Datasheet MMBT4401LT1, MMBT4401LT3 Datasheet (MOTOROLA)

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SEMICONDUCTOR TECHNICAL DATA

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by MMBT4401LT1/D

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation

Alumina Substrate,

Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBT4401LT1 = 2X

CEO CBO EBO

JA D

stg

COLLECTOR

BASE

EMITTER

40 Vdc 60 Vdc

6.0 Vdc

600 mAdc

225

1.8 556 °C/W 300

2.4 417 °C/W

–55 to +150 °C

mW/°C



Motorola Preferred Device

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

(3)

Symbol Min Max Unit

(BR)CEO

(BR)CBO

(BR)EBO

BEV

CEX

40 —

60 —

6.0 —

— 0.1

Vdc

µAdc

Page 2

MMBT4401LT1

(

ELECTRICAL CHARACTERISTICS (continued) (T

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

Base–Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

(3)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time Rise Time Storage Time Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

(VCC = 30 Vdc, VEB = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

= 25°C unless otherwise noted)

CE(sat)

BE(sat)

t t t

Vdc

MHz

X 10

mhos

—

kΩ

–4

—

20 40 80

100

— —

0.75 —

250 —

— 6.5

— 30

1.0 15

0.1 8.0

40 500

1.0 30

— 15

— 20 — 225 — 30

— — —

300

—

0.4

0.75

0.95

1.2

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V

+16 V 0

–2.0 V

1.0 to 100 DUTY CYCLE

< 2.0 ns

1.0 k

≈

2.0%

200

Ω

CS* < 10 pF

Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

–14 V

1.0 to 100 DUTY CYCLE

< 20 ns

1.0 k

≈

2.0%

Ω

–4.0 V

Figure 1. T urn–On Time Figure 2. T urn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

+30 V

200

Ω

CS* < 10 pF

Page 3

TRANSIENT CHARACTERISTICS

C 100°C

MMBT4401LT1

7.0

5.0

CAPACITANCE (pF)

3.0

2.0

0.1 2.0 5.0 10 REVERSE VOL TAGE (VOLTS)

3.01.00.50.30.2

Figure 3. Capacitances

100

70 50

t, TIME (ns)

obo

IC/IB = 10

tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0

30 50

7.0 VCC = 30 V

5.0

IC/IB = 10

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

0.1

10 20 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100

70 50

t, TIME (ns)t

200

300 500

VCC = 30 V IC/IB = 10

7.0

5.0 10 20 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

300

200

100

, STORAGE TIME (ns)

′

10 20 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

200 300 500

ts′

= ts – 1/8 t IB1 = I IC/IB = 10 to 20

200 300

500

7.0

5.0 10 20 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise and Fall Times

100

70 50

30 20

, FALL TIME (ns)

7.0

5.0 10 20 50 70 100

IC/IB = 10

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC/IB = 20

200 300 500

VCC = 30 V IB1 = I

200 300

500

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Page 4

MMBT4401LT1

IC = 1.0 mA, RS = 150

8.0

6.0

IC = 500 µA, RS = 200 IC = 100 µA, RS = 2.0 k IC = 50 µA, RS = 4.0 k

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Bandwidth = 1.0 Hz

Ω

RS = OPTIMUM

RS = SOURCE RS = RESISTANCE

8.0

6.0

f = 1.0 kHz

IC = 50 µA IC = 100 IC = 500 IC = 1.0 mA

4.0

NF, NOISE FIGURE (dB)

2.0

0.1 2.0 5.0 10

1.00.50.20.01 0.02 0.05

f, FREQUENCY (kHz)

20 50

100

Figure 9. Frequency Effects

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high–gain and a low–gain unit were

300

200

100

, CURRENT GAIN

MMBT4401L T1 UNIT 1 MMBT4401L T1 UNIT 2

4.0

NF, NOISE FIGURE (dB)

2.0

RS, SOURCE RESISTANCE (OHMS)

100 k50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

Figure 10. Source Resistance Effects

selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.

50 k

MMBT4401L T1 UNIT 1

20 k

10 k

5.0 k

2.0 k

, INPUT IMPEDANCE (OHMS)

1.0 k

MMBT4401L T1 UNIT 2

0.1 0.2 0.5 0.7 1.0

0.3 IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

–4

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.2

0.1 0.2 0.5 0.7 1.0

0.3 IC, COLLECTOR CURRENT (mA)

Figure 13. V oltage Feedback Ratio

2.0 3.0 10

MMBT4401L T1 UNIT 1 MMBT4401L T1 UNIT 2

2.0 3.0 10

5.0 7.0

500

0.1 0.2 0.5 0.7 1.0

0.3 IC, COLLECTOR CURRENT (mA)

2.0 3.0 10

5.0 7.0

Figure 12. Input Impedance

100

5.0

2.0

h , OUTPUT ADMITTANCE ( mhos)

1.0

0.1 0.2 0.5 0.7 1.0

0.3 IC, COLLECTOR CURRENT (mA)

MMBT4401L T1 UNIT 1 MMBT4401L T1 UNIT 2

2.0 3.0 10

5.0 7.0

Figure 14. Output Admittance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Page 5

3.0

2.0

MMBT4401LT1

ST ATIC CHARACTERISTICS

VCE = 1.0 V VCE = 10 V

TJ = 125°C

1.0

0.7

0.5

0.3

h , NORMALIZED CURRENT GAIN

0.2

1.0

0.8

0.6

0.4

0.2

0.1

0.2 0.3

IC = 1.0 mA

25°C

–55°C

0.5 2.0 3.0 10 50

1.00.7 IC, COLLECTOR CURRENT (mA)

30205.0 7.0

Figure 15. DC Current Gain

10 mA 100 mA

100

200 300

TJ = 25°C

500 mA

500

V , COLLECTOR–EMITTER VOLT AGE (VOLTS)

1.0

0.8

0.6

0.4

VOLTAGE (VOLTS)

0.2

0.1 0.2 0.5

TJ = 25°C

0.070.050.030.020.01

BE(sat)

VBE @ VCE = 10 V

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

Figure 17. “On” Voltages

0.1

0.5 2.0 3.0 500.2 0.3

IB, BASE CURRENT (mA)

1.00.7 5.0 7.0

Figure 16. Collector Saturation Region

+0.5

@ IC/IB = 10

500100

200

500

COEFFICIENT (mV/ C)

–0.5

–1.0

–1.5

–2.0

–2.5

0.1 0.2 0.5

Figure 18. T emperature Coefficients

10 20 30

for V

CE(sat)

qVB for V

1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

50 100

200

500

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Page 6

MMBT4401LT1

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection

0.037

0.95

0.035

0.9

SOT–23 POWER DISSIP ATION

The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T die, R ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows:

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

, the maximum rated junction temperature of the

J(max)

, the thermal resistance from the device junction to

θJA

PD =

150°C – 25°C

556°C/W

J(max)

θJA

– T

= 225 milliwatts

0.031

0.8

SOT–23

interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.

0.037

0.95

0.079

2.0

inches

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Page 7

P ACKAGE DIMENSIONS

MMBT4401LT1

CASE 318–08

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50

G 0.0701 0.0807 1.78 2.04

H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0180 0.0236 0.45 0.60 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

MILLIMETERS

SOT–23 (TO–236AB)

ISSUE AE

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Page 8

MMBT4401LT1

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT4401LT1/D

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