (t

Ramp-up Rate (t

Liquidous Temperature (T

Time (t

Peak Body Package Temperature 260°C +0°C / –5°C

Time (t

Ramp-down Rate (T

Time 25°C to Peak Temperature 8 minutes max.

) from (Tsmin to Tsmax) 60–120 seconds

S

to t

) 3°C/second max.

L

P

) 217°C

L

) Maintained Above (TL) 60–150 seconds

L

) within 5°C of 260°C 30 seconds

P

to TL) 6°C/second max.

P

t

P

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MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output

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Rev. I40