Datasheet mmbta70lt1-d Datasheet

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Page 1

MMBTA70LT1G

General Purpose Transistor

PNP Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

CEO

EBO

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR-5 Board,

(Note 1) TA = 25°C Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.



stg

−40 Vdc

−4.0 Vdc

−100 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

−55 to +150 °C

mW/°C

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COLLECTOR

BASE

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

MARKING DIAGRAM

M2C M G

August, 2009 − Rev. 3

M2C = Specific Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

MMBTA70LT1G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

3,000 / Tape & Reel

MMBTA70LT1/D

†

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MMBTA70LT1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

Emitter−Base Breakdown Voltage

(IE = −100 Adc, IC = 0)

Collector Cutoff Current

= −30 Vdc, IE = 0)

ON CHARACTERISTICS

DC Current Gain

= −5.0 mAdc, VCE = −10 Vdc)

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

= −5.0 mAdc, VCE = −10 Vdc, f = 100 MHz)

Output Capacitanc

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

7.0

5.0

IC = 10 A

30 A

3.0

, NOISE VOLTAGE (nV)

2.0

1.0 mA

100 A

300 A

1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

RS ≈ 0

Symbol Min Max Unit

(BR)CEO

(BR)EBO

CBO

CE(sat)

obo

−40 −

−4.0 −

− −100

40 400

− −0.25

125 −

− 4.0

1.0

7.0

5.0

3.0

IC = 1.0 mA

BANDWIDTH = 1.0 Hz

RS ≈∞

2.0

300 A

100 A

30 A

10 A

, NOISE CURRENT (pA)

1.0

0.7

0.5

0.3

0.2

0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

f, FREQUENCY (Hz)

Vdc

nAdc

−

Vdc

MHz

Figure 1. Noise Voltage

Figure 2. Noise Current

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MMBTA70LT1G

NOISE FIGURE CONTOURS

(VCE = − 5.0 Vdc, TA = 25°C)

1.0M 500k

200k 100k

50k

20k 10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

500

200 100

1.0M 500k

200k 100k

50k

20k 10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

500

200

100

BANDWIDTH = 1.0 Hz

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

IC, COLLECTOR CURRENT (A)

Figure 3. Narrow Band, 100 Hz

10 Hz to 15.7 kHz

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

20 30 50 70 100 200 300 500 700 1.0k

IC, COLLECTOR CURRENT (A)

1.0M 500k

200k

100k

50k

20k 10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

500

200

100

0.5 dB

IC, COLLECTOR CURRENT (A)

BANDWIDTH = 1.0 Hz

1.0 dB

2.0 dB

3.0 dB

Figure 4. Narrow Band, 1.0 kHz

Noise Figure is Defined as:

) 4KTRS) I

NF + 20 log

= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

4KTR

1ń2

−23

j/°K)

5.0 dB

Figure 5. Wideband

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MMBTA70LT1G

TYPICAL STATIC CHARACTERISTICS

400

200

100

h , DC CURRENT GAIN

1.0

0.8

0.6

0.4

0.003

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0

IC, COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

50 mA

TJ = 125°C

25°C

-55°C

2.0

100

TA = 25°C

PULSE WIDTH = 300 s

DUTY CYCLE ≤ 2.0%

VCE = 1.0 V V

300 A

= 10 V

3.0

5.0 7.0 10 20 30 50 70 100

IB = 400 A

350 A

250 A

200 A

150 A

100 A

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.002

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.4

TJ = 25°C

1.2

1.0

0.8

0.6

V, VOLTAGE (VOLTS)

0.4

0.2

0.1 0.2 0.5

IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

@ IC/IB = 10

BE(sat)

@ VCE = 1.0 V

BE(on)

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20 50

IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages

100

, COLLECTOR CURRENT (mA)

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Characteristics

1.6 *APPLIES for IC/IB ≤ hFE/2

0.8

*VC for V

0.8

1.6

VB for V

2.4

Figure 10. Temperature Coefficients

CE(sat)

1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5

IC, COLLECTOR CURRENT (mA)

50 A

25°C to 125°C

-55°C to 25°C

25°C to 125°C

-55°C to 25°C

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MMBTA70LT1G

TYPICAL DYNAMIC CHARACTERISTICS

t, TIME (ns)

500

300

200

100

7.0

5.0

500

300

200

70 50

td @ V

2.0 5.0 10

3.01.0

IC, COLLECTOR CURRENT (mA)

Figure 11. Turn−On Time

TJ = 25°C

VCE = 20 V

VCC = 3.0 V I

= 10

C/IB

= 25°C

= 0.5 V

BE(off)

7.0 70 100

20 30 50

5.0 V

1000

t, TIME (ns)

700 500

300

200

100

7.0

5.0

3.0

VCC = - 3.0 V

= 10

C/IB

IB1 = I

TJ = 25°C

70 50

-1.0

- 2.0

- 3.0

- 5.0 - 7.0

-10

- 20

- 30

- 50 - 70

-100

IC, COLLECTOR CURRENT (mA)

Figure 12. Turn−Off Time

TJ = 25°C

100

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

0.5

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

IC, COLLECTOR CURRENT (mA)

Figure 13. Current−Gain — Bandwidth Product

7.0

5.0

3.0

2.0

1.0

, INPUT IMPEDANCE (k )Ω

0.7

0.5

0.3

0.2

0.1 0.2 0.5

1.0

IC, COLLECTOR CURRENT (mA)

hfe ≈ 200

@ IC = -1.0 mA

2.0 5.0 10

VCE = -10 Vdc f = 1.0 kHz TA = 25°C

20 50

100

2.0

C, CAPACITANCE (pF)

1.0

200

VCE = 10 Vdc f = 1.0 kHz

100

TA = 25°C



@ IC = 1.0 mA

7.0

5.0

h , OUTPUT ADMITTANCE ( mhos)

3.0

2.0

0.1 0.2 0.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

hfe ≈ 200

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Capacitance

2.0 5.0 10

1.0

IC, COLLECTOR CURRENT (mA)

20 50

100

Figure 15. Input Impedance

Figure 16. Output Admittance

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1.0

0.7

0.5

MMBTA70LT1G

D = 0.5

0.3

0.2

0.1

0.07

0.05

(NORMALIZED)

0.03

0.02

0.01

0.2

0.1

0.05

0.02

SINGLE PULSE

r(t) TRANSIENT THERMAL RESISTANCE

0.01

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k

VCC = 30 V

CEO

CEX

, COLLECTOR CURRENT (nA)

-1

-2

-4

-200 + 20 +40 + 60 +80 + 100 + 120 + 140 +160

TJ, JUNCTION TEMPERATURE (°C)

Figure 19. Typical Collector Leakage Current

@ V

t, TIME (ms)

Figure 17. Thermal Response

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model as shown in Figure 18. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles.

CBO

AND

BE(off)

= 3.0 V

To find Z by the steady state value R Example: Dissipating 2.0 watts peak under the following conditions:

Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore

T = r(t) x P For more information, see AN−569.

Figure 18.

(pk)

, multiply the value obtained from Figure 17

JA(t)

DUTY CYCLE, D = t1/t D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) Z

= r(t) • R

JA



JA(t)

− TA = P

J(pk)

(pk)



t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

(pk)

x R

= 0.22 x 2.0 x 200 = 88°C.

JA



JA(t)

100k

50k

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MMBTA70LT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

SEE VIEW C

0.25

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003

D 2.80 2.90 3.04 0.110

E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

2.0

0.079

0.9

0.035

SCALE 10:1

0.8

inches

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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MMBTA70LT1/D