Datasheet MMBT5088LT1, MMBT5089LT1 Datasheet (LRC)

LESHAN RADIO COMPANY, LTD.

Low Noise T ransistors

NPN Silicon

COLLECTOR
3

1
BASE

2
EMITTER

MAXIMUM RATINGS

Rating Symbol 5088LT 15089LT1 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
C

ollector Current — Continuous

CEO

CBO

EBO

I C 50 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol M a x Unit

Total Device Dissipation FR- 5 Board (1) P
T A =25 °C

Derate above 25 °C 1.8 mW/ °C

Thermal Resistance, Junction to Ambient R

Total Device Dissipation P

Alumina Substrate,( 2) TA=25°C
Derate above 25°C 2.4 mW/ °C

Thermal Resistance,Junction to Ambient R

Junction and Storage Temperature T

30 25 Vdc

35 30 Vdc

4.5 Vdc

D

θJA

D

θJA

, T

J

stg

225 mW

556 °C/W
300 mW

417 °C/W

–55 to + 150

MMBT5088LT1
MMBT5089LT1

3

1

2

CASE 318-08, STYLE 6

SOT-23 (TO-236AB)

°C

DEVICE MARKING

MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage V
(I C = 1.0 mAdc, I B = 0) MMBT5088 30 —

MMBT5089 25 —
Collector–Base Breakdown Voltage V
(I C = 100 µAdc, I E = 0) MMBT5088 35 —

MMBT5089 30 —

Collector Cutoff Current I

(V

= 20 Vdc, I E = 0 ) MMBT5088 — 50

CB

(V

= 15 Vdc, I E = 0 ) MMBT5089 — 50

CB

Emitter Cutoff Current I

(V

= 3.0Vdc, I C = 0) MMBT5088 — 50

EB(off)

(V

= 4.5Vdc, I C = 0) MMBT5089 — 1 0 0

EB(off)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

(BR)CEO

(BR)CBO

CBO

EBO

Vdc

Vdc

nAdc

nAdc

M18–1/4

LESHAN RADIO COMPANY, LTD.

MMBT5088LT1 PNP MMBT5089LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Ma x Unit

ON CHARACTERISTICS

DC Current Gain h
(IC=100µAdc,VCE=5.0Vdc) MMBT5088 300 900

MMBT5089 400 1200

(IC=1.0mAdc,V

=5.0Vdc) MMBT5088 350 —

CE

MMBT5089 450 —

(IC = 10mAdc, VCE=5.0Vdc) MMBT5088 300 —

MMBT5089 400 —
Collector–Emitter Saturation Voltage V
(IC=10mAdc,IB=1.0mAdc) — 0.5
Base–Emitter Saturation Voltage V
(IC =10mAdc,IB=1.0mAdc) — 0.8

FE

CE(sat)

BE(sat)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f
(IC= 500 µAdc,VCE=5.0Vdc,f=20MHz) 50 —
Collector–Base Capacitance C
(VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded) — 4.0
Emitter–Base Capacitance C
(VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded) — 10
Small Signal Current Gain h
(IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz) MMBT5088 350 1400

MMBT5089 450 1800
Noise Figure N F dB
(IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz) MMBT5088 — 3.0

MMBT5089 — 2.0

T

cb

eb

fe

—

Vdc

Vdc

MHz

pF

pF

—

R

S

i

n

IDEAL
TRANSISTOR

~

e

n

Figure 1.T ransistor Noise Model

M18–2/4

LESHAN RADIO COMPANY, LTD.

MMBT5088LT1 MMBT5089LT1

NOISE CHARACTERISTICS

(V

= 5.0 Vdc, T A = 25°C)

CE

NOISE VOLTAGE

30

20

I C = 10 mA

3.0mA

10

1.0mA

7.0

5.0

, NOISE VOLTAGE (nV)

n

e

3.0
10 20 50 100 200 5001.0k 2.0k 5.0k10k 20k 50k100k

Figure 2. Effects of Frequency

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

, NOISE CURRENT (pA)

n

0.2

I

R S~

0

~

0.1
10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k

BANDWIDTH=1.0Hz

R

300µA

f, FREQUENCY (Hz)

10µA

~

0

S

~

BANDWIDTH=1.0Hz

I C=10mA

3.0mA

1.0mA

300µA

100µA

30µA

30

BANDWIDTH=1.0Hz

20

R

~

0

S

~

f = 10Hz

10

7.0

5.0

, NOISE VOLTAGE (nV)

n

e

3.0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

10kHz

I C , COLLECTOR CURRENT (mA)

Figure 3. Effects of Collector Current

20

16

12

8.0

4.0

NF, NOISE FIGURE (dB)

0

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH=10 Hz to15.7 kHz

500µA

100µA

10µA

100Hz

1.0kHz

100kHz

=1.0 mA

I

C

f, FREQUENCY (Hz)

Figure 4. Noise Current

300
200

BANDWIDTH=1.0Hz

100

70
50

30
20

10

7.0

, TOTAL NOISE VOLTAGE (nV)

5.0

T

V

3.0
10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k

100µA

3.0mA

1.0mA

300µA

I

C

=10mA

R S , SOURCE RESISTANCE (OHMS)

Figure 6. Total Noise Voltage

10µA

100 Hz NOISE DATA

20

16

12

30µA

8.0

4.0

NF, NOISE FIGURE (dB)

0

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

R S , SOURCE RESISTANCE (OHMS)

Figure 5. Wideband Noise Figure

I

= 10mA

C

BANDWIDTH=1.0Hz

R S , SOURCE RESISTANCE (OHMS)

3.0mA

1.0mA

300µA

30µA

Figure 7. Noise Figure

100µA

10µA

M18–3/4

LESHAN RADIO COMPANY, LTD.

MMBT5088LT1 MMBT5089LT1

4.0

3.0

2.0

1.0

0.7

0.5

0.4

0.3

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

h

V

=5.0 V

CE

T A=125°C

25°C

–55°C

I C , COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

1.0

T

=25°C

J

0.8

0.6

V

@ V

= 5.0V

BE

CE

0.4

V, VOLTAGE (VOLTS)

0.2

V

@ I C /I B =10

CE(sat)

0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

I C , COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages

0.8

0.6

C

0.4

0.3

0.2

ob

C

cb

C

C

ib

eb

T

J

C, CAPACIT ANCE (pF)

1.0

0.8

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

V R , REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

= 25°C

–0.4

–0.8

–1.2

–1.6

, BASE– EMITTER

θVBE

R

–2.0

T

=25°C to 125°C

J

–55°C to25°C

–0.4

TEMPERATURE COEFFICIENT (mV/ °C)

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

I C , COLLECTOR CURRENT (mA)

Figure 10. Temperature Coefficients

500

300

200

100

PRODUCT (MHz)

, CURRENT– GAIN — BANDWIDTH

T

f

V

= 5.0 V

CE

70

50

= 25°C

T

J

1.0 2.0 5.0 10 20 50 100

I C , COLLECTOR CURRENT (mA)

Figure 12. Current–Gain — Bandwidth Product

M18–4/4