Datasheet mmbt593 Datasheet [en, de]

Page 1
r
r
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
RoHS Compliant Product
FEATURES
Medium Power Tran sistor
MARKING
593
1
Base
Collector
Emitte
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Emitter Voltage V Collector to Base Voltage V Emitter to Base Voltage V Collector Current - Continuous IC -1 A Total Device Dissipation PD 250 mW Junction and Storage Temperature TJ, T
ELECTRICAL CHARACTERISTICS (T
-100 V
CEO
-120 V
CBO
-5 V
EBO
150,
STG
= 25°C unless otherwise noted)
A
3
2
°C
MMBT593
PNP Silicon
General Purpose Transistor
3
Top View
1
K E
F
REF.
Min. Max.
A 2.80 3.00 G 0.10 REF. B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 D 0.90 1.15 K 0.5 REF.
E 1.80 2.00 L 0.95 TYP. F 0.30 0.50
SOT-23
L
C B
2
D
G
Millimeter Millimete
1
2
H J
REF.
Min. Max.
3
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector–Emitter Breakdown Voltage BV Collector–Base Breakdown Voltage BV Emitter–Base Breakdown Voltage BV Collector Cut-off Current
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage V
Base–Emitter Voltage V Transition Frequency fT 150 - - MHz VCE=-10V, IC=- 50mA, f=100MHz Collector Output Capacitance COB - - 5.0 pF VCB = -10V, IE = 0, f = 1.0MHz
-100 - - V IC = -10mA, IB = 0
CEO
-120 - - V IC = -100μA, IE = 0
CBO
-5 - - V IE = -100μA, IC = 0
EBO
I
CBO
I
CES
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
h
FE(4)*
V
CE(sat)*
V
CE(sat)*
- - -1.1 V IC = - 500mA, IB = - 50mA
BE(sat)*
- - -1.0 V VCE = -5V, IC = 1mA
BE(on)*
- -
100 100 100
-
50
- -
-0.1
-0.1
-0.1
-
-
300
-
-0.2
-0.3
μA μA μA
-
V
V
= -100V, IE = 0
CB
V
= -100V, IE = 0
CE
V
= -4V, IC = 0
EB
I
= - 1mA, VCE = - 5.0V
C
I
= - 250mA, VCE = - 5.0V
C
I
= - 0.5A, VCE = - 5.0V
C
I
= - 1 A, VCE = - 5.0V
C
I
= - 250mA, IB = - 25mA
C
I
= - 500mA, IB = - 50mA
C
*Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2%
01-June-2002 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTICS CURVE
MMBT593
General Purpose Transistor
PNP Silicon
01-June-2002 Rev. A Page 2 of 2
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