Page 1
Features
Epitaxial Planar Die Construction
·
Complementary NPN Type Available
·
(MMDT4124)
Ideal for Medium Power Amplification and
·
Switching
Ultra-Small Surface Mount Package
·
Mechanical Data
NEW PRODUCT
· Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
·
Method 208
Terminal Connections: See Diagram
·
· Marking: K2B
· Weight: 0.006 grams (approx.)
MMDT4126
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-363
K
J
A
C2B1E
KXX
E2B2C
H
1
KXX
1
FD
C
B
L
Dim Min Max
A
B
C
D
F
H
M
J
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Maximum Ratings
Characteristic Symbol MMDT4126 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Maximum combined dissipation.
@ TA= 25°C unless otherwise specified
V
V
V
R
T
j,TSTG
CBO
CEO
EBO
I
C
P
qJA
-25 V
-25 V
-4.0 V
-200 mA
d
200
625 K/W
-55 to +150 °C
mW
DS30160 Rev. D-1 1 of 2 MMDT4126
Page 2
Electrical Characteristics
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(SAT)
V
BE(SAT)
C
C
h
f
FE
obo
ibo
fe
T
-25 ¾ V
-25 ¾ V
-4.0 ¾ V
¾ -50 nA
¾ -50 nA
120
60
360
¾
¾ -0.40 V
¾ -0.95 V
¾ 4.5 pF
¾ 10 pF
120 480 ¾
250 ¾ MHz
NF ¾ 4.0 dB
¾
= -10mA, IE= 0
I
C
I
= -1.0mA, IB= 0
C
= -10mA, IC= 0
I
E
= -20V, IE= 0V
V
CB
V
= -3.0V, IC= 0V
EB
= -2.0mA, VCE= -1.0V
I
C
I
= -50mA, VCE= -1.0V
C
I
= -50mA, IB= -5.0mA
C
= -50mA, IB= -5.0mA
I
C
= -5.0V, f = 1.0MHz, IE= 0
V
CB
V
= -0.5V, f = 1.0MHz, IC= 0
EB
= -1.0V, IC= -2.0mA,
V
CE
f = 1.0kHz
V
= -20V, IC= -10mA,
CE
f = 100MHz
= -5.0V, IC= -100mA,
V
CE
= 1.0kW, f = 1.0kHz
R
S
DS30160 Rev. D-1 2 of 2 MMDT4126
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