Datasheet mmbth10_mpsh10 Datasheet

Page 1
MPSH10 MMBTH10
C
MPSH10 / MMBTH10
C
E
B
TO-92
SOT-23
Mark: 3E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
E
CEO
CBO
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emit t er Vol t age 25 V Collector-Base Voltage 30 V Emitter-Base Voltage 3.0 V Collector Current - Continuous 50 mA Operating and Stora ge Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH10 *MMBTH10
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Ther mal Resistance , Junction to Case 125 Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
Page 2
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
sat
CE(
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
rb
rb’C
c
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
30 V
3.0 V Collector Cu t off Current VCB = 25 V, IE = 0 100 nA Emitter Cutoff Current VEB = 2.0 V, I
= 0 100 nA
C
DC Current Gain IC = 4.0 mA, VCE = 10 V 60 Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 0.5 V
)
Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V
Current Gain - Bandwidth Product IC = 4.0 mA, VCE = 10 V,
650 MHz
f = 100 MHz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.35 0.65 pF
Collector Base Time Consta n t IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz
9.0 pS
MPSH10 / MMBTH10
3
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Page 3
T ypical Characteristics
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Typical Pulsed Current Gain
vs Colle ct or Current
100
V = 5V
CE
80
60
40
20
0
FE
0.1 0.2 0.5 1 2 5 10 20 50
h - TYPICAL PULSED CURRENT GAIN
125 °C
25 °C
- 40 °C
I - COLLECTOR CURRENT (mA)
C
Base-Emitter Satu ration
Voltage vs Co llector Current
1
β
0.9
0.8
0.7
0.6
0.5
0.4
BESAT
0.3
V - BASE-EMITTER VOLTA GE (V)
= 10
- 40 °C 25 °C
125 °C
0.1 1 10 20
I - COLLECTOR CURRENT (mA)
C
Collecto r-Em itt er Satu r atio n
V oltage vs Collector Current
0.2
= 10
β
0.15
0.1
V - CO LLECTOR-EMITTER VOLTAG E (V)
0.05
CES AT
- 40 °C
0.1 1 10 20
I - COLLE CTOR CU RRENT (m A)
25 °C
C
125 °C
Base-Emitter ON Voltage v s
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
0.01 0.1 1 10 100
BE(ON)
V - BASE-EMIT TER ON VO LTAGE (V)
- 40 °C
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Collector-Cutoff Current vs Ambient Temperature
10
V = 30V
CB
1
CBO
I - COLL E CTOR CURRENT (nA)
0.1 25 50 75 100 125 150
T - AMBIENT TEMPERA TURE ( C)
A
°
Power Dissipation vs
Ambient Temperature
350 300
SOT-23
250 200 150 100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
TO-92
o
Page 4
Common Base Y Parameters vs. Frequency
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Input Admittance
120
80
40
V = 10V
CE
I = 5 mA
C
0
-40
b
-80
ib
Y - INPUT ADMITTANCE (mmhos)
-120 100 200 500 1000
ib
f - FREQUENCY (MHz)
g
ib
Forward Transfer Admittance
120
b
80
40
0
-40
-80
fb
-120
Y - FORWARD ADMITTANCE (mmhos)
100 200 500 1000
fb
g
fb
f - FREQUENCY (MH z)
V = 10V
CE
I = 5 mA
C
Output Admittance
12
V = 10V
CE
10
I = 5 mA
C
8
6
4
2
ob
0
Y - OUTPUT ADMITTANCE (mmhos)
100 200 500 1000
f - FREQUENCY (MHz)
b
ob
g
ob
Reverse Transfer Admittance
8
V = 10V
CE
I = 5 mA
C
6
4
-b
rb
2
-g
rb
0
Y - REVERSE ADMITTANCE (mmhos)
100 200 500 1000
f - FREQUENCY (MHz)
rb
3
Page 5
Common Emitter Y Parameters vs. Frequency
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Input Admittance
24
V = 10V
CE
20
I = 2 mA
C
16
12
8
4
ie
Y - INPUT ADMITTANCE (mmhos)
0
100 200 500 1000
f - FREQUENCY (MHz)
g
ie
b
ie
Forward Transfer Admittance
60
40
20
-20
g
fe
0
V = 10V
CE
I = 2 mA
C
Output Admittance
6
V = 10V
CE
5
I = 2 mA
C
4
b
3
2
1
oe
0
Y - OUTPUT ADMITTANCE (mmhos)
