Datasheet mmbth10w Datasheet

MMBTH10W

VHF/UHF Transistors

P b

Lead(Pb)-Free

FEATURES:

1

BASE

COLLECTOR

3

2

EMITTER

3

1

2

SOT-323(SC-70)

* We declare that the material of product compliance with RoHS requirements.

Maximum Ratings (T

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous 50 mA

=25°C Unlesso therwise noted)

A

Symbol

V

CEO

V

CBO

V

EBO

I

C

Value

25

30

3.0

Unit

V

Thermal Characteristics

Characteristics

Total Device Dissipation FR-5 Board (Note.1) TA=25°C Derate above 25°C

Thermal Resistance, Junctionto Ambient

Total Device Dissipation Alumina Substrate, (2) TA=25°C Derate above 25°C

Thermal Resistance, Junctionto Ambient 417 °C/W

Junction Temperature Range

Storage Temperature Range

Symbol

D

R

θJA

D

R

θJA

T

J

Tstg

Max

225

1.8

556

300

2.4

-55 to +150

Unit

mW/°C

°C/W

mW/°C

Device Marking

MMBTH10W=3E

1. FR-5=1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

mWP

°C

W E I T RO N

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MMBTH10W

WEITRON

Electrical Characteristics (T

Characteristics Symbol Min Typ Max Unit

Off Characteristics

Collector-Emitter Breakdown Voltage (IC=1.0mA, IB=0)

Collector-Base Breakdown Voltage (IC=100µA, IE=0)

Emitter-Base Breakdown Voltage

=10µA, IC=0)

(I

E

Collector Cutoff Current

=25V, IE=0)

(V

CB

Emitter Cutoff Current (V

=3V, IC=0)

EB

On Characteristics

DC Current Gain

=4.0mA, VCE=10V)

(I

C

Collector-Emitter Saturation Voltage (IC=4.0mA, IB=0.4mA)

Base-Emitter On Voltage (IC=4.0mA,VCE=10V)

=25°C Unless Otherwise noted)

A

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(sat)

V

BE(on)

25

30

3.0

-

- -

FE

60

-

--

-- 0.95

-

100

270

0.5

V

nA

V

Small-Signal Characteristics

Current-Gain-Bandwidth Product (VCE = 10 Vdc, IC = 4.0mAdc, f = 100MHz)

Collector –Base Capacitance (VCB = 10 Vdc, I E = 0, f = 1.0 MHz)

Collector –Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Collector Base Time Constant ( IC = 4.0mAdc,VCB=10 Vdc, f = 31.8 MHz)

f

T

C

cb

C

rb

rb’ C c

650

- 0.7

-

- -

0.65

-

9.0

MHz

-

pF

ps

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TYPICAL CHARACTERISTICS

COMMON–BASE y PARAMETERS versus FREQUENCY

(V

= 10 Vdc, I C = 4.0 mAdc, T A= 25°C)

CB

yib , INPUT ADMITTANCE

WEITRON

80

70

60

50

40

30

20

, INPUT ADMITTANCE(mmhos)y

ib

10

y

0

100 200 300 400 500 700 1000

g

ib

–b

ib

f, FREQUENCY (MHz)

Figure 1. Rectangular Form

y fb , FORWARD TRANSFER ADMITTANCE

70

b

60 50 40

–g

30 20 10

0 –10 –20

, FORWARD TRANSFER ADMITTANCE (mmhos)

ib

–30

100 200 300 400 500 700 1000

fb

0

–10

–20

1000MHz

–30

(mmhos)

ib

jb

–40

–50

–60

0 10 20 30 40 50 60 70 80

700

400

200

gib(mmhos)

Figure 2. Polar Form

60

200

50

100

40

30

(mmhos)

fb

jb

20

10

70 60 50 40 30 20 10 0 10 20 30

400

600

700

100

1000MHz

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f, FREQUENCY (MHz)

Figure 3. Rectangular Form

gfb(mmhos)

Figure 4. Polar Form

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MMBTH10W

TYPICAL CHARACTERISTICS

COMMON–BASE y PARAMETERS versus FREQUENCY

= 10 Vdc, I C = 4.0 mAdc, T A = 25°C)

(V

CB

y

, REVERSE TRANSFER ADMITTANCE

rb

WEITRON

5.0

4.0

3.0

2.0

1.0

0

100 200 300 400 500 700 1000

, REVERSE TRANSFER ADMITTANCE (mmhos)

rb

y

f, FREQUENCY (MHz)

–b

MPS H11

rb

MPS H1

–g

rb

Figure 5. Rectangular Form

10

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

, OUTPUT ADMITTANCE (mmhos)

ob

0

y

100 200 300 400 500 700 1000

b

ob

g

ob

f , FREQUENCY (MHz)

Figure 7. Rectangular Form

0

–1.0

–2.0

(mmhos)

–b

rb

–3.0

rb

jb

–4.0

–5.0

2.0 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0

y

, OUTPUT ADMITTANCE

ob

10

8.0

6.0

(mmhos)

ob

4.0

jb

2.0

0

0 2.0 4.0 6.0 8.0 10

g

Figure 6. Polar Form

1000MHz

700

400

200

100

Figure 8. Polar Form

(mmhos)

rb

g

ob

100

200

400

700

1000MHz

(mmhos)

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MMBTH10W

Unit:mm

SOT-323 Outline Demensions

A

B

D

E

G

M

L

H

J

TOP VIEW

K

C

Dim

A B C D E G H

J K L

M

Min

0.30

1.15

2.00

-

0.30

1.20

1.80

0.00

0.80

0.42

0.10

Max

0.40

1.35

2.40

0.65

0.40

1.40

2.20

0.10

1.00

0.53

0.25

SOT-323

WEITRON

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