Page 1
1
Motorola Bipolar Power Transistor Device Data
SO–8 for Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
• Collector –Emitter Sustaining Voltage — V
CEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE
= 100 Vdc (Min) @ IC = 1.0 Adc
= 90 Vdc (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — V
CE(sat)
= 0.235 Vdc (Max) @ IC = 1.2 Adc
= 0.5 Vdc (Max) @ IC = 5.0 Adc
• Miniature SO–8 Surface Mount Package – Saves Board Space
MARKING: 3N3BJT ENG
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V
CB
45
Vdc
Collector–Emitter Voltage
V
CEO
30
Vdc
Emitter–Base Voltage
V
EB
± 8.0
Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
3.0
5.0
Adc
Base Current — Continuous
I
B
1.0
Adc
Operating and Storage Junction Temperature Range
TJ, T
stg
–55 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance – Junction to Ambient
(1)
R
θJA
62.5
_
C/W
Total Power Dissipation @ TA = 25_C
(1)
Derate above 25_C
P
D
2.0
16
Watts
mW/_C
Maximum Temperature for Soldering
T
L
260
_
C
(1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3N03BJT/D
Motorola, Inc. 1996
DUAL BIPOLAR
POWER TRANSISTOR
NPN SILICON
30 VOLTS
3 AMPERES
CASE 751–05, Style 16
(SO–8)
Motorola Preferred Device
Emitter–1
1
2
3
4
8
7
6
5
Top View
Pinout
Base–1
Emitter–2
Base–2
Collector–1
Collector–1
Collector–2
Collector–2
C
B
E
C
B
E
Schematic
Page 2
MMDJ3N03BJT
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
Temperature Coefficient (Positive)
V
CEO(sus)
—
—
—
—
30
tbd
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
V/°C
Collector Cutoff Current
(VCE = 25 Vdc)
I
CEO
—
—
50
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0 Adc)
I
EBO
—
—
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS
(1)
Collector–Emitter Saturation Voltage
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
V
CE(sat)
—
—
0.130
—
0.235
0.500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
V
BE(sat)
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage
(IC = 2.0 Adc, VCE = 1.0 Vdc)
V
BE(on)
—
—
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
h
FE
100
90
180
165
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
C
ob
—
80
135
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Input Capacitance
(VEB = 8.0 Vdc, f = 1.0 MHz)
C
ibo
—
200
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Current–Gain — Bandwidth Product
(2)
f
T
tbd
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
SWITCHING CHARACTERISTICS
(1)
Resistive Load
Delay Time
t
d
— 215 — ns
Rise Time
(IC = 2.0 Adc, IB1 = IB2 = 30 mAdc, VCC = 10 Vdc) t
r
— 100 — ns
Storage Time t
s
— 530 — ns
Fall Time t
f
— 60 — ns
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S f
test
Page 3
MMDJ3N03BJT
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 751–05
ISSUE P
SEATING
PLANE
1
4
58
C
K
4X P
A0.25 (0.010)MT B
S S
0.25 (0.010)
M
B
M
8X D
R
M
J
X 45
_
_
F
–A–
–B–
–T–
DIM MIN MAX
MILLIMETERS
A 4.80 5.00
B 3.80 4.00
C 1.35 1.75
D 0.35 0.49
F 0.40 1.25
G 1.27 BSC
J 0.18 0.25
K 0.10 0.25
M 0 7
P 5.80 6.20
R 0.25 0.50
__
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
Page 4
MMDJ3N03BJT
4
Motorola Bipolar Power Transistor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MMDJ3N03BJT/D
*MMDJ3N03BJT/D*
◊
Loading...