Page 1
MMBT5551M3T5G
NPN High Voltage
Transistor
The MMBT5551M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose high
voltage applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector −Emitter Voltage V
Collector −Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
P
R
q
P
R
q
D
JA
D
JA
stg
160 Vdc
180 Vdc
6.0 Vdc
60 mAdc
mW
265
mW/°C
2.1
470 °C/W
640
5.1mWmW/°C
195 °C/W
−55 to
+150
°C
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COLLECTOR
3
1
BASE
2
EMITTER
MARKING
3
SOT−723
CASE 631AA
2
1
AH = Specific Device Code
M = Date Code
STYLE 1
DIAGRAM
AH M
ORDERING INFORMATION
Device Package Shipping
MMBT5551M3T5G SOT−723
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
8000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1 Publication Order Number:
MMBT5551M3/D
Page 2
MMBT5551M3T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
I
CES
FE
160 −
180 −
6.0 −
−
−
100
100
− 50
80
80
250
30
−
−
0.15
0.20
−
−
−
−
100
−
−
1.0
1.0
50
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
Vdc
Vdc
nA
−
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MMBT5551M3T5G
500
300
200
100
50
30
20
FE
h , DC CURRENT GAIN
10
7.0
5.0
0.1 0.2 0.3 0.5 0.7 1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
CE
V
0
0.005 0.01 0.2 0.5 1.0
TJ = 125°C
25°C
-55°C
IC = 1.0 mA
0.02 0.05 0.1
3.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
10 mA
IB, BASE CURRENT (mA)
VCE = 1.0 V
VCE = 5.0 V
5.0 7.0 10 20 30 50 70 100
30 mA
2.0 20 50
5.0
100 mA
10
1
10
0
10
-1
10
-2
10
-3
10
, COLLECTOR CURRENT (A)μI
C
-4
10
-5
10
0.4 0.3 0.1
Figure 2. Collector Saturation Region
VCE = 30 V
TJ = 125°C
IC = I
CES
75°C
REVERSE FORWARD
25°C
0.2 0 0.1 0.2 0.40.3 0.60.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
1.0
TJ = 25°C
0.8
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
0
0.1 0.2 0.5
V
BE(sat)
V
CE(sat)
@ IC/IB = 10
@ IC/IB = 10
1.0 2.0 5.0 10 20 50 100
3.0 300.3
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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, TEMPERATURE COEFFICIENT (mV/ C)°θ
V
2.5
2.0
1.5
1.0
0.5
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
MMBT5551M3T5G
TJ = - 55°C to +135°C
V
0.25 mF
V
in
BB
-8.8 V
100
100
R
5.1 k
B
qVC for V
CE(sat)
0
V
in
10 ms
INPUT PULSE
10.2 V
qVB for V
BE(sat)
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
3.0 k
1N914
V
CC
30 V
R
C
V
out
100
70
TJ = 25°C
50
30
20
10
C
7.0
ibo
5.0
C, CAPACITANCE (pF)
3.0
2.0
1.0
0.2 0.5 1.0 2.0 5.0 10 20
0.3 0.7 3.0 7.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances Figure 8. Turn−On Time
5000
3000
2000
1000
500
t, TIME (ns)
300
ts @ VCC = 120 V
200
C
obo
tf @ VCC = 120 V
tf @ VCC = 30 V
1000
500
300
200
tr @ VCC = 30 V
100
t, TIME (ns)
50
30
td @ V
VCC = 120 V
EB(off)
20
10
0.3 1.0 10
0.50.2
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
TJ = 25°C
= 1.0 V
2.0
3.0 5.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
20 30 50
100 200
100
50
0.3 1.0 10
0.50.2 2.0 100 2003.0 5.0
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
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20 30 50
4
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b1
MMBT5551M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−X−
D
3
1
2
e
−Y−
E
b
2X
X0.08 (0.0032) Y
A
H
L
E
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.40
0.0157
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC
H 1.15 1.20 1.25
E
L 0.15 0.20 0.25
INCHES
MIN NOM MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MMBT5551M3/D
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