Datasheet mmjt9410-d Datasheet

MMJT9410

l
l

s

Preferred Device

Bipolar Power Transistors

NPN Silicon

Features

• Collector −Emitter Sustaining Voltage −

V

CEO(sus)

• High DC Current Gain −

hFE= 85 (Min) @ IC = 0.8 Adc

• Low Collector −Emitter Saturation Voltage −

V

CE(sat)

• SOT−223 Surface Mount Packaging

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B; > 8000 V

• Pb−Free Package is Available

MAXIMUM RATINGS

Collector− Emitter Voltage V
Collector− Base Voltage V
Emitter− Base Voltage V
Base Current − Continuous I
Collector Current − Continuous

Total Power Dissipation @ TC = 25°C
Derate above 25°C

Total PD @ TA = 25°C mounted on 1” sq.
(645 sq. mm) Collector pad on FR−4
bd material
Total PD @ TA = 25°C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR−4 bd material

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient on

1” sq. (645 sq. mm) Collector pad on FR−4 bd
material

Thermal Resistance, Junction−to−Ambient on

0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material

Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 30 Vdc (Min) @ IC = 10 mAdc

= 60 (Min) @ IC = 3.0 Adc

= 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc

Machine Model, C; > 400 V

Rating Symbol Value Unit

D

stg

JC
JA

JA

L

30 Vdc
45 Vdc

± 6.0 Vdc

1.0 Adc

3.0

5.0

3.0
24

mW/°C

1.7

0.75

−55 to
+150

42 °C/W
75 °C/W

165 °C/W

260 °C

CEO

CB
EB

B

I

− Peak

Characteristic Symbol Max Unit

C

P

T

T

J,

R

q

R

q

R

q

T

Adc

W
W

°C

http://onsemi.com

POWER BJT

IC = 3.0 AMPERES

BV

V

CE(sat)

C 2,4

B 1 E 3

Schematic

1

SOT−223 (TO−261)

CASE 318E

STYLE 1

A = Assembly Location
Y = Year
W = Work Week
9410 = Device Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

MMJT9410 SOT−223 1000 / Tape & Ree
MMJT9410G SOT−223

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

= 30 VOLTS

CEO

= 0.2 VOLTS

(Pb−Free)

4
C

CEB

123

Top View

Pinout

MARKING
DIAGRAM

AYW

9410G

G

1

†

1000 / Tape & Ree

© Semiconductor Components Industries, LLC, 2006

October, 2006 − Rev. 6

1 Publication Order Number:

MMJT9410/D

MMJT9410

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ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

ООООООООООООООООО

(I

= 10 mAdc, IB = 0 Adc)

C

Emitter−Base Voltage

ООООООООООООООООО

(IE = 50 mAdc, IC = 0 Adc)

Collector Cutoff Current

(VCE = 25 Vdc, RBE = 200 W)

ООООООООООООООООО

(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)

Emitter Cutoff Current

ООООООООООООООООО

(VBE = 5.0 Vdc)

ON CHARACTERISTICS (Note 1)

Collector−Emitter Saturation Voltage

ООООООООООООООООО

(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)

ООООООООООООООООО

(IC = 3.0 Adc, IB = 0.3 Adc)

Base−Emitter Saturation Voltage

ООООООООООООООООО

(IC = 3.0 Adc, IB = 0.3 Adc)

Base−Emitter On Voltage

(IC = 1.2 Adc, VCE = 4.0 Vdc)

ООООООООООООООООО

DC Current Gain

(IC = 0.8 Adc, VCE = 1.0 Vdc)

ООООООООООООООООО

(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)

ООООООООООООООООО

DYNAMIC CHARACTERISTICS

Symbol

V

CEO(sus)

ÎÎÎ

V

EBO

ÎÎÎ

I

CER

ÎÎÎ

I

EBO

ÎÎÎ

V

CE(sat)

ÎÎÎ

ÎÎÎ

V

BE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

h

FE

ÎÎÎ

ÎÎÎ

Min

ÎÎ

30

6.0

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

−

ÎÎ

−

ÎÎ

−

−

ÎÎ

85

ÎÎ

80
60

ÎÎ

Typ

ÎÎ

−

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

0.105

0.150

ÎÎ

−

ÎÎ

−

−

ÎÎ

200

ÎÎ

−

−

ÎÎ

Max

ÎÎ

−

−

ÎÎ

20

ÎÎ

200

ÎÎ

10

ÎÎ

0.150

0.200

ÎÎ

0.450

ÎÎ

1.25

1.10

ÎÎ

−

ÎÎ

−

−

ÎÎ

Unit

Vdc

Î

Vdc

Î

mAdc

Î

mAdc

Î

Vdc

Î

Î

Vdc

Î

Vdc

Î

−

Î

Î

Output Capacitance

(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)

