Datasheet mmbt4403wt1 Datasheet

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Page 1

MMBT4403WT1G

Switching Transistor

PNP Silicon

Features

 Moisture Sensitivity Level: 1  ESD Rating: Human Body Model; 4 kV,

Machine Model; 400 V

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

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COLLECTOR

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector -- Emitter Voltage V

Collector -- Base Voltage V

Emitter -- Base Voltage V

Collector Current -- Continuous I

CEO

CBO

EBO

-- 4 0 Vdc

-- 5 . 0 Vdc

--600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR--5 Board

=25C

Thermal Resistance,

Junction--to--Ambient

Junction and Storage Temperature TJ,T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

stg

150 mW

833 C/W

-- 55 to +150 C

EMITTER

SC--70

CASE 419

STYLE 3

MARKING DIAGRAM

2T MG

2T = Specific Device Code M = Date Code G = Pb--Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending upon

manufacturing location.

 Semiconductor Components Industries, LLC, 2010

October, 2010 -- Rev. 3

ORDERING INFORMATION

Device Package Shipping

MMBT4403WT1G SC--70

(Pb--Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

Tape & Reel

MMBT4403WT1/D

†

3000 /

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MMBT4403WT1G

ELECTRICAL CHARACTERISTICS (T

=25C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector -- Emitter Breakdown Voltage (Note 1) (I

=--1.0mAdc,IB=0) V

Collector -- Base Breakdown Voltage (IC=--0.1mAdc,IE=0) V

Emitter -- Base Breakdown Voltage (IE=--0.1mAdc,IC=0) V

Base Cutoff Current (VCE=--35Vdc,VEB=--0.4Vdc) I

Collector Cutoff Current (VCE=--35Vdc,VEB=--0.4Vdc) I

ON CHARACTERISTICS

DC Current Gain

=--0.1mAdc,VCE=--1.0Vdc)

=--1.0mAdc,VCE=--1.0Vdc)

=--10mAdc,VCE=--1.0Vdc)

= --150 mAdc, VCE=--2.0Vdc)(Note1)

= --500 mAdc, VCE=--2.0Vdc)(Note1)

Collector -- Emitter Saturation Voltage (Note 1)

= --150 mAdc, IB=--15mAdc)

= --500 mAdc, IB=--50mAdc)

Base -- Emitter Saturation Voltage (Note 1)

= --150 mAdc, IB=--15mAdc)

= --500 mAdc, IB=--50mAdc)

SMALL-- SIGNAL CHARACTERISTICS

Current -- Gain -- Bandwidth Product (I

=--20mAdc,VCE= --10 Vdc, f = 100 MHz) f

Collector--Base Capacitance (VCB=--10Vdc,IE=0,f=1.0MHz) C

Emitter--Base Capacitance (VBE=--0.5Vdc,IC=0,f=1.0MHz) C

Input Impedance (IC=--1.0mAdc,VCE= --10 Vdc, f = 1.0 kHz) h

Voltage Feedback Ratio (IC=--1.0mAdc,VCE= --10 Vdc, f = 1.0 kHz) h

Small -- Signal Current Gain (IC=--1.0mAdc,VCE= --10 Vdc, f = 1.0 kHz) h

Output Admittance (IC=--1.0mAdc,VCE= --10 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Delay Time

Rise Time t

Storage Time

Fall Time t

(VCC=--30Vdc,VEB=--2.0Vdc, I

= --150 mAdc, IB1=--15mAdc)

(VCC=--30Vdc,IC= --150 mAdc,

B1=IB2

=--15mAdc)

1. Pulse T est: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Symbol Min Max Unit

(BR)CEO

(BR)CBO

(BR)EBO

BEV

CEX

CE(sat )

BE(sat)

-- 4 0 -- Vdc

-- 5 . 0 -- Vdc

-- -- 0 . 1 mAdc

60 100 100

300

Vdc

-- 0 . 4

--0.75

Vdc

--0.75

--0.95

-- 1 . 3

200 -- MHz

-- 8.5 pF

-- 30 pF

1.5 15 kΩ

0.1 8.0 X10

60 500 --

1.0 100 mmhos

-- 15

-- 20

-- 225

-- 30

-- 4

+2 V

-- 1 6 V

<2ns

10 to 100 ms, DUTY CYCLE = 2%

SWITCHING TIME EQUI

-- 3 0 V

200 Ω

1.0 kΩ C

* < 10 pF

Scope rise time < 4.0 ns

LENT TEST CIRCUIT

<20ns

+14 V

-- 1 6 V

1.0 to 100 ms, DUTY CYCLE = 2%

1.0 kΩ

+4.0V

-- 3 0 V

200 Ω

* < 10 pF

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn--On Time Figure 2. Turn--Off Time

