Datasheet MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL, MMBZ10VAL Specification

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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Should be replaced with:

- © Nexperia B.V. (year). All rights reserved.

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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MMBZxAL series

Low capacitance unidirectional double ESD protection diodes

Rev. 02 — 10 December 2009 Product data sheet

1. Product profile

1.1 General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.

Table 1. Product overview

Type number Package Configuration

MMBZ5V6AL SOT23 TO-236AB dual common anode
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

NXP JEDEC

1.2 Features

 Unidirectional ESD protection of

two lines

 ESD protection up to 30 kV (contact

discharge)

 Bidirectional ESD protection of one line  IEC 61000-4-2; level 4 (ESD)
 Low diode capacitance: C
 Rated peak pulse power: P
 Ultra low leakage current: I

≤ 280 pF  IEC 61643-321

d

=40W  AEC-Q101 qualified

PPM

=5nA

RM

1.3 Applications

 Computers and peripherals  Automotive electronic control units
 Audio and video equipment  Portable electronics
 Cellular handsets and accessories

NXP Semiconductors

4

1.4 Quick reference data

Table 2. Quick reference data

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

RWM

C

d

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

=25°C unless otherwise specified.

reverse standoff voltage

MMBZ5V6AL - - 3 V
MMBZ6V2AL - - 3 V
MMBZ6V8AL - - 4.5 V
MMBZ9V1AL - - 6 V
MMBZ10VAL - - 6.5 V
MMBZ12VAL - - 8.5 V
MMBZ15VAL - - 12 V
MMBZ18VAL - - 14.5 V
MMBZ20VAL - - 17 V
MMBZ27VAL - - 22 V
MMBZ33VAL - - 26 V

diode capacitance f = 1MHz; VR=0V

MMBZ5V6AL - 210 280 pF
MMBZ6V2AL - 175 230 pF
MMBZ6V8AL - 150 200 pF
MMBZ9V1AL - 155 200 pF
MMBZ10VAL - 130 170 pF
MMBZ12VAL - 110 140 pF
MMBZ15VAL - 85 105 pF
MMBZ18VAL - 70 90 pF
MMBZ20VAL - 65 80 pF
MMBZ27VAL - 48 60 pF
MMBZ33VAL - 45 55 pF

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)
2 cathode (diode 2)
3 common anode

12

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 2 of 17

3

3

12

006aaa15

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number Package

MMBZ5V6AL - plastic surface-mounted package; 3 leads SOT23
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

Name Description Version

4. Marking

Table 5. Marking codes

Type number Marking code

MMBZ5V6AL RR*
MMBZ6V2AL RS*
MMBZ6V8AL RT*
MMBZ9V1AL RU*
MMBZ10VAL RV*
MMBZ12VAL *H1
MMBZ15VAL *H2
MMBZ18VAL *H3
MMBZ20VAL *H4
MMBZ27VAL *H5
MMBZ33VAL *H6

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 3 of 17

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

P

PPM

I

PPM

Per device

P

tot

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

rated peak pulse power tp= 10/1000 μs

MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

rated peak pulse current tp= 10/1000 μs

MMBZ5V6AL - 3 A
MMBZ6V2AL - 2.76 A
MMBZ6V8AL - 2.5 A
MMBZ9V1AL - 1.7 A
MMBZ10VAL - 1.7 A
MMBZ12VAL - 2.35 A
MMBZ15VAL - 1.9 A
MMBZ18VAL - 1.6 A
MMBZ20VAL - 1.4 A
MMBZ27VAL - 1 A
MMBZ33VAL - 0.87 A

total power dissipation T

amb

≤ 25 °C
MMBZxAL series
MMBZ5V6AL

MMBZ6V2AL
MMBZ6V8AL

MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

[1][2]

-24W

-40W

[1][2]

[3]

-265mW

[4]

-290mW

[4]

-360mW

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 4 of 17

NXP Semiconductors

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

Table 6. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

T

j

T

amb

T

stg

[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and

standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm

Table 7. ESD maximum ratings

T

=25°C unless otherwise specified.

amb

junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

2

Symbol Parameter Conditions Min Max Unit

Per diode

V

ESD

electrostatic discharge
voltage

IEC 61000-4-2
(contact discharge)

machine model

[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.

