Page 1
MMBTA42
MMBTA43
High-Voltage NPN Transistor
Surface Mount
P b
Lead(Pb)-Free
Maximum Ratings (T
Rating
Collector-Emitter Voltage MMBTA42
MMBTA43
Collector-Base Voltage MMBTA42
MMBTA43
Emitter-Base Voltage MMBTA42
MMBTA43
Collector Current-Continuous
=25°C Unlesso therwise noted)
A
1
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
COLLECTOR
3
2
EMITTER
Value
300
200
300
200
6.0
6.0
500
3
1
2
SOT-23
Unit
V
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (Note.1)
TA=25°C
Derate above 25°C
Thermal Resistance, Junctionto Ambient (Note.1)
Total Device Dissipation
Alumina Substrate (Note.2) TA=25°C
Derate above 25°C
Thermal Resistance, Junctionto Ambient (Note.1) 417
Junctionand Temperature Range
Storage Temperature Range
Symbol
P
D
R
θJA
P
D
R
θJA
T
J
Tstg
-55 to +150
Device Marking
MMBTA42 = 1D , MMBTA43 = M1E
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
225
1.8
556
300
2.4
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
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15-Dec-061/4
Page 2
MMBTA42
MMBTA43
WEITRON
Electrical Characteristics (T
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC=1.0mA, IB=0)
Collector-Base Breakdown Voltage
=10μA, IE=0)
(I
C
Emitter-Base Breakdown Voltage
=100μA, IC=0)
(I
E
Collector Cutoff Current
(V
=200V, IE=0)
CB
(VCB=160V, IE=0)
Emitter Cutoff Current
(VEB=6.0V, IC=0)
(VEB=4.0V, IC=0)
3
=25°C Unless Otherwise noted)
A
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol Min
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
300
200
300
200
6.0
6.0
-
-
-
-
Typ Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
Unit
V
V
V
μA
μA
On Characteristics
DC Current Gain
=1.0mA, VCE=10V)
(I
C
=10mA, VCE=10V)
(I
C
=30mA, VCE=10V)
(I
C
Collector-Emitter Saturation Voltage
=20mA, IB=2.0mA)
(I
C
Base-Emitter Saturation Voltage
(IC=10mA,IB=0.5mA)
(IC=100mA,IB=5.0mA)
3
Small-signal Characteristics
Current-Gain-Bandwidth Product
=10mA, VCE=20V, f=100MHz)
(I
C
Output Capacitance
=20V, IE=0, f=1.0MHz)
(V
CB
MMBTA42
MMBTA43
h
V
CE(sat)
V
BE(sat)
f
C
T
cb
FE
25
40
40
-
-
50
- -
-
-
-
-
-
- -
0.5
0.9
3.0
4.0
-
-
-
-
V
V
MHz
pF
3. Pulse Test : Pulse Width 300µS, Duty Cycle ≤ 2.0%.
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15-Dec-062/4
Page 3
MMBTA42
MMBTA43
120
Typical Characteristics
100
80
ENT GAIN
R
60
CUR
C
E, D
40
F
h
20
0
0.1 1.0 10 100
Tj=+1 2 5 C
2 5 C
-55 C
IC, COLLECTOR CURRENT (mA)
Figure ,1 DC Current Gain
1.4
V
1.2
)
1.0
S
OLT
0.8
(V
0.6
TAGE
OL
0.4
V, V
0.2
00
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
CE(sat)@25 C, ICIB = 10
V
CE(sat)@125 C, ICIB =10
V
CE(sat)@ -55 C, ICIB=10
V
BE(sat)@25 C, ICIB = 10
V
BE(sat)@125 C, ICIB =10
V
BE(sat)@ -55 C, ICIB =10
V
BE(on)@25 C,VCE = 10V
V
BE(on)@125 C,VCE = 10V
V
BE(on)@-55 C,VCE = 10V
Figure,2 "On"Voltages
WEITRON
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80
Hz)
M
70
H (
DT
I
60
DW
50
N-BAN
40
GAI
-
30
URRENT
20
, C
fT
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Ic, COLLECTOR CURRENT (mA)
Tj=2 5 C
VEC=2 0 V
f=2 0 MHz
Figure ,3 Current-Gain-Bandwidth
15-Dec-063/4
Page 4
MMBTA42
MMBTA43
SOT-23 Outline Dimension
A
B
TOP VIEW
D
E
G
H
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
SOT-23
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15-Dec-06
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