Datasheet MMG05N60D, MMG05N60DT1, MMG05N60DT3 Datasheet (MOTOROLA)

1

Motorola IGBT Device Data

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N–Channel Enhancement–Mode Silicon Gate

This IGBT contains a built–in free wheeling diode and a gate
protection zener diodes. Fast switching characteristics result in
efficient operation at higher frequencies. This device is ideally
suited for high frequency electronic ballasts.

• Built–In Free Wheeling Diode

• Built–In Gate Protection Zener Diodes

• Industry Standard Package (SOT223)

• High Speed E

off

: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and

dV/dt = 1000 V/ms

• Robust High Voltage Termination

• Robust Turn–Off SOA

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameters Symbol Value Unit

Collector–Emitter Voltage V

CES

600 Vdc

Collector–Gate Voltage (RGE = 1.0 MΩ) V

CGR

600 Vdc

Gate–Emitter Voltage — Continuous V

CGR

±15 Vdc

Collector Current — Continuous @ TC = 25°C

Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)

I

C25

I

C90

I

CM

0.5

0.3

2.0

Adc

Total Device Dissipation @ TC = 25°C P

D

1.0 Watt

Operating and Storage Junction Temperature Range TJ, T

stg

–55 to 150 °C

Thermal Resistance — Junction to Case – IGBT

Thermal Resistance — Junction to Ambient

R

θJC

R

θJA

30

150

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T

L

260 °C

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T

C

≤ 150°C)

Single Pulse Drain–to–Source Avalanche

Energy – Starting @ TC = 25°C

Energy – Starting @ TC = 125°C

VCE = 100 V , VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25

W

E

AS

125

40

mJ

(1) Pulse width is limited by maximum junction temperature repetitive rating.

Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

REV 2

Order this document

by MMG05N60D/D

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SEMICONDUCTOR TECHNICAL DATA



IGBT

0.5 A @ 25°C

600 V

CASE 318E–04

STYLE 13

TO–261A

1

2

3

4

1 = G
2 = 4 = C
3 = E

C

E

G

 Motorola, Inc. 1998

MMG05N60D

2

Motorola IGBT Device Data

ELECTRICAL CHARACTERISTICS

(T

J

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)
T emperature Coef ficient (Positive)

V

(BR)CES

600

—

680

0.7

—
—

Vdc

V/°C

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)

I

CES

I

CES

—
—

0.1

5.0

5.0
50

µAdc

Gate–Body Leakage Current (VGE = ±15 Vdc, VCE = 0 Vdc) I

GES

— 10 100

m

Adc

ON CHARACTERISTICS

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)

V

CE(on)

—
—

1.6

1.5

2.0
—

Vdc

Gate Threshold Voltage

(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)

V

GE(th)

3.5
—

—

6.0

6.0
—

Vdc

mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) g

fe

0.3 0.42 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

ies

— 75 100 pF

Output Capacitance

(VCE = 20 Vdc, VGE = 0 Vdc,

f = 1.0 MHz

)

C

oes

— 11 20

Transfer Capacitance

f = 1.0 MHz)

C

res

— 1.6 5.0

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 0.3 Adc, TC = 25°C)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc, TC = 25°C)
(IEC = 0.1 Adc, TC = 125°C)

V

FEC

—
—
—
—

5.0

5.2

2.3

2.3

6.0
—

3.0
—

Vdc

Reverse Recovery Time @ TC = 25°C

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

t

rr

— 150 —

ns

Reverse Recovery Stored Charge

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

Q

RR

— 35 —

m

C

SWITCHING CHARACTERISTICS (1)

Turn–Off Delay Time

(VCC = 300 Vdc, IC = 0.4 Adc,

t

d(off)

— 28 — ns

Fall Time

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

T

= 25°C, dV/dt = 1000 V/ms

)

t

f

— 150 —

Turn–Off Switching Loss

T

C

=

25 C, dV/dt = 1000 V/ms)

Energy losses include “tail”

E

off

— 3.25 4.25

m

J

Turn–Off Delay Time

(VCC = 300 Vdc, IC = 0.4 Adc,

t

d(off)

— 21 — ns

Fall Time

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

T

= 125°C, dV/dt = 1000 V/ms

)

t

f

— 280 —

Turn–Off Switching Loss

T

C

=

125 C, dV/dt = 1000 V/ms)

Energy losses include “tail”

