Datasheet MMBT5088, MMBT5089, 2N5088, 2N5089 Datasheet (Fairchild)

g

A

2N5088 / MMBT5088 / 2N5089 / MMBT5089

2N5088 2N5089

C

B

E

TO-92

MMBT5088 MMBT5089

C

SOT-23

Mark: 1Q / 1R

B

E

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage Collector-Base Voltage

Emitter-Base Voltage 4.5 V Collector Current - Continuous 100 mA Operating and Stora ge Junction Temperature Range -55 to +150

2N5088 2N5089 2N5088 2N5089

30 25 35 30

V V V V

°

C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5088 2N5089

P

D

R

θ

JC

R

θ

J

Total Device Dissipa tion

Derate above 25°C

Ther mal Resistance, Junction to Case 83.3 Thermal Resistance, Junction to Ambient 200 357

625

5.0

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

*MMBT5088 *MMBT5089

350

2.8

2N5088/2N5089/MMBT5088/MMBT5089, Rev A

mW

mW/°C

C/W

°

C/W

°

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

CE(

sat

V

BE(on)

Collector-Emitter Breakdown Voltage*

Collector-Base Breakdown Voltage

Collector Cutoff Current

I

= 1.0 mA, IB = 0 5088

C

I

= 100 µA, IE = 0 5088

C

V

= 20 V, IE = 0 5088

CB

= 15 V, IE = 0

V

CB

5089

30 25

35 30

Emitter Cutoff Current VEB = 3.0 V, IC = 0

V

= 4.5 V, IC = 0

EB

DC Current Gain

I

= 100 µA, VCE = 5.0 V 5088

C

5089

I

= 1.0 mA, VCE = 5.0 V 5088

C

5089

= 10 mA, VCE = 5.0 V* 5088

I

C

5089

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V

)

300 400 350 450 300 400

Base-Emitt er On Vo ltage IC = 10 mA, VCE = 5.0 V 0.8 V

50 50

50

100

900

1200

V V

nA nA

2N5088 / MMBT5088 / 2N5089 / MMBT5089

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

C

eb

h

fe

Current Gain - Bandwidth Product Collector-Base Capacitance VCB = 5.0 V, I

Emitter-Base Capacit anc e VBE = 0.5 V, I Small-Signal Current Gain

NF Noise Figure

= 500 µA,V

I

C

= 5.0 mA,

CE

f = 20 MHz

= 0, f = 100 kHz 4.0 pF

E

= 0, f = 100 kHz 10 pF

C

I

= 1.0 mA, V

C

= 5.0 V, 5088

CE

f = 1.0 kHz 5089

= 100 µA, VCE = 5.0 V, 5088

I

C

= 10 kΩ, 5089

R

S

f = 10 Hz to 15.7 kHz

50 MHz

350 450

1400 1800

3.0

2.0

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

NPN (Is=5.911f Xti=3 Eg=1.11 V af=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)

3

dB dB

T ypical Characteristics

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

T ypic al Puls e d C u rrent Ga in

vs Collect or Current

1200

1000

800

600

400

200

0

FE

0.01 0.03 0.1 0.3 1 3 10 30 100

h - TYPICAL PULSED CUR RENT GAIN

125 °C

25 °C

I - COLLECTOR CURRENT (mA)

C

- 40 °C

V = 5.0 V

CE

Base-Emitter Saturation

Voltage vs Collector Cur rent

1

0.8

0.6

0.4

0.2

0.1 1 10 100

BESAT

V - COLLECTOR- EM ITT ER VO LTA GE (V)

- 40 °C

25 °C

125 °C

β

I - COLLECT OR CURRENT (mA)

C

= 10

Collector-Emitter Sat urati on Voltage vs Collector Curr en t

0.3

0.25

= 10

β

0.2

0.15

0.1

0.05

0.1 1 10 100

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

- 40 °C

Base-Emitter ON Voltage vs

Collector Current

1

0.8

0.6

0.4

0.2

BEON

0.1 1 10 40

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C 25 °C

125 °C

V = 5.0 V

CE

I - COLLECTOR CURRENT (m A)

C

Co llector-C u to ff Cur re nt

vs Ambie nt Temp er ature

10

V = 45V

CB

1

CBO

I - C OLLE CT O R CURRENT (nA)

0.1 25 50 75 100 125 150

T - A M BI E NT TE MP ERATURE ( C)

A

°

Typical Characteristics (continued)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

Input and Output Capacitance

vs Reverse Bias Voltage

5

4

3

C

te

2

CAPACITANCE (pF)

