Datasheet MMUN2213LT1, MMUN2213LT3, MMUN2212LT1, MMUN2234LT1, MMUN2235LT1 Datasheet (MOTOROLA)

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Page 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SOT-23 package can be soldered using wave or

reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel. Use the

Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel.

MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Collector-Base Voltage V

CBO

50 Vdc

Collector-Emitter Voltage V

CEO

50 Vdc

Collector Current I

100 mAdc

Total Power Dissipation @ TA = 25°C

(1)

Derate above 25°C

*200

1.6

mW/°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction-to-Ambient (surface mounted) R

θJA

625 °C/W

Operating and Storage Temperature Range TJ, T

stg

–65 to +150 °C

Maximum Temperature for Soldering Purposes, Time in Solder Bath

260

°C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K)

MMUN221 1LT1 MMUN2212LT1 MMUN2213LT1

A8A A8B A8C

10 22 47

MMUN2214LT1

MMUN2215LT1

(2)

MMUN2216LT1

(2)

MMUN2230LT1

(2)

A8D

A8E A8F A8G

4.7 1

∞ ∞

MMUN2231LT1

(2)

MMUN2232LT1

(2)

MMUN2233LT1

(2)

MMUN2234LT1

(2)

A8H

A8J A8K A8L

2.2

4.7

2.2

4.7 47 47

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2211T1/D)

Order this document

by MMUN2211LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1996

NPN SILICON

BIAS RESISTOR

TRANSISTOR

Motorola Preferred Devices

CASE 318-08, STYLE 6

SOT-23 (TO-236AB)

MMUN2211LT1

SERIES

PIN 3 COLLECTOR (OUTPUT)

PIN 2 EMITTER (GROUND)

PIN 1 BASE (INPUT)

Page 2

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I

CBO

— — 100 nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I

CEO

— — 500 nAdc

Emitter-Base Cutoff Current MMUN221 1LT1

(VEB = 6.0 V, IC = 0) MMUN2212LT1

MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

EBO

— — — — — — — — — — —

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V

(BR)CBO

50 — — Vdc

Collector-Emitter Breakdown Voltage

(3)

(IC = 2.0 mA, IB = 0) V

(BR)CEO

50 — — Vdc

ON CHARACTERISTICS

(3)

DC Current Gain MMUN221 1LT1

(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1

MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

35 60 80

80 160 160

3.0

8.0 15 80 80

60 100 140 140 350 350

5.0 15 30

200 150

— — — — — — — — — — —

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1

CE(sat)

— — 0.25 Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1

MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) MMUN2213LT1

— — — — — — — — — — —

0.2

Vdc

Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)

(VCC = 5.0 V, VB = 0.050 V , RL = 1.0 k Ω) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1

MMUN2216LT1 MMUN2233LT1

4.9 — — Vdc

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

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MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

(3)

Input Resistor MMUN221 1LT1

MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1

R1 7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

10 22 47 10 10

4.7

1.0

2.2

4.7

4.7 22

28.6

61.1 13 13

6.1

1.3

2.9

6.1

28.6

k Ω

Resistor Ratio MMUN221 1LT1/MMUN2212LT1/MMUN2213LT1

MMUN2214L T1 MMUN2215L T1/MMUN2216LT1 MMUN2230L T1/MMUN2231LT1/MMUN2232LT1 MMUN2233L T1 MMUN2234L T1

R1/R2 0.8

0.17 —

0.8

0.055

0.38

1.0

0.21 —

1.0

0.1

0.47

1.2

0.25 —

1.2

0.185

0.56

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Page 4

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2211LT1

1002030

IC, COLLECTOR CURRENT (mA)

0.1

, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C

25°C

0.1

0.01

0.001 020 406080

IC, COLLECTOR CURRENT (mA)

CE(sat)

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

1000

100

1 10 100

IC, COLLECTOR CURRENT (mA)

, DC CURRENT GAIN (NORMALIZED)

TA=75°C

25°C

–25°C

TA= –25°C

25°C

IC/IB = 10

75°C

25°C

TA= –25°C

100

0.1

0.01

0.001 01234

Vin, INPUT VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA)

5678910

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

, CAPACITANCE (pF)

75°C

f = 1 MHz lE = 0 V TA = 25°C

VO = 5 V

VCE = 10 V

VO = 0.2 V

Figure 1. Derating Curve

250

200

150

100

–50 0 50 100 150

TA, AMBIENT TEMPERATURE (°C)

