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Elektronische Bauelemente
FEATURES
n
RoHS Compliant Product
n
Power dissipation & Collector current
n
Pcm: 0.2W Icm: -0.3A
n
High voltage V(BR): -300V
2. Base
1.Emitter
3. Collector
D
A
Top View
GV
MMBTA92W
PNP Silicon
General Purpose Transistor
SOT-323
L
S
B
C
H
K
J
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICSčTamb=25
unless otherwise specified
¥
Ď
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
H
DC current gain
H
H
(BR)CBO
(BR)CEO
(BR)EBOIE
CBO
EBO
FE（1
FE（2
FE（3
Ic= -100uA，IE=0 -300 V
Ic= -1 m A，IB=0
-300 V
=-100XA，IC=0 -5 V
VCB=-200 V , IE=0 -0.25
VEB=-5V, IC=0 -0.1
VCE= -10V, IC=-1mA 60
）
VCE= -10V, IC=-10mA 100 200
）
VCE=-10V, IC=-30mA 60
）
Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB= -2m A -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB=-2mA -0.9 V
VCE=-20V, IC=-10mA
Transition frequency f
T
50 MHz
f=30MHz
μ
μ
A
A
DEVICE MARKING
MMBTA92W=K3R
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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Elektronische Bauelemente
MMBTA92W
PNP Silicon
General Purpose Transistor
MMBTA92W
300
250
200
150
, DC CURRENT GAIN
100
FE
h
50
0
0.1 1.0
100
10
Ccb @ 1MHz
Cib @ 1MHz
TJ = +125°C
25°C
−55°C
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
150
130
110
90
VCE = 10 Vdc
10
100
1.0
C, CAPACITANCE (pF)
0.1
0.1
1.4
1.2
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
0.4
0.2
0.0
1.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
100
1000
100100.1 1.0
70
50
30
T
f, CURRENT−GAIN BANDWIDTH (MHz)
10
3579
1
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
V
@ 25°C, IC/IB = 10
CE(sat)
V
@ 125°C, IC/IB = 10
CE(sat)
V
@ −55°C, IC/IB = 10
CE(sat)
V
@ 25°C, IC/IB = 10
BE(sat)
V
@ 125°C, IC/IB = 10
BE(sat)
V
@ −55°C, IC/IB = 10
BE(sat)
V
@ 25°C, VCE = 10 V
BE(on)
V
@ 125°C, VCE = 10 V
BE(on)
V
@ −55°C, VCE = 10 V
BE(on)
= 25°C
T
J
V
= 20 Vdc
CE
F = 20 MHz
21
1917151311
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Figure 4. “ON” Voltages
Any changing of specification will not be informed individual
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