ООООООООООООООООО

Input Capacitance

(VEB = 8.0 Vdc)

ООООООООООООООООО

Current−Gain − Bandwidth Product (Note 2)

ООООООООООООООООО

(IC = 500 mA, VCE = 10 Vdc, F

= 1.0 MHz)

test

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. fT = |hFE| • f

test

1.0

0.75

0.50
IC = 3.0 A

1.2 A

10 10

100 10001.0

0.25

, COLLECTOR−EMITTER VOLTAGE (V)

CE(sat)

V

0

0.8 A

0.5 A

0.25 A

IB, BASE CURRENT (mA)

0.25

0.20

0.15

0.10

0.05

, COLLECTOR−EMITTER VOLTAGE (V)

CE(sat)

V

C

ob

ÎÎÎ

C

ÎÎÎ

f

T

ÎÎÎ

0

ib

−

ÎÎ

ÎÎ

ÎÎ

ÎÎ

−

ÎÎ

ÎÎ

−

IC = 0.25 A

IB, BASE CURRENT (mA)

85

200

72

0.5 A

135

ÎÎ

ÎÎ

ÎÎ

1.2 A

0.8 A

100 10001.0

pF

Î

pF

−

−

Î

MHz

Î

Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region

http://onsemi.com

2

MMJT9410

BE(on)

1000

, DC CURRENT GAIN

FE

H

100

1.0

10

10

VCE = 1.0 V

V

BE(sat)

150°C

25°C

−55°C

1.0

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain

IC/IB = 10

1000

150°C

25°C

100

, DC CURRENT GAIN

FE

H

VCE = 4.0 V

100.1

10

IC, COLLECTOR CURRENT (A)

1.0

−55°C

100.1

Figure 4. DC Current Gain

1.0

V

BE(sat)

0.1

V, VOLTAGE (V)

0.1

0.01

1.2

0.8

V, VOLTAGE (V)

0.4

0

VCE = 4.0 V

V

CE(sat)

1.0

IC, COLLECTOR CURRENT (A)

Figure 5. “On” Voltages

−55°C

25°C

150°C

1.0 100.1

IC, COLLECTOR CURRENT (A)

100.1

V, VOLTAGE (V)

0.01

1000

100

CAPACITANCE (pF)

10

1.0

IC/IB = 50

V

CE(sat)

1.0

IC, COLLECTOR CURRENT (A)

Figure 6. “On” Voltages

1.0

VR, REVERSE VOLTAGE (VOLTS)

10 1000.1

100.1

C

ob

Figure 7. V

Voltage Figure 8. Capacitance

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3

MMJT9410

100

VCE = 10 V
f

= 1.0 MHz

test

TA = 25°C

, CURRENT−GAIN BANDWIDTH PRODUCT

t

f

10

IC, COLLECTOR CURRENT (AMP)

Figure 9. Current−Gain Bandwidth Product

4.0

3.0

T

C

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

A

0

50

T, TEMPERATURE (°C)

75 100 125

1.0

10

0.5 ms

1.0

0.1

0.01

, COLLECTOR CURRENT (AMPS)

C

I

0.001

100.1

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0 ms

100 ms

BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT

1.00.1

10 100

Figure 10. Active Region Safe Operating Area

There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 10 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
v 150°C. T

may be calculated from the data in

J(pk)

J(pk)

Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than

15025

the limitations imposed by secondary breakdown.

1.0

D = 0.5

0.1

0.01

RESISTANCE (NORMALIZED)

0.001

r(t), EFFECTIVE TRANSIENT THERMAL

0.0001

Figure 11. Power Derating

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001

0.01 0.10.0001

t, TIME (seconds)

Figure 12. Thermal Response

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4

R

(t) = r(t) q

q

JA

qJA = 165°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

− TA = P

JA

1

(pk) qJA

(t)

10 1001.0

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

1000

MMJT9410

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE L

0.08 (0003)

H

e1

E

A1

D

b1

4

123

e

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

E

b

q

A

C

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087

e1
L1 1.50 1.75 2.00 0.060

H

E

q

STYLE 1:

PIN 1. BASE

L1

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264
0° 10° 0° 10°

− −

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

SOLDERING FOOTPRINT*

3.8

0.15

2.0

0.079

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

mm

ǒ

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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MMJT9410/D