Datasheet MMBT5087LT1 Datasheet (LRC)

Low Noise T ransistor

LESHAN RADIO COMPANY, LTD.

PNP Silicon

3
COLLECTOR

1
BASE

2
EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

CEO

CBO

EBO

C

DEVICE MARKING
MMBT5087LT=2Q
THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation RF-5 Board (1) P
T A =25 °C
Derate above 25°C 1.8 mW/°C

Thermal Resistance, Junction to Ambient R
Total Device Dissipation P

Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T

– 50 Vdc

– 50 Vdc

– 3.0 Vdc

– 50 mAdc

D

θJA

D

θJA

stg

225 mW

556 °C/W
300 mW

417 °C/W

–55 to +150

MMBT5087LT1

3

1

2

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

°C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min M ax Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage V
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage V
(I C = –100 µAdc, I E = 0)
Collector Cutoff Current I
(V

= –10 Vdc, I E= 0) — –10

CB

(V

= –35 Vdc, I E= 0) — –50

CB

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

(BR)CEO

(BR)CBO

CBO

– 50 — Vdc

– 50 — Vdc

n Adc

M17–1/6

LESHAN RADIO COMPANY, LTD.

MMBT5087LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Ma x Unit

ON CHARACTERISTICS

DC Current Gain h
(I C = –100µAdc, V
(I C = –1.0 mAdc, V
(I C = –10 mAdc, V

= –5.0 Vdc) 250 800

CE

= –5.0 Vdc) 250 ––

CE

= –5.0 Vdc) 250 ––

CE

Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
Base–Emitter Saturation Voltage

(I

= –10 mAdc, I B = –1.0 mAdc)

C

V

V

FE

CE(sat)

BE(sat)

–– – 0.3 V dc

–– – 0.85 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product
(I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain h
(I C= –1.0mAdc, V

= –5.0Vdc, f = 1.0 kHz)

CE

Noise Figure N F dB
(I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10kΩ, f = 1.0 kHz) — 2.0

(I C = –100µAdc, V CE= –5.0 Vdc,Rs=3.0kΩ, f = 1.0 kHz) — 2.0

f

T

C

obo

fe

40 — MHz

— 4.0 pF
250 900 —

––

M17–2/6

TYPICAL NOISE CHARACTERISTICS

(V CE = – 5.0 Vdc, T A = 25°C)

10

BANDWIDTH = 1.0 Hz

7.0

IC=10 µA

5.0

30µA

3.0

1.0mA

2.0

, NOISE VOLTAGE (nV)

n

e

1.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

100µA

300µA

R S 0

LESHAN RADIO COMPANY, LTD.

MMBT5087LT1

10.0

~

~

7.0

5.0

3.0

2.0

IC=1.0mA

300µA

1.0

0.7

0.5

0.3

, NOISE CURRENT (pA)

n

0.2

I

0.1
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

100µA

30µA

10µA

BANDWIDTH = 1.0 Hz

~

8

R

~

S

f, FREQUENCY (Hz)

Figure 1. Noise Voltage

1.0M
500k

200k
100k

50k
20k

0.5 dB

10k

5.0k

2.0k

1.0k
500

, SOURCE RESIST ANCE ( Ω )

S

R

200
100

10 20 30 50 70 100 200 300 500 700 1.0K

1.0 dB

I C , COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

Figure 3. Narrow Band, 100 Hz

1.0M
500k

200k
100k

50k
20k
10k

5.0k

2.0k

1.0k
500

, SOURCE RESIST ANCE ( Ω )

S

200

R

100

10 20 30 50 70 100 200 300 500 700 1.0K

0.5dB

10 Hz to 15.7kHz

I C , COLLECTOR CURRENT (µA)

Figure 5. Wideband

NOISE FIGURE CONTOURS

(V CE = – 5.0 Vdc, T A = 25°C)

1.0M
500k

200k
100k

50k
20k
10k

5.0k

2.0k

2.0dB

3.0 dB

5.0 dB

1.0dB

2.0dB

3.0 dB

5.0 dB

1.0k
500

, SOURCE RESIST ANCE ( Ω )

S

R

200
100

10 20 30 50 70 100 200 300 500 700 1.0K

Noise Figure is Defined as:

NF = 20 log 10 (

e n= Noise Voltage of the Transistor referred to the input. (Figure 3)
I

= Noise Current of the Transistor referred to the input. (Figure 4)

n

K = Boltzman’s Constant (1.38 x 10
T = Temperature of the Source Resistance (°K)
R s= Source Resistance ( Ω )

f, FREQUENCY (Hz)

Figure 2. Noise Current

BANDWIDTH = 1.0 Hz

0.5 dB

1.0dB

2.0 dB

3.0 dB

5.0 dB

I C , COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

2

2 + 4KTRS + I

e

n

–––––––––––––––)

4KTR

2

R

1/ 2

n

S

S

–23

j/°K)

M17–3/6

LESHAN RADIO COMPANY, LTD.

