Datasheet mmbt4401w Datasheet

Elektronische Bauelemente

MMBT4401W

NPN Silicon

Switching Transistor

RoHS Compliant Product

COLLECTOR

3

1

BASE

1

2

EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation

Alumina Substrate,

Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature TJ, T

(2)

TA = 25°C

DEVICE MARKING

MMBT4401W = K3X, 2X

3

2

(1)

CEO CBO EBO

P

R

P

R

A

L

Top View

GV

D

40 Vdc 60 Vdc

6.0 Vdc

C

D

q

JA D

q

JA

stg

600 mAdc

200

1.8 556 °C/W 200

2.4 417 °C/W

–55 to +150 °C

S

B

C

H

K

mW

mW/°C

mW

mW/°C

J

SOT-323

Dim Min Max

A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420

All Dimension in mm

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

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01-Jun-2002 Rev. A

(3)

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BEV

I

CEX

Any changing of specification will not be informed individual

40 —

60 —

6.0 —

— 0.1

Vdc

µAdc

Page 1 of 5

(

CC

,

EB

,

ns

(

CC

,

C

,

ns

Elektronische Bauelemente

MMBT4401W

NPN Silicon

Switching Transistor

ELECTRICAL CHARACTERISTICS

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

Base–Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

(3)

(continued) (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time Rise Time Storage Time Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

(VCC = 30 Vdc, VEB = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

h

FE

V

CE(sat)

V

BE(sat)

f

C

h

t t t

oe

t

T

cb

eb

ie

re

fe

d

s

Vdc

MHz

kΩ

X 10

m

mhos

—

pF

–4

—

20 40 80

100

40

— —

0.75 —

250 —

— 6.5

— 30

1.0 15

0.1 8.0

40 500

1.0 30

— 15

r

f

— 20 — 225 — 30

— — —

300

—

0.4

0.75

0.95

1.2

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V

+16 V 0

–2.0 V

1.0 to 100 DUTY CYCLE

< 2.0 ns

µ

s,

1.0 k

≈

2.0%

200

Ω

CS* < 10 pF

Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

0

–14 V

1.0 to 100 DUTY CYCLE

< 20 ns

µ

s,

1.0 k

≈

2.0%

Ω

–4.0 V

Figure 1. T urn–On Time Figure 2. T urn–Off Time

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01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

+30 V

200

Ω

CS* < 10 pF

Page 2 of 5

Reverse Voltage (V)

IC, Collector Current (mA)

', Storage Time (ns)

IC, Collector Current (mA)

Elektronische Bauelemente

TRANSIENT CHARACTERISTICS

25

°

C 100°C

MMBT4401W

NPN Silicon

Switching Transistor

30

20

C

10

7.0

5.0

Capacitance (pF)

3.0

2.0

0.1 2.0 5.0 10

3.01.00.50.30.2

Figure 3. Capacitances

100

70 50

30

20

t, Time (ns)

obo

IC/IB = 10

tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0

20

C

cb

30 50

10

7.0 VCC = 30 V

5.0

IC/IB = 10

3.0

2.0

1.0

0.7

0.5

Q, Charge (nC)

0.3

0.2

0.1

10 20 50 70 100

30

Figure 4. Charge Data

100

70 50

30

20

t, Time (ns)

t

r

t

f

Q

T

Q

A

200

300 500

VCC = 30 V IC/IB = 10

10

7.0

5.0 10 20 50 70 100

300

200

100

70

s

t

50

30

10 20 50 70 100

10

7.0

30

Figure 5. Turn–On Time

ts′ IB1 = I IC/IB = 10 to 20

200 300 500

= ts – 1/8 t

f

B2

5.0 10 20 50 70 100

30

Figure 6. Rise and Fall Times

100

70 50

30 20

IC/IB = 10

IC/IB = 20

tf', Fall Time (ns)

10

7.0

30

200 300

500

5.0 10 20 50 70 100

30

Figure 7. Storage Time Figure 8. Fall Time

200 300 500

VCC = 30 V IB1 = I

B2

200 300

500

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01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

Page 3 of 5

10

NF, Noise Figure (dB)

RS, Source Resistance (OHMS)

I

, Collector Current (mA)

