Page 1
UMT2222A / SST2222A / MMST2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A
zFeatu res
1) BV
CEO > 40V (IC=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A.
zPackage, marking, and p ackaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2222A
UMT3
R1P
T106
3000
SST2222A
SST3
R1P
T116
3000
MMST2222A
SMT3
R1P
T146
3000
zAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board
Parameter
UMT2222A,SST2222A,
MMST2222A
SST2222A
Symbol
V
V
V
Tstg
Limits
CBO
CEO
EBO
I
C
0.6
0.2
P
C
0.35
150
Tj
−
55 to +150
Unit
75
40
6
V
V
V
A
W
∗
W
°C
°C
zElectrical characteristics (T a = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
BE(sat)
V
FE
h
f
T
Cob
Cib −−25 pF
td −−10 ns
tr −−25 ns
tstg −−225 ns
tf −−60 ns
−
75
−
40
−
6
−
−
−
−
−−0.3
−−1I
0.6 − 1.2
−−2
35 −− V
50 −−
75 −−
50 −−
100 − 300 V
40 −−
300−−−−8MHzpFV
Rev.A
zDimensions (Unit : mm)
UMT2222A
ROHM : UMT3
EIAJ : SC-70
SST2222A
ROHM : SST3
MMST2222A
ROHM : SMT3
EIAJ : SC-59
I
V
100
100
−
−
−
nA
nA
V
V
V
V
−
C
=
10µA
I
C
=
10mA
I
E
=
10µA
V
CB
=
60V
V
EB
=
3V
IC/IB =
150mA/15mA
C/IB
=
500mA/50mA
C/IB
=
150mA/15mA
I
I
C/IB
=
500mA/50mA
CE
=
10V , IC =
V
CE
=
10V , IC =1
V
CE
=
10V , IC =
V
CE
=
1V , IC =
CE
=
10V , IC =
V
CE
=
10V , IC =
CE
=
20V , IC =−
CB
=
10V , f =100kHz
V
V
EB
=
0.5V , f =100kHz
V
CC
=
30V , V
V
CC
=
30V , V
V
CC
=
30V , IC =
V
CC
=
30V , IC =
0.1mA
mA
10mA
150mA
150mA
500mA
20mA, f =100MHz
BE(OFF)
=
0.5V , IC =
BE(OFF)
=
0.5V , IC =
150mA , I
150mA , I
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
150mA , I
B1
=
=
15mA
=
15mA
15mA
B1
=
15mA
150mA , I
B1
=−
I
B2
B1
=−
I
B2
1/3
Page 2
UMT2222A / SST2222A / MMST2222A
Transistors
zElectrical characteristic curves
100
50
Ta=25°C
600
500
400
300
1000
FE
100
Ta
=25°C
V
CE
=
10V
200
COLLECTOR CURRENT : Ic(mA)
0
COLLECTOR-EMITTER VOLTAGE : V
100
IB=0µA
5
100
CE
(V)
Fig.1 Grounded emitter output
characteristics
(V)
CE(sat)
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
C
/ IB=10
I
1000
FE
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.3 DC current gain vs. collector current(Ι)
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
Ta
=125°C
25
°C
−55
°C
COLLECTOR CURRENT : Ic(mA)
Fig.4 DC current gain vs. collector current(ΙΙ)
Ta
V
=
f
=25°C
CE
1kHz
(V)
1.8
BE(sat)
=
10V
1.6
1.2
Ta=25°C
IC / I
1V
V
CE
=
10V
B
=10
100
AC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.5 AC current gain vs. collector current
0.8
0.4
BASE EMITTER SATURATION VOLTAGE : V
0
1.0 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Rev.A
2/3
Page 3
UMT2222A / SST2222A / MMST2222A
Transistors
1.8
(V)
1.6
BE(ON)
Ta
V
=25°C
CE
=
10V
1000
Ta
IC / I
=25°C
B
=
10
500
Ta
=25°C
VCC=30V
I
C / IB
=
10
1.2
0.8
0.4
BASE EMITTER VOLTAGE : V
0
1 10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation
characteristics
1000
100
STORAGE TIME : Ts(ns)
10
1.0
10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.10 Storage time vs. collector
current
Ta
V
I
C
=25°C
CC
=
10I
=
30V
B1
=
100
(V)
CE
10
100MHz
200MHz
250MHz 300MHz
Ta
=25°C
100
(ns)
100
V
CC
=
30V
TURN ON TIME : ton(ns)
10
1.0
COLLECTOR CURRENT : Ic(mA)
10V
10 100 1000
Fig.8 Turn-on time vs. collector
current
1000
10I
B2
100
FALL TIME : tf(ns)
10
1.0
10 100 1000
COLLECTOR CURRENT : Ic(mA)
Ta
V
I
C
=25°C
=
CC
=
10I
30V
=
10I
B1
B2
Fig.11 Fall time vs. collector
current
1000
(MHz)
Ta
V
=25°C
=
CE
10V
RISE TIME : tr
10
5
1.0
10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.9 Rise time vs. collector
current
100
Cib
Cob
1.0 10 100
REVERSE BIAS VOLTAGE(V)
CAPACITANCE(pF)
10
1
0.1
Fig.12 Input / output capacitance
vs. voltage
Ta
=25°C
f=1MHz
100
1
250MHz
COLLECTOR-EMITTER VOLTAGE : V
0.1
1
10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
CURRENT GAIN-BANDWIDTH PRODUCT
10
1.0
10 100 1000
COLLECTOR CURRENT : Ic(mA)
Fig.14 Gain bandwidth product
vs. collector current
Rev.A
3/3
Page 4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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