Page 1
tm
MMBT4403K
PNP Epitaxial Silicon Transistor
Switching Transistor
MMBT4403K PNP Epitaxial Silicon Transistor
November 2006
3
2
SOT-23
1
Marking
2TK
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J, TSTG
Electrical Characteristics T
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -600 mA
Collector Power Dissipation 350 mW
Operating Junction and Storage Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
BL
I
CEX
h
FE
V
CE (sat)
V
BE (sat)
f
T
C
ob
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = -0.1mA, IE = 0 -40 V
Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -40 V
Emitter-Base Breakdown Voltage IE = -0.1mA, IC = 0 -5 V
Base Cut-off Current V
Collector Cut-off Current V
DC Current Gain V
Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA
Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA
Current Gain Bandwidth Product IC = -20mA, V
Output Capacitance V
Turn On Time V
Turn Off Time V
= -35V, V
CE
= -35V, V
CE
= -1V, IC = -0.1mA
CE
V
= -1V, IC = -1.0mA
CE
V
= -1V, IC = -10mA
CE
V
= -2V, IC = -150mA *
CE
V
= -2V, IC = -500mA *
CE
= -0.4V -0.1 µA
EB
= -0.4V -0.1 µA
EB
30
60
100
100
300
20
-0.4
IC = -500mA, IB = -50mA
-0.75
-0.75 -0.95
IC = -500mA, IB = -50mA
= -10V, f = 100MHz 200 MHz
CE
= -10V, IE = 0, f = 140KHz 8.5 pF
CB
= -30V, V
CC
IC = -150mA, I
= -30V, IC = -150mA
CC
I
= IB2= -15mA
B1
= -2V
BE
= -15mA
B1
-1.3
35 ns
255 ns
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MMBT4403K Rev. C
Page 2
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
MMBT4403K PNP Epitaxial Silicon Transistor
400
350
300
250
200
hfe, Current Gain
150
100
50
0
0.1 1 10 100
0oC
75oC
25oC
100oC
125oC
50oC
Collector Current, [mA]
Vce=5V
Ic=10Ib
0.4
125oC
100oC
0.3
75oC
50oC
0.2
0.1
25oC
0oC
Vce(sat), Saturation Current,[V]
0.0
110100
Collector Current, [mA]
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current
1.0
Ic=10 Ib
0.9
0.8
0.7
0.6
0.5
0.4
Vbe(sat), Saturation Current,[V]
0.3
1 10 100
0oC
25oC
Collector Cu rre n t, [m A ]
75oC
50oC
100oC
125oC
VCB = 35V
10
Leakage current of Collector - Base(nA)
1
25 50 75 100 125 150
Temperature, ['C]
Figure 5. Collector-Base Capacitance Figure 6. Power Dissipation vs
Ambient Temperature
100
10
[pF], Capacitance
Ob
C
1
-1 -10 -1 00
MMBT4403K Rev. C
VCB[V], Collector-Base Voltage
f = 140KHz
I
= 0
E
0.4
0.3
0.2
- Power Dissipation (W)
0.1
D
P
0.0
0 25 50 75 100 125 150
2 www.fairchildsemi.com
Temperature, [ OC]
Page 3
Mechanical Dimensions
0
F
3
N
0.40
±0.03
MMBT4403K PNP Epitaxial Silicon Transistor
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
MMBT4403K Rev. C
Dimensions in Millimeters
3 www.fairchildsemi.com
Page 4
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONV EY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
MMBT4403K PNP Epitaxial Silicon Transistor
MMBT4403K PNP Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reaso nably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Prod uction This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairch ild
Obsolete Not In Production This datasheet contains specifications on a product
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to im prove
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference informatio n only.
MMBT4403K Rev. C
Rev. I20
4 www.fairchildsemi.com
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