
MMBTH10RG
NPN RF Transistor
• This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100 µA to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
• Sourced from process 42.
C
E
SOT-23
B
Mark: 3E
1. Base 2. Emitter 3. Collector
MMBTH10RG
Absolute Maximum Ratings*
Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 4.0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Sustaining Voltage * IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
Emitter-Base Breakdown Voltage IE = 1.0 µA, IC = 0 4.0 V
Collector Cutoff Current VCB = 30 V, IE = 0 100 nA
On Characteristics
h
FE
V
CE(sat)
DC Current Gain IC = 1.0 mA, VCE = 6.0 V 50 120 V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 5.0 mA 0.2 V
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product IC = 2.0 mA, VCE = 10 V,
450 MHz
f = 100 MHz
C
cb
rb’Cc Collector Base Time Constant I
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.6 pF
= 5.0 mA, VCB = 10 V,
C
f = 79.8 MHz
12 pS
Thermal Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
R
θJA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
Thermal Resistance, Junction to Ambient 556 °C/W
225
1.8
mW
mW/°C

Package Dimensions
0.40
±0.03
MMBTH10RG
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
Rev. A, April 2004©2004 Fairchild Semiconductor Corporation

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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production T his datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2004 Fairchild Semiconductor Corporation Rev. I10
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.