100 200 500 1000
f - FREQUENCY (MHz)
oe
g
oe
Reverse Transfer Admittance
1.2
V = 10V
CE
1
I = 2 mA
C
0.8
0.6
0.4
-b
re
-40
fe
-60
Y - FORWARD ADMITTANCE (mmhos)
100 200 500 1000
b
fe
f - FREQUENCY (MHz)
0.2
0
re
Y - REVERSE ADMITTANCE (mmhos)
100 200 500 1000
-g
re
f - FREQUENCY (MHz)
Page 6
T est Circuits
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Input 50
ΩΩ
2.0 K
Ω 10 K
ΩΩ
1000 pF
T1
1000 pF
ΩΩ
Ω
ΩΩ
L1
1000 pF
V
BB
5.0-18 pF
0.8-10 pF
2.0 pF
ΩΩ
Ω
ΩΩ
L2
TUM
1000 pF
680
V
= 12 V
CC
1000 pF
100 pF
0.8-10 pF
L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side
ΩΩ
Ω
ΩΩ
T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire
3
FIGURE 1: Neutralized 200 MHz PG and NF Circuit
50 pF
(NOTE 2)
RFC
1000 pF
ΩΩ
2.2 K
Ω
ΩΩ
- V
ee
(NOTE 1)
V
CC
175 pF
1000 pF
RFC
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
FIGURE 2: 500 MHz Oscillator Circuit
500 mHz Output
ΩΩ
into 50
Ω
ΩΩ
Page 7
TO-92 Tape and Reel Data
TO-92 Packaging Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
Unit w eight = 0.22 gm Reel weight with components = 1 .0 4 kg Amm o weight with components = 1.02 kg Max q uantity per inte rme d iate box = 10,000 units
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
L34Z
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP TO-92 STANDARD
STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98
NO LEADCLIP
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
2.0 K / BOX
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
5 Reels per
Intermediate Box
F63TNR Label
Customized Label
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR Label
BULK OPTION
See Bulk Packing Information table
FSCINT Label
2000 units per EO70 box for
std option
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
114mm x 102mm x 51mm
FSCINT Label
Customized Label
FSCINT Label
Customized Label
Immediate Box
FSCINT Label
©2001 Fairchild Semiconductor Corporation
530mm x 130mm x 83mm
Intermediate box
ustomized
C Label
10,000 units maximum
per intermediate box
for std option
5 EO70 boxes per intermediate Box
March 2001, Rev. B1
Page 8
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style Configuration: Figure 2.0
Machine Option “A” (H)
Style “A”, D26Z, D70Z (s/h )
TO-92 Radial Ammo Packaging Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
Machine Option “E” (J)
Style “E”, D27 Z, D71 Z (s/ h)
FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
Page 9
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0
P Pd
Ha
H1
HO
P1 F1
User Direc tion of Feed
TO-92 Reel Configuration: Figure 5.0
Hd
b
d
L1
P2
PO
DO
S
L
W1
WO
ITEM DESCRIPTION
Base of Package to Lead Bend Compon en t He ig ht Lead Clinch Height Compon en t Ba s e Heig ht Compon en t Al ig nm e nt ( sid e/s id e ) Compon en t Al ig nm e nt ( fron t /b ac k ) Compon en t Pi tc h Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickn es s Carrier Tape Thickness Carrier Tape Widt h Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out
t
W2
W
t1
SYMBOL
b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S
DIMENSION
0.098 (m ax )
0.928 (+ /- 0.025)
0.630 (+ /- 0.020)
0.748 (+ /- 0.020)
0.040 (m ax )
0.031 (m ax )
0.500 (+ /- 0.020)
0.500 (+ /- 0.008)
0.150 (+ 0 .00 9, -0.010 )
0.247 (+ /- 0.007)
0.104 (+ /- 0 .010)
0.018 (+ 0 .00 2, -0.003 )
0.429 (m ax )
0.209 (+ 0 .05 1, -0.052 )
0.032 (+ /- 0.006)
0.021 (+ /- 0.006)
0.708 (+ 0 .02 0, -0.019 )
0.236 (+ /- 0.012)
0.035 (m ax )
0.360 (+ /- 0.025)
0.157 (+ 0 .00 8, -0.007 )
0.004 (m ax )
F63TNR Label
Customized Label
W2
ELECTROSTATIC
SENSITIVE DEVICES
D3
Note : All dimensions are in inches.
