Page 1
Elektronische Bauelemente
FEATURES
Plastic-Encapsulate Transistors
·
Power dissipation & Collector current
·
Pcm: 0.2W Icm: 0.3A
· High voltage V(BR): 300V
2. Base
1.Emitter
3. Collector
RoHS Compliant Product
A
L
Top View
Top View
GV
D
D
MMBTA42W
NPN Silicon
General Purpose Transistor
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
S
B
C
H
K
J
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICSčTamb=25
unless otherwise specified
¥
Ď
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
H
DC current gain
H
H
(BR)CBO
(BR)CEO
(BR)EBOIE
CBO
EBO
FE（1
FE（2
FE（3
Ic= 100μA，IE=0 300 V
Ic= 1 mA， IB=0
300 V
= 100μA，IC=0 5 V
VCB=200 V , IE=0 0.25
VEB=5V, IC=0 0.1
VCE= 10V, IC= 1mA 60
）
VCE= 10V, IC=10mA 100 200
）
VCE=10V, IC=30mA 70
）
Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2m A 0.9 V
VCE= 20V, IC= 10mA
Transition frequency f
T
50 MHz
f=30MHz
μ
μ
A
A
DEVICE MARKING
MMBTA42W=K3M
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 2
Elektronische Bauelemente
MMBTA42W
NPN Silicon
General Purpose Transistor
MMBTA42W
120
100
80
60
, DC CURRENT GAIN
40
FE
h
20
0
0.1 1.0
100
10
TJ = +125°C
25°C
−55°C
Ceb @ 1MHz
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
80
70
60
50
VCE = 10 Vdc
10
100
1.0
C, CAPACITANCE (pF)
0.1
0.1
1.4
1.2
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
0.4
0.2
0.0
Ccb @ 1MHz
1.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
I
, COLLECTOR CURRENT (mA)
C
Figure 4. “ON” Voltages
100
1000
100100.1 1.0
40
30
20
T
f, CURRENT−GAIN BANDWIDTH (MHz)
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
V
@ 25°C, IC/IB = 10
CE(sat)
V
@ 125°C, IC/IB = 10
CE(sat)
V
@ −55°C, IC/IB = 10
CE(sat)
V
@ 25°C, IC/IB = 10
BE(sat)
V
@ 125°C, IC/IB = 10
BE(sat)
V
@ −55°C, IC/IB = 10
BE(sat)
V
@ 25°C, VCE = 10 V
BE(on)
V
@ 125°C, VCE = 10 V
BE(on)
V
@ −55°C, VCE = 10 V
BE(on)
T
= 25°C
J
V
= 20 V
CE
f = 20 MHz
10070503020107.05.03.02.0
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
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