Datasheet MMUN2213LT1, MMUN2213LT3, MMUN2212LT1, MMUN2234LT1, MMUN2235LT1 Datasheet (MOTOROLA)

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1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
Total Power Dissipation @ TA = 25°C
(1)
Derate above 25°C
P
D
*200
1.6
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted) R
θJA
625 °C/W
Operating and Storage Temperature Range TJ, T
stg
–65 to +150 °C
Maximum Temperature for Soldering Purposes, Time in Solder Bath
T
L
260
10
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K)
MMUN221 1LT1 MMUN2212LT1 MMUN2213LT1
A8A A8B A8C
10 22 47
10 22 47
MMUN2214LT1
MMUN2215LT1
(2)
MMUN2216LT1
(2)
MMUN2230LT1
(2)
A8D
A8E A8F A8G
10
10
4.7 1
47
∞ ∞
1
MMUN2231LT1
(2)
MMUN2232LT1
(2)
MMUN2233LT1
(2)
MMUN2234LT1
(2)
A8H
A8J A8K A8L
2.2
4.7
4.7
22
2.2
4.7 47 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2211T1/D)
Order this document
by MMUN2211LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
MMUN2211LT1
SERIES
1
2
3
PIN 3 COLLECTOR (OUTPUT)
PIN 2 EMITTER (GROUND)
PIN 1 BASE (INPUT)
R1
R2
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MMUN2211L T1 SERIES
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
CBO
100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
CEO
500 nAdc
Emitter-Base Cutoff Current MMUN221 1LT1
(VEB = 6.0 V, IC = 0) MMUN2212LT1
MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1
I
EBO
— — — — — — — — — — —
— — — — — — — — — — —
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V
(BR)CBO
50 Vdc
Collector-Emitter Breakdown Voltage
(3)
(IC = 2.0 mA, IB = 0) V
(BR)CEO
50 Vdc
ON CHARACTERISTICS
(3)
DC Current Gain MMUN221 1LT1
(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1
MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1
h
FE
35 60 80
80 160 160
3.0
8.0 15 80 80
60 100 140 140 350 350
5.0 15 30
200 150
— — — — — — — — — — —
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1
V
CE(sat)
0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1
MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) MMUN2213LT1
V
OL
— — — — — — — — — — —
— — — — — — — — — — —
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 0.050 V , RL = 1.0 k Ω) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1
MMUN2216LT1 MMUN2233LT1
V
OH
4.9 Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
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MMUN2211L T1 SERIES
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
(3)
Input Resistor MMUN221 1LT1
MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10 22 47 10 10
4.7
1.0
2.2
4.7
4.7 22
13
28.6
61.1 13 13
6.1
1.3
2.9
6.1
6.1
28.6
k
Resistor Ratio MMUN221 1LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214L T1 MMUN2215L T1/MMUN2216LT1 MMUN2230L T1/MMUN2231LT1/MMUN2232LT1 MMUN2233L T1 MMUN2234L T1
R1/R2 0.8
0.17 —
0.8
0.055
0.38
1.0
0.21 —
1.0
0.1
0.47
1.2
0.25 —
1.2
0.185
0.56
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
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MMUN2211L T1 SERIES
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
V
in
, INPUT VOLTAGE (VOLTS)
TA= –25°C
75°C
25°C
40
50
1
0.1
0.01
0.001 020 406080
IC, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10
1 10 100
IC, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
TA=75°C
25°C
–25°C
TA= –25°C
25°C
IC/IB = 10
75°C
25°C
TA= –25°C
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
5678910
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
75°C
f = 1 MHz lE = 0 V TA = 25°C
VO = 5 V
VCE = 10 V
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
θJA
= 625°C/W
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. V
CE(sat)
versus I
C
Figure 6. V
CE(sat)
versus I
C
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MMUN2211L T1 SERIES
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212L T1
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input V oltage
1000
10
IC, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
100
10
1 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
0.001 246810
TA= –25°C
0
IC, COLLECTOR CURRENT (mA)
100
V
in
, INPUT VOLTAGE (VOLTS)
TA= –25°C
75°C
10
1
0.1 10 20 30 40 50
Figure 11. Input Voltage versus Output Current
0.001
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TA= –25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 6080
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
f = 1 MHz lE = 0 V TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
25°C
TA=75°C
–25°C
VCE = 10 V
25°C
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MMUN2211L T1 SERIES
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213L T1
Figure 12. V
CE(sat)
versus I
C
0246810
100
10
1
0.1
0.01
0.001
I
C
, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
TA= –25°C
75°C
25°C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1 010 203040 50
V
in
, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
TA=75°C
25°C –25°C
100
10
1 100
Figure 16. Input Voltage versus Output Current
0 204060 80
10
1
0.1
0.01 IC, COLLECTOR CURRENT (mA)
TA= –25°C
25°C
75°C
V
CE(sat)
,
MA
X
IMUM
COLLECTOR
VOLTAGE
(VOLTS)
TA= –25°C
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
f = 1 MHz lE = 0 V TA = 25°C
VO = 5 V
VCE = 10 V
IC/IB = 10
VO = 0.2 V
Page 7
MMUN2211L T1 SERIES
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214L T1
10
1
0.1 01020304050
100
10
1
0246810
4
3.5 3
2.5 2
1.5 1
0.5 0
0 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 17. V
CE(sat)
versus I
C
IC, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
,
MA
X
IMUM
COLLECTOR
VOLTAGE
(VOLTS
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C
ob
,
CAPACITANCE
(
p
F)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
0
2 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz lE = 0 V TA = 25°C
TA= –25°C
25°C
75°C
IC/IB = 10
75°C
25°C
TA= –25°C
VO = 5 V
VO = 0.2 V
TA= –25°C
25°C
75°C
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MMUN2211L T1 SERIES
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
V
CC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+
12
V
Figure 23. Open Collector Inverter: Inverts
the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
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MMUN2211L T1 SERIES
9
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T
J(max)
, the maximum rated junction temperature of the
die, R
θJA
, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows.
PD =
T
J(max)
– T
A
R
θJA
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts.
PD =
150°C – 25°C
625°C/W
= 200 milliwatts
The 625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
Page 10
MMUN2211L T1 SERIES
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 25 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1 “RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO
219°C PEAK AT SOLDER
JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
100°C
150°C
160°C
170°C
140°C
Figure 25. Typical Solder Heating Profile
Page 11
MMUN2211L T1 SERIES
11
Motorola Small–Signal Transistors, FETs and Diodes Device Data
P ACKAGE DIMENSIONS
D
J
K
L
A
C
B
S
H
GV
3
1
2
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIMAMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177 K 0.0180 0.0236 0.45 0.60 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
Page 12
MMUN2211L T1 SERIES
12
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MMUN2211LT1/D
*MMUN2211LT1/D*
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