Page 1
1
Base
2
Emitter
3
Millimeter
Millimeter
Min. Max. Min. Max.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Elektronische Bauelemente
FEATURES
Low saturation voltage
MARKING
619
PACKAGE INFORMATION
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
MMBT619
2A , 50V
SOT-23
Package MPQ Leader Size
SOT-23 3K 7 inch
REF.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
Collector
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 2 A
(TA=25°C unless otherwise specified)
50 V
CBO
50 V
CEO
5 V
EBO
REF.
Collector Power Dissipation PC 350 mW
Thermal Resistance From Junction To Ambient R
357 °C / W
θJA
Maximum Power Dissipation 1 PCM 625 mW
Thermal Resistance From Junction To Ambient 1 R
Junction, Storage Temperature TJ, T
Note:
1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Feb-2012 Rev. A
200 °C / W
θJA
150, -55~150 °C
STG
Page 1 of 2
Page 2
MMBT619
2A , 50V
Elektronische Bauelemente
NPN Plastic Encapsulated Transistor
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage
1
V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain 2 hFE
Collector to Emitter Saturation Voltage 1 V
Base to Emitter Saturation Voltage 1 V
Base to Emitter On Voltage 1 V
Collector output capacitance Cob - - 20 pF VCB=10V, f=1MHz
50 - - V IC=100µA, IE=0
(BR)CBO
50 - - V IC=10mA, IB=0
(BR)CEO
5 - - V IE=100µA, IC=0
(BR)EBO
- - 100 nA VCB=40V, IE=0
CBO
- - 100 nA VEB=4V, IC=0
EBO
200 - -
VCE=2V, IC=10mA
300 - - VCE=2V, IC=200mA
200 - - VCE=2V, IC=1A
100 - - VCE=2V, IC=2A
- 40 - VCE=2V, IC=6A
CE(sat)
- - 20
- - 200 IC=1A, IB=10mA
IC=100mA, IB=10mA
mV
- - 220 IC=2A, IB=50mA
- - 1 V IC=2A, IB=50mA
BE(sat)
- - 1 V IC=2A, VCE=2V
BE(on)
Test Conditions
Turn-On Time t
Turn-Off Time t
- 170 - ns
(on)
- 750 - ns
(off)
VCC=10V, IC=1A, IB1= -IB2=10mA
Transition Frequency fT 100 - - MHz VCE=10V, IC=50mA, f=100MHz
Note:
1. Pulse width≦300µs, duty cycle≦2.0%
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Feb-2012 Rev. A
Page 2 of 2
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