D4
D1
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
D2
W1
W3
Reel Diame t er D1 13.9 75 14.025 Arbor Hol e Di am et er ( Standard) D2 1.16 0 1.200
Core Diameter D3 3.100 3.300 Hub Reces s Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 1.690 Hub to Hub Center Width W3 2.090
Note: All dimensions are inches
(Small Hole) D2 0.650 0.700
July 1999, Rev. A
Page 10
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
January 2000, Rev. B
Page 11
SOT-23 Packaging Configu ration: Figur e 1.0
Components
Leader Tape 500mm minimum or
125 empty pockets
Trailer Tape 300mm minimum or
75 empty pocket s
SOT-23 Tape Leader and Trailer
Configuration: Figur e 2.0
Cover Tape
Carrier Tape
Note /Comments
Packaging Option
SOT-23 Packaging Information
Stan dard
(no flow code)
D87Z
Packaging type
Reel Size
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag
3,000 10,000
Box Dimension (m m )
187x107x183 343x343x64
Max qty per B o x
24,000 30,000
Weight per unit (gm)
0.0082 0.0082
Weight per Reel (kg)
0.1175 0.4006
Human readable Label
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human R eadable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23 made from a dissipative (carbon filled) polyc arbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 uni ts per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table.
These full reels are individually labeled and placed inside a standard inter mediate made of recyclable corrugat ed brown paper with a Fairchil d logo printi ng. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a label ed shipping box which comes i n diff erent si zes depending on the number of parts shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
©2000 Fairchild Semiconductor International
September 1999, Rev. C
Page 12
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape Confi guration: Figure 3.0
T
B0
Wc
D0P0 P2
D1
E1
W
F
E2
Tc
K0
P1
A0
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-23
(8mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
SOT-23 Reel Configuration: Figure 4.0
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
3.15
2.77
8.0
1.55
1.125
1.75
6.25
+/-0.10
+/-0.10
+/-0.3
+/-0.05
+/-0.125
+/-0.10
3.50
min
+/-0.05
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
B0
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
W1 Measured at Hub
A0
Sketch B (Top View)
Component Rotation
4.0 +/-0.1
Typical component cavity center line
Typical component center line
Dim A
Max
4.0 +/-0.1
1.30
0.228 +/-0.013
5.2 +/-0.3
0.5mm maximum
+/-0.10
0.5mm maximum
Sketch C (Top View)
Component lateral movement
0.06 +/-0.02
Dim A
max
Tape Size
8mm 7" Dia
8mm 13" Dia
Reel
Option
Dim N
Diameter Option
7"
See detail AA
B Min
Dim C
13" Diameter Option
See detail AA
W2 max Measured at Hub
W3
Dim D
min
DETAIL AA
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
7.00
0.059
177.8
13.00 330
1.5
0.059
1.5
512 +0.020/-0.008 13 +0.5/-0.2
512 +0.020/-0.008 13 +0.5/-0.2
0.795
2.165550.331 +0.059/-0.000
20.2
0.795
4.00
20.2
100
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
September 1999, Rev. C
Page 13
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
September 1998, Rev . A1
Page 14
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS EnSigna
TM
TM
FACT™ FACT Quiet Series™
FAST
FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ P ACMAN™ POP™
PowerTrench
QFET™ QS™ QT Optoelectronics™
Quiet Series™ SILENT SWITCHER SMART ST ART™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ UHC™ VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G
Loading...