Page 1
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low equivalent on-resistance
MARKING: 491
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
MMBT491
NPN Silicon
General Purpose Transistor
Collector
3
1
Base
2
Emitter
A
L
Top View
1
3
B
2
GV
K
S
D
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J
H
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
C
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Parameter Symbol Ratings
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
80 V
CBO
60 V
CEO
5 V
EBO
Unit
Collector Current -Continuous IC 1 A
Collector Power Dissipation PC 500 mW
Junction & Storage temperature TJ, T
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter Symbol Min. Max. Unit Test Conditions
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency f T 150 MHz VCE = 10V, IC = 50mA, f = 100MHz
Output Capacitance COB - 10 pF VCB = 10V, f = 1.0MHz, IE = 0
Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%.
80 - V IC=100μA,IE=0
(BR)CBO
1
60 - V IC=10mA,IB=0
(BR)CEO
5 - V IE=100μA,IC=0
(BR)EBO
- 0.1 μA VCB=60V, IE=0
CBO
- 0.1 μA VEB=4V, IC=0
EBO
h
100 - VCE=5V,IC=1mA
FE(1)
1
h
100 300 VCE=5V,IC=500mA
FE(2)
1
h
80 - VCE=5V,IC=1A
FE(3)
1
h
30 - VCE=5V,IC=2A
FE(4)
1
V
- 0.25 V IC=500mA, IB=50mA
CE(sat)1
1
- 0.5 V IC=1A, IB=100mA
V
CE(sat)2
1
V
- 1.1 V IC=1A, IB=100mA
BE(sat)
1
- 1 V IC=1A, VCE=5V
V
BE
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2002 Rev. A Page 1 of 2
Page 2
V
Elektronische Bauelemente
CHARACTERISTIC CURVES
MMBT491
General Purpose Transistor
NPN Silicon
0.6
+ 25 C
0.5
0.4
0.3
0.2
0.1
0
1mA
IC / IB = 10
I
C
/ IB = 50
100mA10mA
10A1A
IC-Collector Current
400
300
200
100
VCE = 5 V
+ 100 C
+ 25 C
- 55 C
CE(sat )
V
vs I
C
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
0.8
0.6
0.4
0.2
1mA
IC / IB = 10
- 55 C
+ 25 C
+ 100 C
C
/ IB = 10
I
IC- Collector Current
CE(sat )
V
vs
I
C
- 55 C
+ 25 C
+ 100 C
10A1A10mA 100mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1mA
1mA
0
100mA10mA
-C
ollector Current
I
C
hFEvs
CE
= 5 V
V
IC-
Collector Current
BE(on )
V
I
100mA10mA
vs I
1A
10A
C
- 55 C
+ 25 C
+ 100 C
1A
10A
C
1mA
10
1
0.1
0.01
0.1V 10V 100
10mA
100mA 1A 10A
IC-Collector Current
V
BE(sat )
DC
1 s
100 ms
10 ms
1 ms
100 s
1V
V
- C
ollector Emitter Voltage (V)
C
E
Safe Operat ing Area
vs
I
C
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
01-June-2002 Rev. A Page 2 of 2
Loading...