IC, Collector Current (mA)

f, Frequency (kHz)

IC, Collector Current (mA)

8.0

6.0

Elektronische Bauelemente

SMALL–SIGNAL CHARACTERISTICS

IC = 1.0 mA, RS = 150 IC = 500 µA, RS = 200 IC = 100 µA, RS = 2.0 k IC = 50 µA, RS = 4.0 k

Ω

RS = OPTIMUM

RS = SOURCE RS = RESISTANCE

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Bandwidth = 1.0 Hz

10

8.0

6.0

MMBT4401W

NPN Silicon

Switching Transistor

f = 1.0 kHz

IC = 50 µA IC = 100

µ

IC = 500 IC = 1.0 mA

A

µ

A

4.0

2.0

0

0.1 2.0 5.0 10

1.00.50.20.01 0.02 0.05

20 50

100

Figure 9. Frequency Effects

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high–gain and a low–gain unit were

300

200

100

70

, Current Gain

50

fe

h

30

MMBT4401W UNIT 1 MMBT4401W UNIT 2

4.0

NF, Noise Figure (dB)

2.0

0

100 k50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

Figure 10. Source Resistance Effects

selected from the MMBT4401W lines, and the same units were used to develop the correspondingly numbered curves on each graph.

50 k

MMBT4401W UNIT 1

20 k

10 k

5.0 k

2.0 k

, Input Impedance (OHMS)

je

h

1.0 k

MMBT4401W UNIT 2

20

0.1 0.2 0.5 0.7 1.0

0.3

C

2.0 3.0 10

5.0 7.0

Figure 11. Current Gain

10

)

7.0

-4

5.0

3.0

2.0

1.0

0.7

0.5

, Voltage Feedback Ratio (X 10

0.3

re

h

0.2

0.1 0.2 0.5 0.7 1.0

0.3

MMBT4401W UNIT 1 MMBT4401W UNIT 2

2.0 3.0 10

5.0 7.0

Figure 13. V oltage Feedback Ratio

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01-Jun-2002 Rev. A

500

0.1 0.2 0.5 0.7 1.0

0.3

Figure 12. Input Impedance

100

50

20

10

5.0

, Output Admittance (µ mhos)

2.0

oe

h

1.0

0.1 0.2 0.5 0.7 1.0

0.3

Figure 14. Output Admittance

Any changing of specification will not be informed individual

2.0 3.0 10

MMBT4401W UNIT 1 MMBT4401W UNIT 2

2.0 3.0 10

5.0 7.0

Page 4 of 5

IC, Collector Current (mA)

IB, Base Current (mA)

IC, Collector Current (mA)

C

°

Elektronische Bauelemente

3.0

2.0

VCE = 1.0 V VCE = 10 V

MMBT4401W

NPN Silicon

Switching Transistor

ST ATIC CHARACTERISTICS

TJ = 125°C

1.0

0.7

0.5

, Normalized Current Gain

FE

h

0.3

0.2

0.1

1.0

0.8

0.6

0.4

0.2

, Collector-Emitter Voltage (V)

ce

V

0

0.2 0.3

IC = 1.0 mA

25°C

–55°C

0.5 2.0 3.0 10 50

1.00.7

30205.0 7.0

Figure 15. DC Current Gain

10 mA 100 mA

0.1 0.5 2.0 3.0 500.2 0.3

0.070.050.030.020.01

1.00.7 5.0 7.0

70

100

10 20 30

200 300

TJ = 25°C

500 mA

500

Figure 16. Collector Saturation Region

1.0 TJ = 25°C

V

@ IC/IB = 10

0.8

0.6

0.4

Voltage (V)

0.2

0.1 0.2 0.5

VBE @ VCE = 10 V

V

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20

BE(sat)

500100

200

500

Figure 17. “On” Voltages

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01-Jun-2002 Rev. A

Coefficient (mV/ )

+0.5

0

–0.5

–1.0

–1.5

–2.0

–2.5

q

for V

VC

qVB for V

0.1 0.2 0.5

1.0 2.0 5.0 10 20

Figure 18. T emperature Coefficients

Any changing of specification will not be informed individual

CE(sat)

BE

50 100

200

500

Page 5 of 5