Datasheet MMDFS2P102R2 Datasheet (Motorola)

1

Motorola TMOS Product Preview Data

  

FETKY



MOSFET and Schottky Rectifier

The FETKY product family incorporates low R

DS(on)

, true logic level MOSFETs
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers
to offer high efficiency components in a space saving configuration. Independent pinouts
for TMOS and Schottky die allow the flexibility to use a single component for switching
and rectification functions in a wide variety of applications such as Buck Converter,
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage­ment in Battery Packs, Chargers, Cell Phones and other Portable Products.

• HDTMOS Power MOSFET with Low V

F

, Low IR Schottky Rectifier

• Lower Component Placement and Inventory Costs along with

Board Space Savings

• Logic Level Gate Drive — Can be Driven by Logic ICs

• Mounting Information for SO–8 Package Provided

• I

DSS

Specified at Elevated Temperature

• Applications Information Provided

MOSFET MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

(1)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

20 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MW)

V

DGR

20 Vdc

Gate–to–Source Voltage — Continuous V

GS

"

20 Vdc

Drain Current

(3)

— Continuous @ TA = 25°C
— Continuous @ TA = 100°C
— Single Pulse (tp v 10 ms)

I

D

I

D

I

DM

3.3

2.1
20

Adc

Apk

Total Power Dissipation @ TA = 25°C

(2)

P

D

2.0 Watts

Single Pulse Drain–to–Source Avalanche Energy — STAR TING TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25

W

E

AS

324 mJ

SCHOTTKY RECTIFIER MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V

RRM

V

R

20 Volts

Average Forward Current

(3)

(Rated VR) TA = 100°C I

O

1.0 Amps

Peak Repetitive Forward Current

(3)

(Rated VR, Square Wave, 20 kHz) TA = 105°C I

frm

2.0 Amps

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

I

fsm

20 Amps

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

2P102

MMDFS2P102R2 13″ 12 mm embossed tape 2500 units

(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
(3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.

Order this document

by MMDFS2P102/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMDFS2P102

P–Channel Power MOSFET

with Schottky Rectifier

20 Volts

R

DS(on)

= 0.16

W

VF = 0.39 Volts

CASE 751–05, Style 18

(SO–8)

1
2

3

4

8
7

6

5

A
A
S

G

C
C
D
D

TOP VIEW



 Motorola, Inc. 1997

MMDFS2P102

2

Motorola TMOS Product Preview Data

THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET

Thermal Resistance — Junction–to–Ambient

(1)

— MOSFET

R

q

JA

167

°C/W

Thermal Resistance — Junction–to–Ambient

(2)

— MOSFET

R

q

JA

100

Thermal Resistance — Junction–to–Ambient

(3)

— MOSFET

R

q

JA

62.5

Thermal Resistance — Junction–to–Ambient

(1)

— Schottky

R

q

JA

204

Thermal Resistance — Junction–to–Ambient

(2)

— Schottky

R

q

JA

122

Thermal Resistance — Junction–to–Ambient

(3)

— Schottky

R

q

JA

83

Operating and Storage Temperature Range Tj, T

stg

–55 to 150

(1) Mounted with minimum recommended pad size, PC Board FR4.
(2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
(3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

MMDFS2P102

3

Motorola TMOS Product Preview Data

MOSFET ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

(1)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Voltage

(VGS = 0 Vdc, ID = 0.25 mA)
T emperature Coef ficient (Positive)

V

(BR)DSS

20

—

—
25

—
—

Vdc

mV/°C

Zero Gate Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
10

µAdc

Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

(2)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)
T emperature Coef ficient (Negative)

V

GS(th)

1.0
—

1.5

4.0

2.0
—

Vdc

mV/°C

Static Drain–Source Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)

R

DS(on)

—
—

0.118

0.152

0.160

0.180

Ohms

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) g

FS

2.0 3.0 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 420 588 pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

)

C

oss

— 290 406

Reverse Transfer Capacitance

f = 1.0 MHz)

C

rss

— 116 232

SWITCHING CHARACTERISTICS

(3)

Turn–On Delay Time

t

d(on)

— 19 38 ns

Rise Time

(VDS = 10 Vdc, ID = 2.0 Adc,

t

r

— 66 132

Turn–Off Delay Time

V

GS

= 4.5 Vdc,

RG = 6.0 Ω)

t

d(off)

— 25 50

Fall Time

G

)

t

f

— 37 74

Gate Charge

Q

T

— 15 20

nC

(VDS = 16 Vdc, ID = 2.0 Adc,

Q

1

— 1.2 —

(

DS

,

D

,

VGS = 10 Vdc)

Q

2

— 5.0 —

Q

3

— 4.0 —

DRAIN SOURCE DIODE CHARACTERISTICS

Forward On–Voltage

(2)

(IS = 2.0 Adc,
VGS = 0 Vdc)

V

SD

— 1.5 2.1

V

Reverse Recovery Time

t

rr

— 38 —

ns

(IS = 2.0 Adc, VDD = 15 V,

t

a

— 17 —

(

S

,

DD

,

dIS/dt = 100 A/µs)

t

b

— 21 —

Reverse Recovery Stored Charge Q

RR

— 0.034 — µC

SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Maximum Instantaneous Forward Voltage

(2)

V

F

TJ = 25°C TJ = 125°C

Volts

IF = 1.0 A
IF = 2.0 A

0.47

0.58

0.39

0.53

Maximum Instantaneous Reverse Current

(2)

I

R

TJ = 25°C TJ = 125°C

mA

VR = 20 V

0.05 10

Maximum Voltage Rate of Change VR = 20 V dV/dt 10,000

V/ms

(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%.
(3) Switching characteristics are independent of operating temperature.

