Datasheet MMFT107T1 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount

This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.

• Silicon Gate for Fast Switching Speeds

• R

• Low Drive Requirement

• The SOT–223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.

• Available in 12 mm Tape and Reel

MAXIMUM RATINGS

Drain–to–Source Voltage V
Gate–to–Source Voltage — Non–Repetitive V
Drain Current I
Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Temperature Range TJ, T

DEVICE MARKING

FT107

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient R
Maximum Temperature for Soldering Purposes

Time in Solder Bath

1. Device mounted on FR–4 glass epoxy printed circuit using minimum recommended footprint.

= 14 Ohm Max

DS(on)

Use MMFT107T1 to order the 7 inch/1000 unit reel
Use MMFT107T3 to order the 13 inch/4000 unit reel

(TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

(1)

2,4 DRAIN

1
GATE

3 SOURCE



DSS

GS

D

P

D

θJA

T

L

stg



Motorola Preferred Device

MEDIUM POWER

TMOS FET

250 mA, 200 VOL TS

R

CASE 318E–04, STYLE 3

–65 to 150 °C

= 14 OHM MAX

DS(on)

1

2

3

TO–261AA

200 Volts
±20 Volts
250 mAdc

0.8

6.4

156 °C/W
260

10

4

Watts

mW/°C

°C

Sec

TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

MMFT107T1

)

f = 1.0 MHz)

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

(TA = 25°C unless otherwise noted)

OFF CHARACTERISTICS

Drain–to–Source Breakdown V oltage

(VGS = 0, ID = 10 µA)

Zero Gate Voltage Drain Current

(VDS = 130 V, VGS = 0)

Gate–Body Leakage Current — Reverse

(VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 200 mA)

Drain–to–Source On–Voltage

(VGS = 10 V, ID = 200 mA)

Forward Transconductance

(VDS = 25 V, ID = 250 mA)

(1)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz

SOURCE DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage
Continuous Source Current, Body

Diode

Pulsed Source Current, Body Diode

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤2.0%.

IS = 250 mA)

(VGS = 0,

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

V

F

I

S

I

SM

200 — — Vdc

— — 30 nAdc

— — 10 nAdc

1.0 — 3.0 Vdc

— — 14 Ohms

— — 2.8 Vdc

— 300 — mmhos

— 60 —
— 30 —
— 6.0 —

— 0.8 — V
— — 250

— — 500

pF

mA

2.5

2

1.5

1

, DRAIN CURRENT (AMPS)

D

I

0.5

0

2

TYPICAL ELECTRICAL CHARACTERISTICS

500

D

400

300

200

100

0

VDS = 10 V

TJ = 125°C

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

25°C

–55°C

TJ = 25°C

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

VGS = 10 V

6 V

4 V

3 V

5 V

, DRAIN CURRENT (mA)
I

1086420

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Motorola Small–Signal Transistors, FETs and Diodes Device Data

543210

TYPICAL ELECTRICAL CHARACTERISTICS

MMFT107T1

10

VGS = 10 V

8

6

4

2

, DRAIN–SOURCE RESISTANCE (OHMS)

DS(on)

R

0

1000

200 300 400 500

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

1

0.1

, DRAIN CURRENT (AMPS)

D

I

0.01

TJ = 125°C

0

0.3 0.6 0.9 1.2 1.5

VSD, SOURCE–DRAIN DIODE FORWARD VOLTAGE (VOLTS)

25°C

TJ = 125°C

25°C

–55°C

10

ID = 1 A
VGS = 10 V

1

, DRAIN–SOURCE RESISTANCE (NORMALIZED)

0.1

DS(on)

–75 –50 –25 0 25 50 75 100 125 150

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. On–Resistance Variation with Temperature

250

VGS = 0 V

200

150

100

C, CAPACITANCE (pF)

f = 1 MHz
TJ = 25

°

C

C

iss

50

C

0

0 5 10 15 20 25 30

C

oss

rss

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 5. Source–Drain Diode Forward Voltage

10

ID = 200 mA

9
8
7
6
5
4
3
2

, GATE–T O–SOURCE VOLTAGE (VOLTS)

1

GS

V

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VDS = 100 V

160 V

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Gate Charge versus Gate–to–Source V oltage

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2

1.5

1

0.5

, TRANSCONDUCT ANCE (mhos)

FS

g

0

Figure 6. Capacitance Variation

VDS = 10 V

TJ = –55°C

25°C

125°C

1000 200 300 400 500

ID, DRAIN CURRENT (AMPS)

Figure 8. Transconductance

3

MMFT107T1

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

0.079

2.0

0.091

2.3

0.079

2.0

0.059

1.5

SOT-223

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT-223 package,
PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 0.8 watts.

The 156°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 0.8 watts. There are
other alternatives to achieving higher power dissipation from
the SOT-223 package. One is to increase the area of the
collector pad. By increasing the area of the collector pad, the
power dissipation can be increased. Although the power

, the maximum rated junction temperature of the

J(max)

, the thermal resistance from the device junction to

θJA

PD =

PD =

T

150°C – 25°C

J(max)

R

θJA

– T

A

= 0.8 watts

156°C/W

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.15

3.8

0.248

6.3

inches

mm

0.059

1.5

0.091

2.3

0.059

1.5

dissipation can almost be doubled with this method, area is
taken up on the printed circuit board which can defeat the
purpose of using surface mount technology . A graph of R
versus collector pad area is shown in Figure 9.

160

Board Material = 0.0625

140

120

°

to Ambient ( C/W)

100

JA

θ

R , Thermal Resistance, Junction

80

0.0 0.2 0.4 0.6 0.8 1.0

G-10/FR-4, 2 oz Copper

0.8 Watts

*Mounted on the DPAK footprint

″

1.25 Watts*

A, Area (square inches)

Figure 9. Thermal Resistance versus Collector

Pad Area for the SOT-223 Package (Typical)

Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

θJA

TA = 25°C

1.5 Watts

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SOLDER STENCIL GUIDELINES

MMFT107T1

Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.

TYPICAL SOLDER HEA TING PROFILE

For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 10 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the

or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.

• The soldering temperature and time should not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177 –189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.

200

150

100

STEP 1

PREHEA T

ZONE 1
“RAMP”

DESIRED CURVE FOR HIGH

°

C

°

C

°

C

50

°

C

TIME (3 TO 7 MINUTES TOTAL)

STEP 2

VENT

“SOAK”

MASS ASSEMBLIES

150°C

100°C

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

ZONES 3 & 6

160

°

140

Figure 10. T ypical Solder Heating Profile

Motorola Small–Signal Transistors, FETs and Diodes Device Data

STEP 4

HEATING

“SOAK”

C

°

C

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

170

°

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

STEP 6

VENT

C

T

MAX

STEP 7

COOLING

205

°

TO

219

°

C
PEAK AT
SOLDER

JOINT

5

MMFT107T1

0.08 (0003)

S

123

L

H

P ACKAGE DIMENSIONS

A
F

4

B

D

G

J

C

M

K

CASE 318E–04

ISSUE H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.249 0.263 6.30 6.70

B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89

F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100

J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00

L 0.033 0.041 0.85 1.05
M 0 10 0 10

____

S 0.264 0.287 6.70 7.30

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERS

TO-261AA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.

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6

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Mfax is a trademark of Motorola, Inc.

MMFT107T1/D