E

off

— 8.0 10

m

J

Gate Charge (VCC = 300 Vdc, IC = 0.3 Adc,

VGE = 15 Vdc)

Q

T

— 6.4 — nC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

MMG05N60D

3

Motorola IGBT Device Data

Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics

Figure 3. Saturation Characteristics Figure 4. Collector–To–Emitter Saturation

Voltage versus Case Temperature

Figure 5. Diode Forward Voltage Figure 6. Diode Forward Voltage versus Case

Temperature

1

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

2.5

2.0

1.5

1.0

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

60

1.5

0.5

0

TC, CASE TEMPERATURE (

°

C)

0–25

2.0

1.8

1.7

1.6

1.5

1.4
25

0.5 1.50

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

22

12

7

2

TC, CASE TEMPERATURE (

°

C)

50 125

10

8

6

2

0

1001.0

I

C

, COLLECTOR CURRENT (AMPS)

V

CE

, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

0.5

0

23 12345

1.0

2.0

2.5

50 75 100 125 150

, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)V

FEC

2.0

17

25 75 150

4

V

FEC

, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

4

I

C

, COLLECTOR CURRENT (AMPS)

1

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

2.5

2.0

1.5

1.0

I

C

, COLLECTOR CURRENT (AMPS)

0.5

0

234

1.9

TC = 25°C

VGE = 15 V

12.5 V

10 V

8.0 V

TC = 150°C

VGE = 15 V

12.5 V

10 V

8.0 V

TC = –20°C

VGE = 15 V

12.5 V

10 V

8.0 V

700 mA

VG = 15 V

500 mA

IC = 300 mA

TC = 150°C

–20°C

25°C

500 mA

300 mA

IF = 100 mA

MMG05N60D

4

Motorola IGBT Device Data

Figure 7. Capacitance Variation Figure 8. Gate–To–Emitter Voltage versus

Total Charge

Figure 9. Total Switching Losses versus

Collector Current

Figure 10. Total Switching Losses versus

Case Temperature

Figure 11. Minimum Turn–Off

Safe Operating Area

20 250

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

150

100

50

Qg, TOTAL GATE CHARGE (nC)

60

10

5

0

2.00

IC, COLLECTOR CURRENT (AMPS)

60

40

30

20

10

0

TC, CASE TEMPERATURE (

°

C)

5025

20

15

10

5

0

1.5

100 3000

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

2.5

2.0

1.5

1.0

0.5

0

200

C, CAPACITANCE (pF)

V

, TOTAL SWITCHING ENERGY LOSSES ( J)

0

10515 712345

15

m

0.5 1.0 75 100 150

, COLLECTOR CURRENT (AMPS)I

C

400 600500

, GATE–T O–EMITTER VOLTAGE (VOLTS)

GE

50

E

ts

125

, TOTAL SWITCHING ENERGY LOSSES ( J)

m

E

ts

VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25

°

C

TC = 25°C
VGE = 0 V

C

ies

C

oes

C

res

L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25

W

dV/dt = 1.0 kV/ms

TC = 125°C

25°C

L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25

W

dV/dt = 1.0 kV/ms

IC = 0.7 A

0.3 A

TC = 125°C
VGE = 15 V
RG = 25

W

L = 3.0 mH

MMG05N60D

5

Motorola IGBT Device Data

t, TIME (ms)

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

1.0

0.1

0.01

D = 0.5

SINGLE PULSE

1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01

0.2

0.1

0.05

0.02

0.01

1.0E+02 1.0E+03

0.001

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 30°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

Figure 12. Typical Thermal Response

inches

1.5

0.059

6.2

0.244

mm

1.5

0.059

1.5

0.059

2.0

0.079

2.3

0.091

4.6

0.181

2.0

0.079

3.8

0.15

MMG05N60D

6

Motorola IGBT Device Data

P ACKAGE DIMENSIONS

CASE 318E–04

TO–261A

ISSUE H

H

S

F

A

B

D

G

L

4

123

0.08 (0003)

C

M

K

J

DIMAMIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100
J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05
M 0 10 0 10
S 0.264 0.287 6.70 7.30

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

____

STYLE 13:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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MMG05N60D/D

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