Datasheet MMSD914T1 Datasheet (MOTOROLA)

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SEMICONDUCTOR TECHNICAL DATA

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The switching diode has the following features:

• SOD–123 Surface Mount Package

• High Breakdown Voltage

• Fast Speed Switching Time

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by MMSD914T1/D

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Motorola Preferred Device

1

Cathode

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I

DEVICE MARKING

MMSD914T1 = 5D

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation

Alumina Substrate

Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

(1)

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 µAdc) V
Reverse Voltage Leakage Current (VR = 20 Vdc)

Forward Voltage (IF = 10 mAdc) V
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) C
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) t

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

(VR = 75 Vdc)

R

F

FM(surge)

P

D

R

q

JA

P

D

R

q

JA

stg

(BR)

I

R

F
D

rr

2

Anode

1

CASE 425–04, STYLE 1

SOD–123

100 Vdc
200 mAdc
500 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

100 — Vdc

—
—

— 1000 mVdc
— 4.0 pF
— 4.0 ns

25

5.0

2

mW

mW/°C

mW

mW/°C

nAdc

m

Adc

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a registered trademark of the Berquist Company .

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

MMSD914T1

820

Ω

+10 V

0.1 µF

2 k

100

0.1

µ

I

F

µ

H

F

t

t

r

p

10%

t

I

F

t

rr

t

Ω

OUTPUT

50

PULSE

GENERATOR

100

10

TA = 85

1.0

, FORWARD CURRENT (mA)

F

I

DUT

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

V

R(peak)

R

90%

INPUT SIGNAL

is equal to 10 mA.

Figure 1. Recovery Time Equivalent Test Circuit

10

µ

1.0

°

C

TA = –40°C

TA = 25°C

, REVERSE CURRENT ( A)

R

I

0.1

0.01

I

R

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

i

= 1 mA

R(REC)

OUTPUT PULSE

(IF = IR = 10 mA; measured

at i

R(REC)

= 1 mA)

0.1

0.2 0.4

TA = 25°C

0.6 0.8 1.0

VF, FORWARD VOLTAGE (VOLTS)

1.2

0.001
0

10 20 30 40 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward V oltage Figure 3. Leakage Current

0.68

0.64

0.60

, DIODE CAPACITANCE (pF)

0.56

D

C

0.52
0

2468

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMSD914T1

INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

SOD–123

2.36

0.093

4.19

0.165

SOD–123 POWER DISSIPATION

The power dissipation of the SOD–123 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOD–123
package, PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.

The 556°C/W for the SOD–123 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOD–123 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

, the maximum rated junction temperature of the

J(max)

, the thermal resistance from the device junction to

θJA

PD =

PD =

T

150°C – 25°C

556°C/W

J(max)

R

θJA

– T

A

= 225 milliwatts

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.91

0.036

1.22

0.048

mm

inches

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

3

MMSD914T1

P ACKAGE DIMENSIONS

A

1

K

2

B

D

C

H

E

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.055 0.071 1.40 1.80
B 0.100 0.112 2.55 2.85
C 0.037 0.053 0.95 1.35
D 0.020 0.028 0.50 0.70
E 0.004 ––– 0.25 –––
H 0.000 0.004 0.00 0.10
J ––– 0.006 ––– 0.15
K 0.140 0.152 3.55 3.85

STYLE 1:

PIN 1. CATHODE

2. ANODE

MILLIMETERSINCHES

CASE 425–04

ISSUE C

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Mfax is a trademark of Motorola, Inc.

MMSD914T1/D