
February 2008
MMBT5770
NPN RF Transistor
• This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
• Sourced from process 43.
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
MMBT5770 — NPN RF Transistor
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
TJ, T
STG
Thermal Characteristics T
Collector-Base Voltage 30 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 4.5 V
Collector Current - Continuous 10 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
=25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Electrical Characteristics T
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient 556 °C/W
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
On Characteristics *
h
FE
V
CE (sat)
V
BE (sat)
Small Signal Characteristics
f
T
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = 1.0 μA, IE = 0 30 V
Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V
Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 3 V
Collector-Cutoff Current
DC Current Gain V
VCB = 15 V, IE = 0
= 1.0V, IC = 3.0mA 30
CE
50 nA
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.4 V
Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 1.0 V
Current Gain Bandwidth Product IC = 4.0mA, V
= 10V, f = 100MHz 600 MHz
CE
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev . 1.0 .0 1

Typical Characteristics
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev . 1.0 .0 2

Typical Characteristics (continued)
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev . 1.0 .0 3

Typical Characteristics (continued)
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev . 1.0 .0 4

Typical Characteristics (continued)
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev . 1.0 .0 5

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MMBT5770 NPN RF Trans istorMMBT5770
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAK E CHANGES WITHOUT FURTHER NOTICE TO ANY PRO DUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to per form can be re asonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reas onably expected to result
in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains f inal specifications. Fairchild Semiconducto r reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev . 1.0 .0 6