MMDFS2P102

4

Motorola TMOS Product Preview Data

TYPICAL FET ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–T o–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

1.20

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

4.0

3.0

2.0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

3.51.0

3.0

2.0

1.0

0

8.0 100

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

0.6

0.4

0.3

0.2

0.1

0

ID, DRAIN CURRENT (AMPS)

0.50

0.20

0.16

0.12

0.08

0.04

1.0

–25 25–50

TJ, JUNCTION TEMPERATURE (

°

C)

1.2

0.8

0.6

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

5.0 200

100

1.0
150

I

D

, DRAIN CURRENT (AMPS)

I

R

1.0

0

0.60.2 0.4 0.8 1.0 1.4 1.6 1.5 2.0 2.5 3.0

4.0

2.0 4.0 6.0 1.5 2.0 2.5 3.0 3.5 4.0

, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)R

DS(on)

50 10075

1.0

10

10

I

DSS

, LEAKAGE (nA)

1.8

, DRAIN CURRENT (AMPS)

D

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

0.5

R , DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

125 150

1.4

1.6
VGS = 10 V

ID = 2.0 A

VGS = 0 V

TJ = 125°C

100°C

TJ = 25°C

VGS = 4.5 V

10 V

TJ = 25°C

ID = 1.0 A

VDS ≥ 10 V

TJ = –55°C

100°C

25°C

TJ = 25°C

3.1 V

VGS = 2.4 V

10 V

4.5 V

3.8 V

MMDFS2P102

5

Motorola TMOS Product Preview Data

TYPICAL FET ELECTRICAL CHARACTERISTICS

Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06

″

thick single sided) with one die operating, 10 s max.

Figure 7. Capacitance Variation

Figure 8. Gate–To–Source and

Drain–To–Source Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

5.0 20–10

GATE–T O–SOURCE OR DRAIN–TO–SOURCE VOLT AGE (VOLTS)

1200

800

1000

600

QG, TOTAL GATE CHARGE (nC)

160

6.0

4.0

2.0

0

1001.0

RG, GATE RESISTANCE (OHMS)

1000

100

10

VSD, SOURCE–TO–DRAIN VOL TAGE (VOLTS)

0.5

2.0

1.6

1.2

0.8

0.4

0

0.7

0.1
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

0.1

0.01

TJ, STARTING JUNCTION TEMPERATURE (

°

C)

50 15025

350

300

50

0

1.0

C, CAPACITANCE (pF)

V

400

200

0

–5.0 0 10 4.0 8.0 12

12

10 0.9 1.1 1.3 1.5

, DRAIN CURRENT (AMPS)I

D

10

1.0

75 100 125

100

E

AS

, SINGLE PULSE DRAIN–TO–SOURCE

15

, GATE–T O–SOURCE VOLT AGE (VOLTS)

GS

t, TIME (ns)

I , SOURCE CURRENT (AMPS)

S

100

10

100

10

8.0

150

200

250

AVALANCHE ENERGY (mJ)

ID = 6.0 A

VDS = 0 VGS = 0

TJ = 25°C

VGS = 0 V

TJ = 25

°

C

C

iss

C

iss

C

oss

C

rss

C

rss

ID = 2.0 A

TJ = 25°C

V

DS

V

GS

Q

T

Q2Q1

Q3

t

d(off)

t

d(on)

t

r

t

f

R

DS(on)

LIMIT

THERMAL LIMIT

PACKAGE LIMIT

dc

10 ms

1.0 ms
100 ms

10 ms

VGS = 20 V

SINGLE PULSE

TC = 25

°

C

VGSV

DS

0

18
16
14
12
10

8.0

6.0

4.0

2.0

MMDFS2P102

6

Motorola TMOS Product Preview Data

TYPICAL FET ELECTRICAL CHARACTERISTICS

Figure 13. FET Thermal Response

Figure 14. Diode Reverse Recovery Waveform

di/dt

t

rr

t

a

t

p

I

S

0.25 I

S

TIME

I

S

t

b

t, TIME (s)

Rthja(t), EFFECTIVE TRANSIENT

THERMAL RESPONSE

1.0

0.1

0.001

D = 0.5

SINGLE PULSE

1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01

0.2

0.1

0.05

0.02

0.01

1.0E+02 1.0E+03

0.0001

0.01

NORMALIZED TO R

q

JA

AT STEADY STATE (1″ PAD)

