Datasheet mmbt5088-89 Datasheet

MMBT5088

Lead(Pb)-Free

P b

1/5

MMBT5089

Low Noise NPN Transistor Surface Mount

Maximum Ratings

Rating

Collector-Emitter Voltage Collec tor-B ase Voltage E m itter-B ase Collec tor C urrent-Continuous

Thermal Characteristics

Tota l Device Diss ipation FR -5 B oard T A=2 5 C Derate above 25 C

Ther ma l R esis tance, Junc tion to Ambient

Tota l Device Diss ipation Alum ina S ubstrate, Derate above 25 C

Ther ma l R esis tance, Junc tion to Ambient

Junction and S torage, Temperature

Voltage

Characteristics

(2 )

TA=2 5 C

(1 )

COLLECTOR

3

1

BASE

2

EMITTER

Symbol

V

CE O

V

CB O

V

E B O

I

C

Symbol Max

P

D

R

JA

P

D

R

JA

T

J,Tstg

5088LT1 5089LT1

30 35

22 5

1. 8

55 6

300

2.4

41 7

-5 5 to +150

4.5 50

1

2

SOT-23

25 30

3

Unit

Vdc Vdc Vdc

mAdc

Unit

mW

mW/ C

C/ W

mW

mW/ C

C/ W

C

Device Marking

MMBT5088=1Q ; MMBT5089=1R

Electrical Characteristics (TA=25ºC Unless Otherwise noted)

Characteristics Symbol

Off Characteristics

Collent-Emitter Breakdown Voltage IC = 1.0mA, IB=0 MMBT5088 IC = 1.0mA, IB=0 MMBT5089

Collent-Base Breakdown Voltage IC = 100µA, IE=0 MMBT5088 IC = 100µA, IE=0 MMBT5089

Collent Cutoﬀ Current VCB = 20V, IE=0 MMBT5088 VC

B = 15V, IE=0 MMBT5089

Emitte Cutoﬀ Current VEB(oﬀ) = 3.0V, IC=0 MMBT5088 VEB(oﬀ) = 4.5V, IC=0 MMBT5089

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

V(B R )CE O

V(B R )CB O

I

CB O

I

E B O

Min Max

30 25

35 30

-

50 50

50

100

Unit

V

nA

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MMBT5088 MMBT5089

Electrical Characteristics (T

Characteristics

A

On Characteristics

DC Current Gain V

= 5.0V, IC = 100µA MMBT5088

CE

MMBT5089 VCE= 5.0V, IC= 1.0mA MMBT5088 MMBT5089 VCE= 5.0V, IC= 10mA MMBT5088 MMBT5089

Collector-Emitter Saturation Voltage IC = 100mA, IB = 1.0mA

Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA

Small-signal Characteristics

Current-Gain-Bandwidth Product VCE= 5.0V, IC = 500µA, f=20MHz)

=25˚C unless otherwise noted) (Countinued)

Symbol

(1)

h

FE

(2)

h

FE

(3)

h

FE

V

CE(sat)

V

BE(sat)

f

T

Min

300 400 350 450 300 400

-

50 MHz

Max

900

1200

-

0.5

0.8

-

Unit

-

V

Collector-Base Capacitance V

= 5.0V, IE = 0, f = 1.0MHz emitter guarded

CB

Emitter-Base Capacitance V

= 0.5V, IC = 0, f = 1.0MHz collector guarded

EB

Small-Signal Current Gain

= 5.0V, I

V

CE

MMBT5089

Noise Figure V

= 5.0V, IC = 100 µA, RS=1.0k ohms, f=1.0kHz MMBT5088

CE

MMBT5089

=1.0 mA, f=1.0 kHz MMBT5088

C

R

S

e

~

n

i

n

IDEAL

TRANSISTOR

C

h

NF

cb

eb

-

fe

350 450

-

4.0

10

1400 1800

3.0

2.0

pF

-

dB

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Fig 1.Transistor Noise Model

13-Jan-06

3/5

MMBT5088 MMBT5089

NOISE CHARACTERISTICS

NO ISE VOLTAGE

30

)Vn( EGATLOV ESION ,

20

IC= 10 mA

3. 0m

10

1. 0mA

7.

0

5.0

n

e

0

3. 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k

Fig 2. Effects of Frequency

10

7.0 0

5.

