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MMBT4354
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switch requiring collector currents to 500mA.
• Sourced from process 67.
• TN4033A for characteristics.
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Collector-Emitter Voltage -60 V
Collector-Base Voltage -60 V
Emitter-Base Voltage -5.0 V
Collector Current - Continuous -800 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
3
1
1. Base 2. Emitter 3. Collector
2
SOT-23
Mark: 79
MMBT4354
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Sustaining Voltage * IC = -1.0mA, IB = 0 -60 V
Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V
Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V
Collector Cut-off Current VCB = -50V, IE = 0 -50 nA
Emitter Cut-off Current VEB = -5.0V, VCE = 0 -10 µA
On Characteristics *
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA
CE
(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA
V
BE
(on) Base-Emitter On Voltage VCE = -0.5V, IC = -500mA -1.1 V
V
BE
DC Current Gain VCE = -5V, IC = -0.1mA
= -5V, IC = -1.0mA
V
CE
V
= -5V, IC = -10mA
CE
= -5V, IC = -100mA
V
CE
= -5V, IC = -500mA
V
CE
I
= -500mA, IB = -50mA
C
= -500mA, IB = -50mA
I
C
25
40
50
40
30
500
-0.15
-0.50
-0.9
-1.1
Small Signal Characteristics
h
fe
Small Signal Current Gain IC = -50mA, VCE = -10V,
1.0 5.0
f = 100MHz
NF Noise Figure V
= -10V, IC = -100µA
CE
= 1.0kΩ, f = 1.0KHz,
R
S
= 1.0Hz
B
W
2.0 dB
Switching Characteristics
t
on
t
off
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Turn-On Time IC = -500mA, VCC = -30V
I
= IB2 = -50mA
Turn-Off Time 400 ns
B1
100 ns
V
V
V
V
©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
Page 2
MMBT4354
Thermal Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
mW
mW/°C
©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
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Package Dimensions
0.40
±0.03
MMBT4354
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
Rev. A, October 2003©2003 Fairchild Semiconductor Corporation
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This dat asheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I5
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
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