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DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ3906,
consisting of four transistors and available in the
SOIC-16 surface mount package, is designed for
general purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
5.0 V
Continuous Collector Current I
C
200 mA
Power Dissipation P
D
1000 mW
Operating and Storage
Junction Temperature TJ,T
stg
-55 to +150 °C
Thermal Resistance (Total Package) Θ
JA
125 °C/W
Thermal Resistance (Each Transistor) Θ
JA
240 °C/W
ELECTRICAL
CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS MIN TYP MAX UNITS
I
CEV
VCE=30V, VEB=3.0V 50 nA
BV
CBO IC
=10µA 40 V
BV
CEO IC
=1.0mA 40 V
BV
EBO IE
=10µA 5.0 V
V
CE(SAT)IC
=10mA, IB=1.0mA 0.25 V
V
CE(SAT)IC
=50mA, IB=5.0mA 0.40 V
V
BE(SAT)IC
=10mA, IB=1.0mA 0.65 0.85 V
V
BE(SAT)IC
=50mA, IB=5.0mA 0.95 V
h
FE
VCE=1.0V, IC=0.1mA 60
h
FE
VCE=1.0V, IC=1.0mA 80
h
FE
VCE=1.0V, IC=10mA 100 300
h
FE
VCE=1.0V, IC=50mA 60
h
FE
VCE=1.0V, IC=100mA 30
f
T
VCE=20V, IC=10mA, f=100MHz 450 MHz
C
ib
VEB=0.5V, f=100kHz 8.0 pF
C
ob
VCB=5.0V, f=100kHz 3.0 pF
NF VCE=5.0V, IC=100µA, R
S
=1.0kΩ, f=10Hz to 15.7kHz 2.5 dB
t
d
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 15 ns
t
r
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 20 ns
t
s
VCC=3.0V, IC=10mA, IB1= IB2=1.0mA 110 ns
t
f
VCC=3.0V, IC=10mA, IB1= IB2=1.0mA 40 ns
MMPQ3906
SURFACE MOUNT
PNP SILICON
QUAD TRANSISTOR
SOIC-16 CASE
Central
Semiconductor Corp.
TM
R0 ( 7-November 2001)
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Central
Semiconductor Corp.
TM
SOIC-16 CASE - MECHANICAL OUTLINE
MMPQ3906
SURFACE MOUNT
PNP SILICON
QUAD TRANSISTOR
R0 ( 7-November 2001)
PIN CONFIGURATION
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