Page 1
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
1
Base
2
Emitter
3
P
ARAMETER
SYMBOL
RATINGS
UNIT
Millimeter
Millimeter
Min. Max.
Min. Max.
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
FEATURE
Ideal for Medium Power Amplification and Switching
Also Available in Lead Free Version
Complementary to MMBT5551W
MARKING: K4M
RoHS Compliant Product
Collector
MMBT5401W
PNP Silicon
Plastic-Encapsulate Transistor
SOT-323
REF.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
REF.
MAXIMUM RATINGS
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current-Continuous IC -200 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance, Junction to Ambient R
Opterating & Storage Temperature TJ, T
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency fT 100 MHz VCE=-10V, IC=-10mA, f=100MHz
Collector Output Capacitance Cob 6 pF VCB=-10V, IE=0, f=1MHz
Noise Figure NF 8 dB
(TA = 25°C unless otherwise specified)
-160 V
CBO
-150 V
CEO
-5 V
EBO
625 °C/W
θJA
STG
(TA = 25°C unless otherwise specified)
MIN MAX UNIT TEST CONDITION
-160 V IC=-100µA, IE=0
(BR)CBO
-150 V IC = -1mA, IB = 0
(BR)CEO
-5 V IE=-10µA, IC=0
(BR)EBO
-50 nA VCB=-120V, IE=0
CBO
-50 nA VEB=-3V, IC=0
EBO
h
50 VCE=-5V, IC=-1mA
FE1
h
60 240 VCE=-5V, IC=-10mA
FE2
h
50 VCE=-5V, IC=-50mA
FE3
V
-0.2 V IC=-10mA, IB=-1mA
CE(sat)
V
-0.5 V IC=-50mA, IB=-5mA
CE(sat)
V
-1 V IC=-10mA, IB=-1mA
BE(sat)
V
-1 V IC=-50mA, IB=-5mA
BE(sat)
150, -55 ~ 150 °C
VCE=-5V, IC=-0.2mA, f=1KHz,
RS=10Ω
01-Dec-2009 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
MMBT5401W
Plastic-Encapsulate Transistor
PNP Silicon
01-Dec-2009 Rev. A Page 2 of 2
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