Datasheet mmbt4401wt1 Datasheet

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MMBT4401WT1G

Switching Transistor

NPN Silicon

Features

 Moisture Sensitivity Level: 1  ESD Rating: Human Body Model; 4 kV,

Machine Model; 400 V

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

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COLLECTOR

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector -- Emitter Voltage V

Collector -- Base Voltage V

Emitter -- Base Voltage V

Collector Current -- Continuous I

CEO

CBO

EBO

40 Vdc

60 Vdc

6.0 Vdc

600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR--5 Board

=25C

Thermal Resistance,

Junction--to--Ambient

Junction and Storage Temperature TJ,T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

stg

150 mW

833 C/W

-- 55 to +150 C

EMITTER

SC-- 70 (SOT--323)

CASE 419

STYLE 3

MARKING DIAGRAM

2X MG

(Note: Microdot may be in either location)

*Date Code orientation may vary depending upon

manufacturing location.

ORDERING INFORMATION

Device Package Shipping

MMBT4401WT1G SC--70

(Pb--Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000/Tape & Reel

†

 Semiconductor Components Industries, LLC, 2010

October, 2010 -- Rev. 2

1 Publication Order Number:

MMBT4401WT1/D

Page 2

MMBT4401WT1G

ELECTRICAL CHARACTERISTICS (T

=25C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector -- Emitter Breakdown Voltage (Note 1) (I

=1.0mAdc,IB=0) V

Collector -- Base Breakdown Voltage (IC=0.1mAdc,IE=0) V

Emitter -- Base Breakdown Voltage (IE=0.1mAdc,IC=0) V

Base Cutoff Current (VCE=35Vdc,VEB=0.4Vdc) I

ON CHARACTERISTICS (Note 1)

DC Current Gain

=0.1mAdc,VCE=1.0Vdc)

=1.0mAdc,VCE=1.0Vdc)

=10mAdc,VCE=1.0Vdc)

= 150 mAdc, VCE=1.0Vdc)

= 500 mAdc, VCE=2.0Vdc)

Collector -- Emitter Saturation Voltage

= 150 mAdc, IB=15mAdc)

= 500 mAdc, IB=50mAdc)

Base -- Emitter Saturation Voltage

= 150 mAdc, IB=15mAdc)

= 500 mAdc, IB=50mAdc)

Collector Cutoff Current (VCE=35Vdc,VEB=0.4Vdc) I

SMALL-- SIGNAL CHARACTERISTICS

Current -- Gain -- Bandwidth Product (I

=20mAdc,VCE= 10 Vdc, f = 100 MHz) f

Collector--Base Capacitance (VCB=5.0Vdc,IE=0,f=1.0MHz) C

Emitter--Base Capacitance (VEB=0.5Vdc,IC=0,f=1.0MHz) C

Input Impedance (IC=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz) h

Voltage Feedback Ratio (IC=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz) h

Small -- Signal Current Gain (IC=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz) h

Output Admittance (IC=1.0mAdc,VCE= 10 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Delay Time

Rise Time t

Storage Time

Fall Time t

(VCC=30Vdc,VEB=2.0Vdc,

= 150 mAdc, IB1=15mAdc)

(VCC=30Vdc,IC= 150 mAdc,

B1=IB2

=15mAdc)

1. Pulse T est: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Symbol Min Max Unit

(BR)CEO

(BR)CBO

(BR)EBO

BEV

CE(sat )

BE(sat)

CEX

40 -- Vdc

60 -- Vdc

6.0 -- Vdc

-- 0.1 mAdc

-20 40 80

100

300

Vdc

0.4

0.75

Vdc

0.75

0.95

1.2

-- 0.1 mAdc

250 -- MHz

-- 6.5 pF

-- 30 pF

1.0 15 kΩ

0.1 8.0 X10

40 500 --

1.0 30 mmhos

-- 15

-- 20

-- 225

-- 30

-- 4

+16 V

-- 2 . 0 V

1.0 to 100 ms, DUTY CYCLE  2.0%

<2.0ns

SWITCHING TIME EQUI

+30 V

200 Ω

1.0 kΩ C

* < 10 pF

Scope rise time < 4.0 ns

LENT TEST CIRCUITS

+16 V

-- 1 4 V

1.0 to 100 ms, DUTY CYCLE  2.0%

<20ns

1.0 kΩ

-- 4 . 0 V

+30 V

200 Ω

* < 10 pF

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn--On Time Figure 2. Turn--Off Time

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MMBT4401WT1G

TRANSIENT CHARACTERISTICS

25C 100C

obo

7.0

5.0

CAPACITANCE (pF)