)Ap

3.

0

( T

2.

0

NE RR

0

1.

UC E

7

0.

5

S

I O

0.3

N ,

n

0.

2

I

R

~

0

S

~

1

0.

10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k

BA ND WI DT H= 1. 0H z

A

30

0µA

10µ A

~

0

R

S

~

f, FREQUENCY (Hz)

BA ND WI DT H= 1. 0H

IC=10mA

3. 0m

1. 0m

0µA

30

10

0µA

30µ A

A

(VCE= 5.0 Vdc, T A= 25°C)

30

BA ND WI DT H= 1. 0H z

)Vn

20

( E

G A

T L

10

O V

ES

7.

0

I ON

5.0

,

n

e

3.0

Fig 3. Effects of Collector Current

z

20

)

16

B d

( ERU

12

G

IF ES

8.

0

IO N

,

4.

0

FN

0

R

~

0

S

~

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

IC, COLLECTOR CURRENT (mA)

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

DTH=1 0 Hz to 15.7 kHz

BANDW I

f = 10Hz

10 kH

50

0µA

10

10µ A

z

0µA

100Hz

10 0kH

=1. 0 mA

I

C

1. 0k H

z

f, FREQUENCY (Hz)

Fig 4. Noise Current

300

) V

0

20

n

BA ND WI DT H= 1. 0H

(

EGA

100

T

70

LO

50

V ESION

30

20

L AT

10

O

7.

0

T ,

0

5.

T

V

3.

0

10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k

z

30

RS, SOURCE RESISTANCE (OHMS)

Fig 6. Total Noise Voltage

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0µA

10

3. 0mA

1. 0m

0µA

A

IC=10 mA

10µ A

Fig 5. Wideband Noise Figure

10 0 H z NOI SE DATA

20

)B

16

d( E

R

12

UG IF

E

8.

30µ A

0

S

I O N

,F

4.

0

N

0

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

RS, SOURCE RESISTANCE (OHMS)

IC= 10mA

BA ND WI DT H= 1. 0H

z

RS, SOURCE RESISTANCE (OHMS)

Fig 7. Noise Figure

3. 0m

A

1. 0m

30µ A

A

0µA

30

10

0µA

10µ A

13-Jan-06

4/5

MMBT5088 MMBT5089

)DEZ

4.0

IL

0

3.

A M R

2.

0

O N(

N

IAG TNER

1.

0

0.

7

0.

5

R

0.

4

U C

0.

3

CD ,

0.

2

EF

0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

h

0

1.

T

=25°C

)S T

LO

V( E

GA TLOV

, V

J

0.

8

0.

6

VBE@ V CE= 5.0V

0.

4

0.

2

V

CE(sat )

0

0.0

1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

VCE=5.0 V

@ I C/IB=10

IC, COLLECTOR CURRENT (mA)

Fig 9. “On” Voltages

TA=125°C

25 °

C

–5 5°

C

IC, COLLECTOR CURRENT (mA)

Fig 8. DC Current Gain

)

4

–0.

C ° /

Vm(

RET

8

–0.

TN E

IC

TI

I

ME

FFE

2

–1.

–E

OC

SAB

6

–1.

ERU

,

BV

T

θ E

A

R

–2.0

E PM

E

4

–0.

T

0.0

1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Fig 10. Temperature Coef ficients

T

=25 °C t o 12 5°C

J

–5 5°C

to 25 °C

8

0.

0.6

)Fp( ECN

0.4

0.3

AT I C

AP

2

0.

A C ,C

1.

0

0.8

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

VR, REVERSE VOLTAGE (VOLTS)

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T

J

C

ob

C

cb

C

ib

eb

Fig 11. Capacitance

= 25°C

50

0

H T D

I

300

W D NA

)zH

20

0

B —

M

(

TC

N

I A

U

G –TNE

DO

100

R P

RR U

C ,

T

f

VCE= 5.0 V

70

TJ= 25°C

50

1.

0 2.0 5.0 10 20 50 100

IC, COLLECTOR CURRENT (mA)

Fig 12. Current–Gain - Bandwidth Product

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5/5

MMBT5088 MMBT5089

SOT-23 Package Outline Dimension

A

B

TOP VIEW

D

E

G

H

C

K

L

J

M

Dim

A B C D

E G H

J

K

L M

SOT-23

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

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