Datasheet MMSF3205 Datasheet (MOTOROLA)

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SEMICONDUCTOR TECHNICAL DATA

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Medium Power Surface Mount Products

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MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low R logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–s ource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where induc tive loads are switched and offer additional safety margin against unexpected voltage transients.

• Ultra Low R

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

Specified at Elevated Temperature

DSS

Provides Higher Efficiency and Extends Battery Life

DS(on)

and true

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Motorola Preferred Device

SINGLE TMOS

POWER MOSFET

11 AMPERES

20 VOLTS



CASE 751–06, Style 12

Source Source

Source

Gate

DS(on)

= 0.015 OHM

SO–8

Drain

Top View

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMSF3205R2 13″ 12 mm embossed tape 4000 units

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1998

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MMSF3205

MAXIMUM RATINGS

Negative sign for P–Channel devices omitted for clarity

Drain–to–Source Voltage V Drain–to–Gate Voltage (RGS = 1.0 MΩ) V Gate–to–Source Voltage — Continuous V 1 inch SQ.

FR–4 or G–10 PCB

10 seconds

Minimum FR–4 or G–10 PCB

10 seconds

Operating and Storage Temperature Range TJ, T Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 11 Apk, L = TBD mH, RG = 25 W)

(1) Repetitive rating; pulse width limited by maximum junction temperature.

(TJ = 25°C unless otherwise noted)

Rating

Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current

(1)

Symbol Max Unit

20 V 20 V

± 12 V

2.5 20 11

8.0 55

1.56

12.5

8.6

6.4 43

– 55 to 150 °C

TBD

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

A A A

THJA

DSS DGR

stg

Motorola TMOS Power MOSFET Transistor Device Data

Page 3

MMSF3205

)

f = 1.0 MHz)

)( )

(

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc) T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0) I

(1)

Cpk =

(2)

Max limit – Typ

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 11 Adc) (VGS = 2.5 Vdc, ID = 8.6 Adc)

On–State Drain Current

(VDS ≤ 5.0 V, VGS = 4.5 V)

Forward Transconductance (VDS = 10 Vdc, ID = 11 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge

See Figure 8

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

See Figure 15

Reverse Recovery Stored Charge Q

(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values.

(4) Repetitive rating; pulse width limited by maximum junction temperature.

= 25°C unless otherwise noted)

(VDS = 16 Vdc, VGS = 0 Vdc,

(VDD = 10 Vdc, ID = 1.0 Adc,

(IS = 2.1 Adc, VGS = 0 Vdc) (1)

(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C)

3 x SIGMA

f = 1.0 MHz

= 4.5 Vdc,

RG = 6.0 Ω) (1)

(VDS = 10 Vdc, ID = 11 Adc,

VGS = 4.5 Vdc) (1)

(IS = 2.1 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

(BR)DSS

DSS

GSS

GS(th)

DS(on)

D(on)

iss

oss

rss

d(on)

d(off)

Q Q Q Q

20 —

— —

— — 100 nAdc

0.6 —

— —

20 — — 40 TBD — Mhos

— TBD TBD pF — TBD TBD — TBD TBD

— TBD TBD — TBD TBD — TBD TBD — TBD TBD

T 1 2 3

— TBD TBD — TBD — — TBD — — TBD —

— —

— TBD TBD — TBD — — TBD — — TBD — µC

—

TBD

— —

TBD TBD

— —

1.0

5.0

— —

15 25

1.2 —

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

Vdc

Motorola TMOS Power MOSFET Transistor Device Data

Page 4

MMSF3205

INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface

between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process.

0.060

1.52

0.275

7.0

0.024

0.6

SO–8 POWER DISSIP ATION

The power dissipation of the SO–8 is a function of the input pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T temperature of the die, R device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO–8 package, PD can be calculated as follows:

PD =

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into

, the maximum rated junction

J(max)

, the thermal resistance from the

θJA

J(max)

θJA

– T

0.155

4.0

0.050

1.270

inches

the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.6 Watts.

PD =

150°C – 25°C

80°C/W

= 1.6 Watts

The 80°C/W for the SO–8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.6 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

• Always preheat the device.

• The delta temperature between the preheat and soldering

should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

Motorola TMOS Power MOSFET Transistor Device Data

Page 5

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. T aken together , these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 1 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The

MMSF3205

line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.

200

150

100

50°C

STEP 1

PREHEA T

ZONE 1 “RAMP”

DESIRED CURVE FOR HIGH MASS ASSEMBLIES

TIME (3 TO 7 MINUTES TOTAL)

STEP 2

VENT

“SOAK”

150°C

Figure 1. T ypical Solder Heating Profile

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

100°C

DESIRED CURVE FOR LOW MASS ASSEMBLIES

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

160

140

MAX

STEP 6

VENT

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

170°C

SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)

STEP 7

COOLING

205

TO 219°C PEAK AT SOLDER JOINT

Motorola TMOS Power MOSFET Transistor Device Data

Page 6

MMSF3205

P ACKAGE DIMENSIONS

0.25MB

X 45

SEATING PLANE

0.10

A0.25MCB

CASE 751–06

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. DIMENSIONS ARE IN MILLIMETER.

3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.

MILLIMETERS

DIM MIN MAX

A 1.35 1.75

A1 0.10 0.25

B 0.35 0.49 C 0.19 0.25 D 4.80 5.00 E

3.80 4.00

1.27 BSCe

H 5.80 6.20 h

0.25 0.50

L 0.40 1.25

0 7

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

SO–8

ISSUE T

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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Motorola TMOS Power MOSFET Transistor Device Data

MMSF3205/D