1

0

048121620

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ob

Normalized Collector-Cutoff Current

°

A

CHARACTERIS TIC S RELATIVE TO VALUE AT T = 25 C

1000

vs Amb ie nt Temp er atu re

100

10

1

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

Contours of Constant Gain

Bandwi dt h Prod uc t (f )

10

7 5

3

2

CE

V - COLLECTOR VOLTAGE (V)

1

0.1 1 10 100

I - COLLEC T OR CURRENT (mA)

C

150 MH z

125 MH z 100 MH z

75 MHz

T

175 MH z

Wideband Noise Frequency

vs Source Resistance

5

4

3

2

1

NF - NOI S E FI GURE (d B)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

V = 5.0 V

CE

BANDWI DT H = 1 5.7 kH z

I = 100 µA

C

R - SOURCE RESIST ANCE ( )

S

I = 30 µA

C

I = 10 µA

C

Ω

3

Noise Figure vs Frequency

10

I = 200 µA,

C

8

6

4

2

NF - NOISE FIGURE (dB)

0

0.0001 0.001 0.01 0.1 1 10 100

R = 10 k

I = 100 µA,

C

R = 10 k

S

I = 1.0 mA,

C

R = 500

S

I = 1.0 mA,

C

R = 5.0 k

S

f - FREQU ENCY (M Hz)

Ω

S

Ω

V = 5.0V

CE

Power Dissipation vs

Ambient Temperature

625

500

SOT-23

375

250

125

D

P - POW ER DISSIPATION (mW)

0

0 25 50 75 100 125 150

TO-92

TEMPERATURE ( C)

o

Typical Characteristics (continued)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

NPN General Purpose Amplifier

(continued)

Cont ours of Co ns tant

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

V = 5. 0 V

CE

f = 100 Hz BANDWIDTH

200

= 20 Hz

S

R - SOURC E RESISTANCE ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

3.0 dB

4.0 dB

6.0 dB

8.0 dB 10 dB

12 dB

14 dB

Contours of Constant

Nar r ow Band No is e Figure

10000

Ω

5000

2000 1000

500

V = 5.0V

CE

f = 10kHz

200

BANDWIDTH

S

= 2.0kHz

R - SOURCE RESISTANCE ( )

100

1 10 100 1000

I - COLL ECTO R CURR ENT ( A)

C

1.0 dB

2.0 dB

µ

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Consta n t

Narrow Band Noise Figure

10,000

Ω

5,000

2,000

1,000

500

V = 5.0 V

CE

f = 1.0 kHz BANDWIDTH

200

= 200 Hz

S

R - SOURCE RESISTANCE ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Constant

Nar row B and No ise Fi gure

10000

Ω

5000

2000 1000

V =

CE

500

5.0V f = 1.0 MHz

200

BANDW IDTH

S

= 200kHz

R - SOURCE RESISTANCE ( )

100

0.01 0.1 1 10

I - COLLEC TO R CU RRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

8.0 dB

µ

7.0 dB

µ

5.0 dB

6.0 dB

NPN General Purpose Amplifier

Typical Common Emitter Characteristics (f = 1.0 kHz)

2N5088 / MMBT5088 / 2N5089 / MMBT5089

(continued)

Typical C o mmo n Emi tter Char acteri stics

1.4

CE

1.3

h

oe

1.2

1.1

h

re

1

h

ie

0.9

h

fe

0.8

CH AR AC TER ISTI CS RELATI VE TO VALU E( V =5V)

0 5 10 15 20 25

V - COLLECTOR VOLTAGE (V)

CE

h

fe

h

ie

h

re

h

oe

I = 1.0mA

C

f = 1. 0kHz T = 25 C

A

°

Typ ical Common Emitter Characteristics

100

C

f = 1.0kHz

10

h and h

re

ie

h

oe

1

h

fe

0.1

Typic al Common E mitter Characteristics

°

1.5

A

1.4

V = 5.0V

CE

1.3

f = 1.0kHz I = 1 .0mA

1.2

C

1.1 1

0.9

h

0.8

0.7

0.6

0.5

CHARACTERISTICS RE LATIVE TO VALUE (T =25 C)

h

oe

h

fe

h

ie

re

-100 -50 0 50 100 150

T - JU NC TIO N T EMP ERATURE ( C)

J

oe

h

re

h

fe

ie

h

ie

h

re

h

fe

h

oe

°

3

0.01

CHARACTERISTICS RELATIVE TO VALUE (I =1mA)

0.1 0.2 0.5 1 2 5 10 20 50 100

I - COLLEC TOR CUR RE NT (mA)

C

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PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G