Datasheet mmbt4401m3 Datasheet

Page 1

MMBT4401M3T5G

NPN Switching Transistor

The MMBT4401M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium.

Features

• Reduces Board Space

• This is a Halide−Free Device

• This is a Pb−Free Device

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COLLECTOR

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector −Emitter Voltage V

Collector −Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

CEO

CBO

EBO

40 Vdc

60 Vdc

6.0 Vdc

600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR−5 Board (Note 1) TA = 25°C Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

265

2.1

stg

470 °C/W

640

5.1mWmW/°C

195 °C/W

−55 to +150

mW/°C

°C

BASE

EMITTER

MARKING

SOT−723

CASE 631AA

AF = Specific Device Code M = Date Code

STYLE 1

DIAGRAM

AF M

ORDERING INFORMATION

Device Package Shipping

MMBT4401M3T5G SOT−723

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

8000/Tape & Reel

†

January, 2009 − Rev. 0

1 Publication Order Number:

MMBT4401M3/D

Page 2

MMBT4401M3T5G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V

Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V

Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V

Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) I

Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) I

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

Base −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) f

Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C

Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C

Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h

Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h

Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h

Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Delay Time

Rise Time t

Storage Time

Fall Time t

(VCC = 30 Vdc, VEB = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

(BR)CEO

(BR)CBO

(BR)EBO

BEV

CEX

CE(sat)

BE(sat)

40 − Vdc

60 − Vdc

6.0 − Vdc

− 0.1

20 40 80

100

−

300

−

mAdc

Vdc

−

0.4

0.75

Vdc

0.75

−

0.95

1.2

250 − MHz

− 6.5 pF

− 30 pF

1.0 15

0.1 8.0 X 10

40 500 −

1.0 30

mmhos

− 15

− 20

− 225

− 30

−

− 4

+16 V 0

-2.0 V

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V

1.0 to 100 ms, DUTY CYCLE ≈ 2.0%

200 W

+16 V

-14 V

< 2.0 ns

1.0 kW CS* < 10 pF

Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn−On Time Figure 2. Turn−Off Time

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1.0 to 100 ms, DUTY CYCLE ≈ 2.0%

1.0 kW

< 20 ns

-4.0 V

+30 V

200 W

CS* < 10 pF

Page 3

500

450

400

350

300

250

200

150

h , DC CURRENT GAIN

100

1.2

1.0

0.8

0.6

TJ = 150°C

25°C

-55°C

0.01

IC = 1.0 mA

10 mA

MMBT4401M3T5G

0.1

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain

100 mA

300 mA

500 mA

VCE = 5.0 V VCE = 2.0 V V

= 1.0 V

0.4

0.2

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.35

0.30

0.25

0.20

0.15

0.10

0.05

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.001

IC/IB = 10

0.0001

0.001

IC, COLLECTOR CURRENT (A)

0.01 0.1

25°C

0.01 0.1

Figure 5. Collector−Emitter Saturation Voltage

vs. Collector Current

110

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

+0.5

150°C

-55°C

-0.5

-1.0

-1.5

COEFFICIENT (mV/ C)°

-2.0

-2.5

Figure 6. Temperature Coefficients

qVC for V

CE(sat)

qVB for V

1.0 2.0 5.0 10 20 50 100 5002000.1 0.2 0.5

IC, COLLECTOR CURRENT (mA)

100

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Page 4

MMBT4401M3T5G

1.1 IC/IB = 10

1.0

0.9

0.8

0.7

, BASE−EMITTER

0.6

0.5

BE(sat)

SATURATION VOLTAGE (V)

0.4

0.3

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 7. Base−Emitter Saturation Voltage vs.

Collector Current

, INPUT CAPACITANCE (pF)

ibo

Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)

45 51520 354045

Figure 9. Input Capacitance vs. Emitter Base

Voltage

1.0

0.9

0.8

0.7

0.6

VOLTAGE (V)

0.5

, BASE−EMITTER TURN ON

0.4

BE(on)

0.3

10.10.010.0010.0001

8.5

7.5

6.5

5.5

4.5

3.5

, OUTPUT CAPACITANCE (pF)

2.5

obo

63210

1.5

VCE = 2.0 V

−55°C

25°C

150°C

10.10.010.0010.0001

Figure 8. Base−Emitter Turn On Voltage vs.

Collector Current

503025100

Figure 10. Output Capacitance vs. Collector

Base Voltage

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Page 5

MMBT4401M3T5G

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

−X−

−Y−

X0.08 (0.0032) Y

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

0.40

0.0157

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55 b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17 D 1.15 1.20 1.25 E 0.75 0.80 0.85 e 0.40 BSC

H 1.15 1.20 1.25

L 0.15 0.20 0.25

INCHES

MIN NOM MAX

0.018 0.020 0.022

0.0059 0.0083 0.0106

0.010 0.012 0.015

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

0.40

0.0157

1.0

0.039

0.40

0.0157

0.40

0.0157

0.40

0.0157

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MMBT4401M3/D