, POWER DISSIPATION (MILLIWATTS)

θJA

= 625°C/W

Figure 2. V

CE(sat)

versus I

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. V

CE(sat)

versus I

Figure 6. V

CE(sat)

versus I

Page 5

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2212L T1

Figure 7. V

CE(sat)

versus I

Figure 8. DC Current Gain

Figure 9. Output Capacitance Figure 10. Output Current versus Input V oltage

1000

IC, COLLECTOR CURRENT (mA)

, DC CURRENT GAIN (NORMALIZED)

100

1 100

75°C 25°C

100

Vin, INPUT VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA)

0.1

0.01

0.001 246810

TA= –25°C

IC, COLLECTOR CURRENT (mA)

100

, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C

0.1 10 20 30 40 50

Figure 11. Input Voltage versus Output Current

0.001

CE(sat)

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

TA= –25°C

75°C

25°C

0.01

0.1

IC, COLLECTOR CURRENT (mA)

020 6080

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

, CAPACITANCE (pF)

f = 1 MHz lE = 0 V TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

25°C

TA=75°C

–25°C

VCE = 10 V

25°C

–

Page 6

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2213L T1

Figure 12. V

CE(sat)

versus I

0246810

100

0.1

0.01

0.001

, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C

25°C

Figure 13. DC Current Gain

Figure 14. Output Capacitance

100

0.1 010 203040 50

, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 15. Output Current versus Input Voltage

1000

IC, COLLECTOR CURRENT (mA)

, DC CURRENT GAIN (NORMALIZED)

TA=75°C

25°C –25°C

100

1 100

Figure 16. Input Voltage versus Output Current

0 204060 80

0.1

0.01 IC, COLLECTOR CURRENT (mA)

TA= –25°C

25°C

75°C

CE(sat)

IMUM

COLLECTOR

VOLTAGE

(VOLTS)

TA= –25°C

25°C

75°C

010203040

0.8

0.6

0.4

0.2

VR, REVERSE BIAS VOLTAGE (VOLTS)

, CAPACITANCE (pF)

f = 1 MHz lE = 0 V TA = 25°C

VO = 5 V

VCE = 10 V

IC/IB = 10

VO = 0.2 V

Page 7

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2214L T1

0.1 01020304050

100

0246810

3.5 3

2.5 2

1.5 1

0.5 0

0 2 4 6 8101520253035404550

VR, REVERSE BIAS VOLTAGE (VOLTS)

, INPUT VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA) h

, DC CURRENT GAIN (NORMALIZED)

Figure 17. V

CE(sat)

versus I

IC, COLLECTOR CURRENT (mA)

020406080

CE(sat)

IMUM

COLLECTOR

VOLTAGE

(VOLTS

Figure 18. DC Current Gain

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

CAPACITANCE

(

Figure 21. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

0.1

0.01

0.001

–25°C

25°C

TA=75°C

VCE = 10

300

250

200

150

100

2 4 6 8 15 20 40 50 60 70 80 90

f = 1 MHz lE = 0 V TA = 25°C

TA= –25°C

25°C

75°C

IC/IB = 10

75°C

25°C

TA= –25°C

VO = 5 V

VO = 0.2 V

TA= –25°C

25°C

75°C

Page 8

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL APPLICATIONS FOR NPN BRTs

LOAD

+12 V

Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

OUT

ISOLATED

LOAD

FROM µP OR

OTHER LOGIC

Figure 23. Open Collector Inverter: Inverts

the Input Signal

Figure 24. Inexpensive, Unregulated Current Source

Page 9

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection

interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.

SOT–23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT-23 POWER DISSIPATION

The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T

J(max)

, the maximum rated junction temperature of the

die, R

θJA

, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows.

PD =

J(max)

– T

θJA

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts.

PD =

150°C – 25°C

625°C/W

= 200 milliwatts

The 625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.

• The soldering temperature and time should not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

Page 10

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 25 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the

actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.

STEP 1

PREHEAT

ZONE 1 “RAMP”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL)

MAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO

219°C PEAK AT SOLDER

JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

100°C

150°C

160°C

170°C

140°C

Figure 25. Typical Solder Heating Profile

Page 11

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

P ACKAGE DIMENSIONS

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100

J 0.0034 0.0070 0.085 0.177 K 0.0180 0.0236 0.45 0.60 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

Page 12

MMUN2211L T1 SERIES

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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MMUN2211LT1/D

*MMUN2211LT1/D*

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