TYPICAL ST A TIC CHARACTERISTICS

MMBT5087LT1

1.0

0.8

0.6

0.4

0.2

0

, COLLECTOR– EMITTER VOL T AGE (VOLTS)

CE

0.002 0.0050.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20

V

I C= 1.0 mA

10 mA

50 mA

100 mA

I B , BASE CURRENT (mA)

Figure 6. Collector Saturation Region

1.4

T J=25°C

1.2

1.0

0.8

V

@ I C /I B = 10

BE(sat)

0.6

0.4

V

BE(on)

@ V CE= 1.0 V

V, VOLTAGE (VOLTS)

0.2

V

@ I C /I B = 10

CE(sat)

0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

I C , COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

T A= 25°C

100

T A = 25°C
PULSE WIDTH =300 µs

80

DUTY CYCLE<2.0%

350µA

I B= 400 µA

300µA

60

40

20

, COLLECTOR CURRENT (mA)

C

I

0

0 5.0 10 15 20 25 30 35 40

200 µA

100 µA

V CE , COLLECTOR–EMITTER VOL T AGE (VOL TS)

Figure 7. Collector Characteristics

1.6

*APPLIES for I C / I B<

0.8

∗ θ VC for V

0

CE(sat)

h

/ 2

FE

25°C to 125°C

–55°C to 25°C

–0.8

25°C to 125°C

–1.6

θ VB for V

–2.4

, TEMPERATURE COEFFICIENTS (mV/°C)

V

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

θ

BE

–55°C to 25°C

I C , COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

250 µA

150 µA

50µA

M17–4/6

LESHAN RADIO COMPANY, LTD.

TYPICAL DYNAMIC CHARACTERISTICS

MMBT5087LT1

500
300
200

100

70
50

30

t, TIME (ns)

20

10

7.0

5.0

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

td @ V

BE(off)

= 0.5 V

t

r

V CC= 3.0 V
IC /I B= 10
T J= 25°C

I C , COLLECTOR CURRENT (mA)

Figure 10. Turn–On T ime

500

T J = 25°C

300

200

V CE=20 V

5.0 V

1000

700
500

300
200

100

70

t, TIME (ns)

50

30
20

10

–1.0 –2.0 –3.0 –5.0 –7.0 –1 0 –20 –30 –50 –70 –100

t

s

t

f

I C , COLLECTOR CURRENT (mA)

Figure 11. Turn–Off Time

10.0

7.0

5.0

3.0

C

ib

VCC= –3.0 V
IC /I B= 10
IB1=I

B2

T J= 25°C

T J= 25°C

100

70

50

, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)

T

f

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

I C , COLLECTOR CURRENT (mA)

Figure 12. Current–Gain — Bandwidth Product

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

r ( t ) TRANSIENT THERMAL RESISTANCE(NORMALIZED)

D = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

2.0

C, CAPACITANCE (pF)

1.0

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

V R , REVERSE VOL TAGE (VOL TS)

Figure 13. Capacitance

P

(pk)

FIGURE 16

t

1

t

DUTY CYCLE, D = t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1 (SEE AN–569)

= r(t) • R

Z

2

θJA(t)

T

J(pk)

– T A = P

1

θJA

(pk) Z θJA(t)

t, TIME (ms)

Figure 14. Thermal Response

/ t

C

ob

2

M17–5/6

4

10

V

= 30 V

CC

3

10

I

2

10

1

10

CEO

I

CBO

AND

0

10

–1

, COLLECTOR CURRENT (nA)

10

C

I

–2

10

–4 –2 0 +20 +40 +60 +80 +100 +120 +140 +160

I

@ V

BE(off)

= 3.0 V

CEX

T J , JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

LESHAN RADIO COMPANY, LTD.

MMBT5087LT1

DESIGN NOTE: USE OF THERMAL RESPONSE DAT A

A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find Z
the steady state value R
Example:
Dissipating 2.0 watts peak under the following conditions:
t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P
For more information, see AN–569.

, multiply the value obtained from Figure 14 by

θJA(t)

(pk)

x R

.

θJA

= 0.22 x 2.0 x 200 = 88°C.

θJA

M17–6/6