Page 1
Discrete POWER & Signal
Technologies
MPSH10 MMBTH10
C
MPSH10 / MMBTH10
C
E
B
TO-92
SOT-23
Mark: 3E
E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 25 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 3. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH10 *MMBTH10
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
°C/W
Page 2
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
rb
rb’C
c
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 m A, IB = 0 25 V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
3.0 V
Colle c tor Cu tof f Cu r ren t VCB = 25 V, IE = 0 100 nA
Emit ter Cutoff C u rre nt VEB = 2.0 V, I
= 0 100 nA
C
DC Cu r re n t Ga in IC = 4.0 m A, VCE = 10 V 60
Collector-Emitter Saturation Voltage IC = 4.0 m A, IB = 0.4 mA 0.5 V
)
Base-Emitter On Voltage IC = 4.0 m A, VCE = 10 V 0.95 V
Current Gain - Bandwidth Product IC = 4.0 m A, VCE = 10 V,
650 MHz
f = 10 0 M Hz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.35 0.65 pF
Collector Base Time Constant IC = 4.0 m A, VCB = 10 V,
f = 31.8 MHz
9.0 pS
MPSH10 / MMBTH10
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Page 3
Typical Characteristics
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Typical Pulsed Current Gain
vs Collector Current
100
Vce = 5V
80
60
40
20
FE
h - TYPICAL PULSED CURRENT GAIN
125 ° C
25 °C
- 40 °C
0
0.1 0.2 0.5 1 2 5 10 20 50
I - COLLECTOR CURRENT (mA)
C
Base-Emitter Saturation
Voltage vs Collector Curre nt
1
ββ
= 10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
BESAT
V - BASE-EMITTE R VOL TA GE (V)
0.1 1 10 20
- 40 °C
25 °C
125 °C
I - COLL ECT O R CURREN T (mA )
C
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
ββ
= 10
125 °C
25 °C
- 40 °C
0.1 1 10 20
I - COLLEC T O R CURRENT (mA)
C
V - COLLECTOR-EMITTER VOLTAGE (V)
0.15
0.1
0.05
CESAT
Base-Emitter ON Voltage vs
Collector Cur rent
1
V = 5V
CE
0.8
0.6
0.4
0.2
0.01 0.1 1 10 100
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Collec to r -C ut o ff C ur re n t
vs Amb ient Temp eratu re
10
V = 30V
CB
1
CBO
0.1
I - COLLEC TOR CU RREN T (n A)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
Power Dissipation vs
Ambient Temperature
350
300
SOT-23
250
200
150
100
50
D
P - POWER DISSIPAT I ON (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
TO-92
o
Page 4
Common Base Y Parameters vs. Frequency
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
In put Admittance
120
80
V = 10V
40
CE
I = 5 mA
C
0
-40
b
-80
ib
Y - INPUT ADMITTANCE (mmhos)
-120
100 200 500 1000
ib
f - FREQUENCY (MHz)
g
ib
Forward Tran sfer Admittance
120
80
40
0
-40
-80
fb
-120
Y - FORWARD ADMITTANCE (mmhos)
100 200 500 1000
b
fb
g
fb
f - FREQUENCY (MHz)
V = 10V
CE
I = 5 mA
C
Ou tp ut Admi ttance
12
V = 10V
CE
10
I = 5 mA
C
8
6
4
2
ob
0
Y - OUTPUT ADMITTANCE (mmhos)
100 200 500 1000
f - FREQUENCY (MHz)
b
ob
g
ob
Reverse Transfer Admittance
8
V = 10V
CE
I = 5 mA
C
6
4
-b
rb
2
-g
rb
0
Y - REVERSE ADMITTANCE (mmhos)
100 200 500 1000
f - FREQUENCY (MHz)
rb
Page 5
Common Emitter Y Parameters vs. Frequency
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Input Adm itta nce
24
V = 10V
CE
20
I = 2 mA
C
16
12
8
4
ie
Y - INPUT ADMITTANCE (mmhos)
0
100 200 500 1000
f - FREQUENCY (MHz)
g
ie
b
ie
Forward Transfer Admitt ance
60
40
20
-20
g
fe
0
V = 10V
CE
I = 2 mA
C
Output Admittance
6
V = 10V
CE
5
I = 2 mA
C
4
3
2
1
oe
0
Y - OUTPUT ADMITTANCE (mmhos)
100 200 500 1000
f - FREQUENCY (MHz)
b
oe
g
oe
Reverse Transfer Admi ttance
1.2
V = 10V
CE
1
I = 2 mA
C
0.8
0.6
0.4
-b
re
-40
fe
-60
Y - FORWARD ADMITTANCE (mmhos)
100 200 500 1000
b
fe
f - FREQUENCY (MHz)
0.2
re
0
Y - REVERSE ADMITTANCE (mmhos)
100 200 500 1000
-g
re
f - FREQUENCY (MHz)
Page 6
Test Circuits
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Input
50
ΩΩ
2.0 K
Ω 10 K
ΩΩ
1000 pF
T1
1000 pF
ΩΩ
Ω
ΩΩ
L1
1000 pF
5.0-18 pF
0.8-10 pF
2.0 pF
ΩΩ
Ω
ΩΩ
TUM
1000 pF
680
V
CC
1000 pF
100 pF
L2
0.8-10 pF
ΩΩ
Ω
ΩΩ
FIGURE 1: Neutralized 200 MHz pF and NF Circuit
= 12 V
L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
T1 - Pri. 1 turn No. 16 wire
Sec. 1 turn No. 18 wire
50 pF
(NOTE 2)
RFC
ΩΩ
2.2 K
Ω
ΩΩ
- V
CC
(NOTE 1)
RFC
V
CC
175 pF
1000 pF1000 pF
500 mHz Output
ΩΩ
into 50
Ω
ΩΩ
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
FIGURE 2: 500 MHz Oscillator Circuit
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