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MMBT4403WT1G

TRANSIENT CHARACTERISTICS

25C 100C

7.0

5.0

CAPACITANCE (pF)

2.0

0.1 2.0 5.0 10 20

0.7 7.0

3.01.00.50.30.2

REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitances

100

t, TIME (ns)

7.0

5.0 10 20 50 70 100 200 300 50030

IC, COLLECTOR CURRENT (mA)

IC/IB=10

tr@VCC=30V t

r@VCC

d@VBE(off)

=10V

=2V =0

7.0

5.0

V I

C/IB

=30V

=10

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

0.1 10 20 50 70 100 200

300 500

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100

, RISE TIME (ns)

7.0

5.0 10 20 50 70 100 200 300 50030

IC, COLLECTOR CURRENT (mA)

VCC=30V I

=10

C/IB

Figure 5. Turn--On Time

200

100

, STORAGE TIME (ns)

10 20 50 70 100 200 300 50030

IC/IB=20

IB1=I

ts =ts-- 1 / 8 t

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

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Figure 6. Rise Time

IC/IB=10

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MMBT4403WT1G

SMALL--SIGNAL CHARACTERISTICS NOISE FIGURE

=--10Vdc,TA=25C; Bandwidth = 1.0 Hz

NF, NOISE FIGURE (dB)

IC=1.0mA,RS= 430 Ω I

= 500 mA, RS= 560 Ω

=50mA, RS=2.7kΩ

= 100 mA, RS=1.6kΩ

RS= OPTIMUM SOURCE RESISTANCE

0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100

f, FREQUENCY (kHz)

Figure 8. Frequency Effects

f=1kHz

NF, NOISE FIGURE (dB)

50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k

IC=50mA

100 mA 500 mA

1.0 mA

RS, SOURCE RESISTANCE (OHMS)

Figure 9. Source Resistance Effects

h PARAMETERS

=10Vdc,f=1.0kHz,TA=25C

This group ofgraphs illustrates the relationship between h

and other“h” parametersfor this series of transistors. To obtain

these curves, a high--gain and a low--gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.

1000

700

500

300

200

, CURRENT GAIN

100

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

-- 4

5.0

2.0

1.0

0.5

TAGE FEEDBACK RATIO (X 10 )

0.2

h,VO

0.1

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2

5.0 7.0

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain

MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2

5.0 7.0

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio

100 k

50 k

20 k

10 k

, INPUT IMPEDANCE (OHMS)

500

200

100

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

IC, COLLECTOR CURRENT (mAdc)

MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2

Figure 11. Input Impedance

500

100

5.0

h , OUTPUT ADMITTANCE ( mhos)

2.0

1.0

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

IC, COLLECTOR CURRENT (mAdc)

MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2

Figure 13. Output Admittance

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MMBT4403WT1G

STATIC CHARACTERISTICS

3.0

2.0

1.0

0.7

0.5

0.3

h , NORMALIZED CURRENT GAIN

0.2

0.1

1.0

0.8

VCE=1.0V V

=10V

TJ= 125C

25C

-- 5 5 C

0.5 2.0 3.0 10 50 700.2 0.3

IC, COLLECTOR CURRENT (mA)

1001.00.7 50030205.0 7.0

200 300

Figure 14. DC Current Gain

0.6

0.4

0.2

V , COLLECTOR-- EMITTER VOLTAGE (VOLTS)

0.005

1.0

0.8

TS)

0.6

TAGE (VO

0.4

0.2

0.1 0.2 0.5

IC=1.0mA

TJ=25C

10 mA 100 mA

0.1

0.070.050.030.020.01

BE(sat)@IC/IB

BE(sat)@VCE

CE(sat)@IC/IB

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

=10

=10V

=10

0.5 2.0 3.0 500.2 0.3

IB, BASE CURRENT (mA)

1.00.7 5.0 7.0

Figure 15. Collector Saturation Region

0.5

1.0

1.5

COEFFICIENT (mV/ C)

2.0

500100

200

500

2.5

0.1 0.2 0.5

10 20 30

θVCfor V

CE(sat)

θVSfor V

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

500 mA

50 100 500200

Figure 16. “On” Voltages

Figure 17. Temperature Coefficients

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Page 6

0.05 (0.002)

MMBT4403WT1G

PACKAGE DIMENSIONS

SC--70 (SOT--323)

CASE 419 -- 04

ISSUE N

SOLDERING FOOTPRINT*

0.65

0.025

NOTES:

1. DIM ENSIO NING AND TOLER ANCIN G PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000 A2 0.70 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 3:

PIN 1. BASE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.38

0.20 0.56 0.008 0.022

2.00 2.10 2.40 0.079 0.083 0.095

2. EMITTER

3. COLLE CTOR

0.65

0.025

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.015

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1



inches



*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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