CHIP
JUNCTION

0.0175

W

0.0154 F

0.0710

W

0.0854 F

0.2706

W

0.3074 F

0.5776

W

1.7891 F

0.7086

W

107.55 F

AMBIENT

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

TJ = 125°C

Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage

0.7 1.00.1

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

10

1.0

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOL TS)

1.40

1.0

0.1

I

F

, INSTANTANEOUS FORWARD CURRENT (AMPS)

0.1

0.40.2 0.3 0.5 0.6 0.8 0.9 0.2 0.4 0.6 0.8

10

I

F

, INSTANTANEOUS FORWARD CURRENT (AMPS)

1.0 1.2

85°C 25°C

–40°C

TJ = 125°C

25°C

85°C

MMDFS2P102

7

Motorola TMOS Product Preview Data

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current

Figure 19. Typical Capacitance Figure 20. Current Derating

Figure 21. Forward Power Dissipation

15 200

VR, REVERSE VOLTAGE (VOLTS)

1E–2

1E–4

1E–3

1E–5

15 200

VR, REVERSE VOLTAGE (VOLTS)

1000

100

10

TA, AMBIENT TEMPERATURE (

°

C)

200

1.6

0.8

0.6

0.4

0.2
0

40

0

IO, AVERAGE FORW ARD CURRENT (AMPS)

0.5

0.4

0.3

0.2

0.1
0

0.5

I

R

, REVERSE CURRENT (AMPS)

1E–6

1E–7

5.0 10

5.0 10 60 80 100 120 140 160

, AVERAGE POWER DISSIPA TION (WATTS)P

FO

1.0 1.5

C, CAPACITANCE (pF)

I , AVERAGE FORWARD CURRENT (AMPS)

O

2.0

0.6

0.7

15 200

VR, REVERSE VOLTAGE (VOLTS)

1E–1

1E–3

1E–2

1E–4

I

R

, MAXIMUM REVERSE CURRENT (AMPS)

1E–5

1E–6

5.0 10

1.0

1.2

1.4

SQUARE

WAVE

dc

Ipk/Io = 5.0

Ipk/Io =

p

Ipk/Io = 10

Ipk/Io = 20

TYPICAL CAP ACITANCE A T 0 V = 170 pF

TJ = 125°C

25°C

TJ = 125°C

25°C

85°C

FREQ = 20 kHz

dc

SQUARE WAVE

Ipk/Io = 5.0

Ipk/Io =

p

Ipk/Io = 10
Ipk/Io = 20

MMDFS2P102

8

Motorola TMOS Product Preview Data

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

Figure 22. Schottky Thermal Response

t, TIME (s)

Rthja(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE

1.0

0.1

D = 0.5

SINGLE PULSE

1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01

0.2

0.1

0.05

0.02

0.01

1.0E+02 1.0E+03

0.001

0.01

NORMALIZED TO R

q

JA

AT STEADY STATE (1″ PAD)

CHIP
JUNCTION

0.0031

W

0.0014 F

0.0154

W

0.0082 F

0.1521

W

0.1052 F

0.4575

W

2.7041 F

0.3719

W

158.64 F

AMBIENT

MMDFS2P102

9

Motorola TMOS Product Preview Data

TYPICAL APPLICATIONS

LOAD

V

out

C

O

+

–

V

in

+

–

LOAD

V

out

C

O

+

–

V

in

+

–

L

O

L

O

STEP DOWN SWITCHING REGULA T ORS

Buck Regulator

Synchronous Buck Regulator

LOAD

V

out

C

O

+

–

V

in

+

–

LOAD

V

out

C

O

+

–

V

in

+

–

STEP UP SWITCHING REGULATORS

Boost Regulator

Buck–Boost Regulator

L1

Q1

MMDFS2P102

10

Motorola TMOS Product Preview Data

TYPICAL APPLICATIONS

V

in

+

–

MUL TIPLE BATTERY CHARGERS

BATT #1

BATT #2

D2

D3

Q2

Q3

Buck Regulator/Charger

C

O

L

O

Q1

D1

Li–lon BA TTERY PACK APPLICATIONS

Battery Pack

DISCHARGE CHARGE

SMART IC

Li–Ion
BATTERY
CELLS

PACK +

PACK –

SCHOTTKY SCHOTTKY

Q1 Q2

• Applicable in battery packs which require a high current level.

• During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.

• During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.

• Under normal operation, both transistors are on.

MMDFS2P102

11

Motorola TMOS Product Preview Data

mm

inches

0.060

1.52

0.275

7.0

0.024

0.6

0.050

1.270

0.155

4.0

SO–8 FOOTPRINT

P ACKAGE DIMENSIONS

CASE 751–05

SO–08

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.

SEATING
PLANE

14

58

C

K

4X P

A0.25 (0.010)MTB

SS

0.25 (0.010)MB

M

8X D

R

M

J

X 45

_

_

F

–A–

–B–

–T–

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 4.80 5.00 0.189 0.196
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.18 0.25 0.007 0.009
K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019

____

G

MMDFS2P102

12

Motorola TMOS Product Preview Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

Mfax is a trademark of Motorola, Inc.

How to reach us:

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MMDFS2P102/D

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