Page 1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Emitter Voltage V
CES
60 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current — Continuous I
C
1.0 Adc
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation @ TA = 25°C
Derate above 25°C
P
D
0.6
4.8
1.4
11.2
Watts
mW/°C
Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.0
8.0
2.5
2.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 10 mAdc, IB = 0)
V
(BR)CEO
40 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
I
CBO
— — 0.5
m
Adc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMPQ3725/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 751B–05, STYLE 4
SO–16
1
16
Motorola, Inc. 1996
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
REV 1
Page 2
MMPQ3725
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
h
FE
35
25
75
45
200
—
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
V
CE(sat)
— 0.32 0.45 Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
V
BE(sat)
0.8 0.9 1.1 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
— 275 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 5.1 — pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ib
— 62 — pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 500 mAdc, IB1 = 50 mAdc, V
BE(off)
= –3.8 Vdc)
t
on
— 20 — ns
Turn–Off Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
t
off
— 50 — ns
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Page 3
MMPQ3725
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to i nsure proper solder connection
interface between the board and the p ackage. With the
correct p ad geometry, the packages will s elf align when
subjected to a solder reflow process.
SO–16
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6
0.050
1.270
0.155
4.0
SO–16 POWER DISSIPATION
The power dissipation of the SO–16 is a function of the
pad size. T his can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
J(max)
, the maximum rated junction temperature of the
die, R
θJA
, the thermal resistance from the device junction to
ambient, a nd the operating temperature, TA. Using t he
values provided on the data sheet for the SO–16 package,
PD can be calculated as follows:
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 1.4 watts.
The 89.3°C/W for the SO–16 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.4 watts. There are
other alternatives to achieving higher power dissipation from
the SO–16 package. Another alternative would be to use a
ceramic s ubstrate o r an aluminum core board s uch a s
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short t ime could r esult in device failure. T herefore, the
following items should always be o bserved in o rder t o
minimize t he thermal s tress t o which the devices a re
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
PD =
T
PD =
150°C – 25°C
89.3°C/W
J(max)
R
θJA
– T
A
= 1.4 watts
Page 4
MMPQ3725
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 751B–05
SO–16
ISSUE J
1 8
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
STYLE 4:
PIN 1. COLLECTOR, DYE #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. COLLECTOR, #3
6. COLLECTOR, #3
7. COLLECTOR, #4
8. COLLECTOR, #4
9. BASE, #4
10. EMITTER, #4
11. BASE, #3
12. EMITTER, #3
13. BASE, #2
14. EMITTER, #2
15. BASE, #1
16. EMITTER, #1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019
_ _ _ _
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Opportunity/Affirmative Action Employer.
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MMPQ3725/D
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