[1][2]

-30kV

[2]

-2kV

.

Table 8. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 8 kV

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 5 of 17

NXP Semiconductors

1

150

I

PP

(%)

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

I

006aab319

PP

100 %

90 %

001aaa63

100

50

0

100 % IPP; 10 μs

50 % IPP; 1000 μs

0 4.03.01.0 2.0

tp (ms)

Fig 1. 10/1000 μs pulse waveform according to

IEC 61643-321

10 %

tr = 0.7 ns to 1 ns

30 ns

60 ns

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 6 of 17

NXP Semiconductors

6. Thermal characteristics

Table 9. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

R

th(j-a)

R

th(j-sp)

thermal resistance from junction
to ambient

MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL

MMBZ6V8AL
MMBZ9V1AL

MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

thermal resistance from junction
to solder point

MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL

MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

in free air

[1]

- - 460 K/W

[2]

- - 420 K/W

[2]

- - 340 K/W

[3]

- - 150 K/W

--50K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
[3] Measured from pin 1 or 2 to pin 3.

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 7 of 17

.

NXP Semiconductors

7. Characteristics

Table 10. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

F

V

RWM

I

RM

V

BR

Low capacitance unidire ctional double ESD protection diodes

=25°C unless otherwise specified.

forward voltage IF=10mA --0.9V
reverse standoff voltage

MMBZ5V6AL - - 3 V
MMBZ6V2AL - - 3 V
MMBZ6V8AL - - 4.5 V
MMBZ9V1AL - - 6 V
MMBZ10VAL - - 6.5 V
MMBZ12VAL - - 8.5 V
MMBZ15VAL - - 12 V
MMBZ18VAL - - 14.5 V
MMBZ20VAL - - 17 V
MMBZ27VAL - - 22 V
MMBZ33VAL - - 26 V

reverse leakage current

MMBZ5V6AL V
MMBZ6V2AL V
MMBZ6V8AL V
MMBZ9V1AL V
MMBZ10VAL V
MMBZ12VAL V
MMBZ15VAL V
MMBZ18VAL V
MMBZ20VAL V
MMBZ27VAL V
MMBZ33VAL V

breakdown voltage

MMBZ5V6AL I
MMBZ6V2AL I
MMBZ6V8AL I
MMBZ9V1AL I
MMBZ10VAL I
MMBZ12VAL I
MMBZ15VAL I
MMBZ18VAL I
MMBZ20VAL I
MMBZ27VAL I
MMBZ33VAL I

MMBZxAL series

= 3 V - 0.24 5 μA

RWM

= 3 V - 5 200 nA

RWM

= 4.5 V - 10 300 nA

RWM

= 6 V - 5 100 nA

RWM

=6.5V - 1 20 nA

RWM

= 8.5 V - 0.1 5 nA

RWM

=12V - 0.1 5 nA

RWM

=14.5V - 0.1 5 nA

RWM

=17V - 0.1 5 nA

RWM

=22V - 0.1 5 nA

RWM

=26V - 0.1 5 nA

RWM

= 20 mA 5.32 5.6 5.88 V

R

= 1 mA 5.89 6.2 6.51 V

R

= 1 mA 6.46 6.8 7.14 V

R

= 1 mA 8.65 9.1 9.56 V

R

= 1 mA 9.5 10 10.5 V

R

= 1 mA 11.4 12 12.6 V

R

= 1 mA 14.25 15 15.75 V

R

= 1 mA 17.1 18 18.9 V

R

= 1 mA 19 20 21 V

R

= 1 mA 25.65 27 28.35 V

R

= 1 mA 31.35 33 34.65 V

R

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 8 of 17

NXP Semiconductors

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

Table 10. Characteristics

T

=25°C unless otherwise specified.