3.0

2.0

0.1 2.0 5.0 10 20

3.01.00.50.30.2

REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitances

100

tr@VCC=30V t

r@VCC

d@VEB

IC/IB=10

=10V

=2.0V =0

30 50

7.0 V

=30V

C/IB

=10

5.0

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

0.1

10 20 50 70 100 200

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100

t, TIME (ns)t

300 500

VCC=30V I

=10

C/IB

7.0

5.0 10 20 50 70 100 200 300 50030

300

200

100

, STORAGE TIME (ns) t, TIME (ns)

10 20 50 70 100 200 300 50030

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn--On Time

ts =ts-- 1 / 8 t IB1=I IC/IB=10to20

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

7.0

5.0 10 20 50 70 100 200 300 50030

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise and Fall Times

100

IC/IB=20

VCC=30V I

B1=IB2

,FALLTIME(ns)

IC/IB=10

7.0

5.0 10 20 50 70 100 200 300 50030

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

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MMBT4401WT1G

SMALL--SIGNAL CHARACTERISTICS NOISE FIGURE

=10Vdc,TA=25C; Bandwidth = 1.0 Hz

IC=1.0mA,RS= 150 Ω I

= 500 mA, RS= 200 Ω

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

= 100 mA, RS=2.0kΩ

=50mA, RS=4.0kΩ

0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100 f, FREQUENCY (kHz)

RS=OPTIMUM

RS = SOURCE RS = RESISTANCE

Figure 9. Frequency Effects

f=1.0kHz

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

IC=50mA I

= 100 mA

= 500 mA

=1.0mA

RS, SOURCE RESISTANCE (OHMS)

100 k50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

Figure 10. Source Resistance Effects

h PARAMETERS

=10Vdc,f=1.0kHz,TA=25C

This group ofgraphs illustrates the relationship between h

and other“h” parametersfor this series of transistors. To obtain

these curves, a high--gain and a low--gain unit were selected from the MMBT4401WT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.

300

200

50 k

20 k

MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

100

, CURRENT GAIN

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

-- 4

7.0

5.0

3.0

2.0

1.0

0.7

TAGE FEEDBACK RATIO (X 10 )

0.5

0.3

h,VO

0.2

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

IC, COLLECTOR CURRENT (mA)

5.0 7.0

10 k

5.0 k

2.0 k

, INPUT IMPEDANCE (OHMS)

1.0 k

500

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

IC, COLLECTOR CURRENT (mA)

Figure 12. Input Impedance

100

5.0

2.0

h , OUTPUT ADMITTANCE ( mhos)

1.0

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

IC, COLLECTOR CURRENT (mA)

MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2

Figure 13. Voltage Feedback Ratio

Figure 14. Output Admittance

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Page 5

3.0

2.0

VCE=1.0V V

=10V

MMBT4401WT1G

STATIC CHARACTERISTICS

TJ= 125C

1.0

0.7

0.5

0.3

h , NORMALIZED CURRENT GAIN

0.2

0.1

0.5 2.0 3.0 10 50 700.2 0.3

IC, COLLECTOR CURRENT (mA)

25C

-- 5 5 C

1001.00.7 50030205.0 7.0

200 300

Figure 15. DC Current Gain

1.0

0.8

0.6

0.4

0.2

IC=1.0mA

10 mA 100 mA

TJ=25C

500 mA

V , COLLECTOR-- EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

VOLTAGE (VOLTS)

0.2

0.1 0.2 0.5

TJ=25C

0.070.050.030.020.01

BE(sat)@IC/IB

VBE@VCE=10V

CE(sat)@IC/IB

=10

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 17. “On” Voltages

0.1

0.5 2.0 3.0 500.2 0.3

IB, BASE CURRENT (mA)

1.00.7 5.0 7.0

Figure 16. Collector Saturation Region

+0.5

=10

500100

200

500

-- 0 . 5

-- 1 . 0

-- 1 . 5

COEFFICIENT (mV/ C)

-- 2 . 0

-- 2 . 5

0.1 0.2 0.5

10 20 30

θVCfor V

CE(sat)

θVBfor V

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

50 100 500200

Figure 18. Temperature Coefficients

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Page 6

0.05 (0.002)

MMBT4401WT1G

PACKAGE DIMENSIONS

SC--70 (SOT--323)

CASE 419 -- 04

ISSUE N

NOTES:

1. DIM ENSIO NING AND TOLER ANCIN G PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX M IN

A1 0.00 0.05 0.10 0.000 A2 0.70 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004

D 1.80 2.10 2.20 0.071

E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 3:

PIN 1. BASE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.38

0.20 0.56 0.008 0.022

2.00 2.10 2.40 0.079

2. EMITTER

3. COLLE CTOR

SOLDERING FOOTPRINT*

0.65

0.025

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.015

0.083 0.095

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1



inches



*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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