Page 1
MMBT489LT1G
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
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Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Rating Symbol Max Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
@TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation (Note 2)
@TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Device Dissipation (Single Pulse < 10 s) P
Junction and Storage Temperature Range TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
= 25°C)
A
CEO
CBO
EBO
C
CM
P
D
R
q
JA
P
D
R
q
JA
Dsingle
30 Vdc
50 Vdc
5.0 Vdc
1.0 A
2.0 A
310
2.5
403 °C/W
710
5.7
176 °C/W
575 mW
−55 to +150 °C
stg
mW
mW/°C
mW
mW/°C
30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
MARKING DIAGRAM
N3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
SOT−23 (TO−236)
CASE 318
STYLE 6
N3 M G
G
1
†
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
(Pb−Free)
3000/Tape & ReelMMBT489LT1G SOT−23
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
MMBT489LT1/D
Page 2
MMBT489LT1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
= 10 mAdc, IB = 0)
C
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Collector−Emitter Cutoff Current
(V
= 30 Vdc)
CES
Emitter Cutoff Current
(VEB = 4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
Collector − Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
Base − Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
Base − Emitter Turn−on Voltage (Note 3)
(IC = 1.0 mA, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
Output Capacitance
(f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
obo
30 −
50 −
5.0 −
− 0.1
− 0.1
− 0.1
300
300
200
−
−
−
−
−
900
−
0.200
0.125
0.075
1.1
− 1.1
T
100 −
− 15
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
MHz
pF
V
V
V
1.0
(V)
CE
V
0.9
0.8
0.7
0.6
0.5
0.4
IC = 1 A
IC = 2 A
0.3
0.2
0.1
0
0.001 0.20.01 0.1
IC = 500 mA
IC = 100 mA
Ib (A)
Figure 1. VCE versus I
1.0
0.9
0.8
0.7
0.6
(V)
0.5
CE
V
0.4
0.3
0.2
Ic/Ib = 100
Ic/Ib = 10
0.1
0
0.001 20.01 0.1
1
Ic (A)
b
Figure 2. VCE versus I
c
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2
Page 3
MMBT489LT1G
)
800
700
+125°C
600
500
+25°C
FE
400
h
−55°C
300
200
100
0
0.001 20.01 0.1
Figure 3. hFE versus I
1.2
1.0
0.8
(V)
0.6
BE
V
0.4
Ic (A)
VCE = 5 V
c
Ic/Ib = 10
1
Ic/Ib = 100
1.2
1.0
−55°C
0.8
(V)
+25°C
0.6
BE(on)
V
+125°C
0.4
0.2
0
0.001 20.01 0.1
Figure 4. V
10
1
0.1
Ic (A)
BE(on)
versus I
VCE = 5 V
1
c
1 ms
10 ms
100 ms
COLLECTOR CURRENT (A)
0.2
0
0.001 20.01 0.1
1
C
I
0.01
Ic (A)
Figure 5. V
0.1
0.20.5
BE(sat
versus I
c
1.0E+00
0.05
0.02
1.0E-01
D = 0.01
, (t)
thja
R
1.0E-02
r(t)
1.0E-03
1E-05 0.01 0.1 1.0
0.0001 0.001
t, TIME (sec)
Figure 7. Normalized Thermal Response
1 s
SINGLE PULSE T
amb
= 25°C
dc
0.1 100110
VCE (V)
Figure 6. Safe Operating Area
10
100 1000
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3
Page 4
MMBT489LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 6:
PIN 1. BASE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
2. EMITTER
3. COLLECTOR
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
ǒ
inches
mm
Ǔ
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MMBT489LT1/D
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