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

C

d

diode capacitance f = 1 MHz; VR=0V

MMBZ5V6AL - 210 280 pF
MMBZ6V2AL - 175 230 pF
MMBZ6V8AL - 150 200 pF
MMBZ9V1AL - 155 200 pF
MMBZ10VAL - 130 170 pF
MMBZ12VAL - 110 140 pF
MMBZ15VAL - 85 105 pF
MMBZ18VAL - 70 90 pF
MMBZ20VAL - 65 80 pF
MMBZ27VAL - 48 60 pF
MMBZ33VAL - 45 55 pF

V

CL

S

Z

clamping voltage

MMBZ5V6AL I
MMBZ6V2AL I
MMBZ6V8AL I
MMBZ9V1AL I
MMBZ10VAL I
MMBZ12VAL I
MMBZ15VAL I
MMBZ18VAL I
MMBZ20VAL I
MMBZ27VAL I
MMBZ33VAL I

temperature coefficient

MMBZ5V6AL I
MMBZ6V2AL I
MMBZ6V8AL I
MMBZ9V1AL I
MMBZ10VAL I
MMBZ12VAL I
MMBZ15VAL I
MMBZ18VAL I
MMBZ20VAL I
MMBZ27VAL I
MMBZ33VAL I

=3A --8V

PPM

= 2.76 A - - 8.7 V

PPM

= 2.5 A - - 9.6 V

PPM

=1.7A --14V

PPM

= 1.7 A - - 14.2 V

PPM

=2.35A --17V

PPM

=1.9A --21V

PPM

=1.6A --25V

PPM

=1.4A --28V

PPM

=1A --40V

PPM

=0.87A --46V

PPM

=20mA - 1.7 - mV/K

Z

=1mA -2.1-mV/K

Z

=1mA -3.2-mV/K

Z

=1mA -5.4-mV/K

Z

=1mA -6.5-mV/K

Z

=1mA -8.2-mV/K

Z

=1mA - 11 - mV/K

Z

=1mA - 14 - mV/K

Z

= 1 mA - 15.8 - mV/K

Z

=1mA - 23 - mV/K

Z

= 1 mA - 29.8 - mV/K

Z

[1][2]

[1] In accordance with IEC 61643-321(10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 9 of 17

NXP Semiconductors

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

006aab320

2

10

t

p

(ms)

3

10

P

PPM

(W)

3

10

2

10

10

1

−2

10

T

amb

−1

10

=25°C

101

unidirectional and bidirectional

Fig 3. Rated peak pulse power as a function of

exponential pulse duration (rectangular
waveform); typical values

006aab839

C

(pF)

250

d

200

006aab321

Tj (°C)

P

PPM

P

PPM(25°C)

1.2

0.8

0.4

0

0 20015050 100

Fig 4. Relative variation of rated peak pulse power as

a function of junction temperature; typical
values

006aab840

C

(pF)

150

d

100

150

(1)

100

(4)

50

0642

f=1MHz; T

amb

=25°C
(1) MMBZ5V6AL: unidirectional
(2) MMBZ5V6AL: bidirectional
(3) MMBZ6V8AL: unidirectional
(4) MMBZ6V8AL: bidirectional

(2)

(3)

VR (V)

(3)

(2)

50

0

015105

f=1MHz; T
(1) MMBZ10VAL: unidirectional
(2) MMBZ10VAL: bidirectional
(3) MMBZ15VAL: unidirectional
(4) MMBZ15VAL: bidirectional

(1)

(4)

(5)

(6)

VR (V)

amb

(2)

(3)

=25°C

(5) MMBZ27VAL: unidirectional
(6) MMBZ27VAL: bidirectional

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Fig 6. Diode capacitance as a function of reverse

voltage; typical values

Product data sheet Rev. 02 — 10 December 2009 10 of 17

NXP Semiconductors

4

25

L

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

006aab841

I

RM

(nA)

3

10

2

10

(1)

10

(2)

1

(3)

(4)

T

(°C)

amb

(1) MMBZ5V6AL: V
(2) MMBZ6V8AL: V
(3) MMBZ9V1AL: V
(4) MMBZ27VAL: V

RWM
RWM
RWM
RWM

=3V
=4.5V
=6V
=22V

−1

10

−2

10

−3

10

−4

10

−75 17575 125−25 25

Fig 7. Reverse leakage current as a function of ambient temperature; typical values

I

I

PPM

I

PP

006aab32

V

−VCL−VBR−V

RWM

I

R

I

RM

−I

RM

−I

R

−I

PP

−I

PPM

V

RWM

−

+

V

BR

006aab3

V

C

Fig 9. V-I characteristics for a bidirectional

ESD protection diode

−VCL−VBR−V

RWM

−I

RM

−I

R

−

+

P-N

−I

PP

−I

PPM

Fig 8. V-I characteristics for a unidirectional

ESD protection diode

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 11 of 17

NXP Semiconductors

2

8. Application information

The MMBZxAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and su rge pulses. The devices may be u sed
on lines where the signal polarities are either positive or negative with respect to ground.
The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide
a surge capability of 24 W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL,
MMBZ20V AL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40 W per line,
for a 10/1000 μs waveform.

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

line 1 to be protected

line 2 to be protected

MMBZxAL

GND

unidirectional protection

of two lines

Fig 10. Typical application: ESD and transient voltage protection of data lines

bidirectional protection

line 1 to be protected

MMBZxAL

GND

of one line

006aab84

Circuit board layout and protection device placeme nt

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommende d:

1. Place the MMBZxAL series as close to the input terminal or connector as possible.

2. The path length between the MMBZxAL series and the protected line should be
minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all PCB conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.

9. Test information

9.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 12 of 17

NXP Semiconductors

10. Package outline

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

Fig 11. Package outline SOT23 (TO-236AB)

11. Packing information

Table 11. Packing method s

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

MMBZ5V6AL SOT23 4 mm pitch, 8 mm tape and reel -215 -235
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL

2.5

2.1

3.0

2.8

3

0.45

0.15

1.4

1.2

12

0.48

1.9

0.38

1.1

0.9

0.15

0.09

[1]

04-11-04Dimensions in mm

3000 10000

[1] For further information and the availability of packing methods, see Section 15.

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 13 of 17

NXP Semiconductors

fr

fw

12. Soldering

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

3.3

2.9

1.9

solder lands

3

1.7

0.7

(3×)

0.5

(3×)

0.6

(3×)

1

0.6

(3×)

Fig 12. Reflow soldering footprint SOT23 (TO-236AB)

2.2

1.2

(2×)

1.4

(2×)

2

Dimensions in mm

solder resist

solder paste

occupied area

sot023_

solder lands

4.6

2.6

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

solder resist

occupied area

sot023_

Fig 13. Wave soldering footprint SOT23 (TO-236AB)

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 14 of 17

NXP Semiconductors

Low capacitance unidire ctional double ESD protection diodes

MMBZxAL series

13. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

MMBZXAL_SER_2 20091210 Product data sheet - MMBZXVAL_SER_1
Modifications:

MMBZXVAL_SER_1 20080901 Product data sheet - -

• Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and

MMBZ10VAL added

• Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG,

MMBZ27VAL/DG, MMBZ33VAL/DG removed

• Figure 5 and 7: updated

• Figure 6: added

• Figure 10: updated

• Section 14 “Legal information”: updated

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 15 of 17

NXP Semiconductors

MMBZxAL series

Low capacitance unidire ctional double ESD protection diodes

14. Legal information

14.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document m ay have change d since this document was p ublished and may dif fer in case of multiple devices. The latest product st atus

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

14.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

14.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC60134) may cause permane nt
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.

, including those pertaining to warranty,

14.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

15. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 10 December 2009 16 of 17

NXP Semiconductors

Low capacitance unidire ctional double ESD protection diodes

16. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 7

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Application information. . . . . . . . . . . . . . . . . . 12

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 12

9.1 Quality information . . . . . . . . . . . . . . . . . . . . . 12

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

11 Packing information . . . . . . . . . . . . . . . . . . . . 13

12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

15 Contact information. . . . . . . . . . . . . . . . . . . . . 16

16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

MMBZxAL series

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 10 December 2009

Document identifier: MMBZXAL_SER_2