Datasheet mmbt4124lt1 Datasheet

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Page 1

MMBT4124LT1G

General Purpose Transistor

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector− Emitter Voltage V

Collector− Base Voltage V

Emitter− Base Voltage V

Collector Current − Continuous I

CEO

CBO

EBO

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR−5 Board (Note 1) @TA = 25°C Derate above 25°C

Thermal Resistance, Junction−to−Ambient R

Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient R

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.



stg

25 Vdc

30 Vdc

5.0 Vdc

200 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

−55 to +150 °C

mW/°C

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COLLECTOR

BASE

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

MARKING DIAGRAM

ZC M G

ZC = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

August, 2009 − Rev. 2

ORDERING INFORMATION

Device Package Shipping

MMBT4124LT1G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

3000 / Tape & Reel

MMBT4124LT1/D

†

Page 2

MMBT4124LT1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage (Note 3)

= 1.0 mAdc, IE = 0)

Collector− Base Breakdown Voltage

(IC = 10 Adc, IE = 0)

Emitter− Base Breakdown Voltage

(IE = 10 Adc, IC = 0)

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc)

Collector− Emitter Saturation Voltage (Note 3)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base−Emitter Saturation Voltage (Note 3)

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current− Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Collector−Base Capacitance

(IE = 0, VCB = 5.0 V, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz)

Current Gain − High Frequency

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)

Noise Figure

(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)

3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

CE(sat )

BE(sat)

ibo

25 − Vdc

30 − Vdc

5.0 − Vdc

− 50 nAdc

120

360

−

− 0.3 Vdc

− 0.95 Vdc

300 − MHz

− 8.0 pF

− 4.0 pF

120 480 −

|hfe|

3.0

120

−

480

NF − 5.0 dB

−

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

0.2 0.3 0.5 0.7 REVERSE BIAS VOLTAGE (VOLTS)

Figure 1. Capacitance

ibo

obo

1.0 2.0 3.0 5.0 7.0 10 20

200

100

70 50

TIME (ns)

10.0

7.0

30 40

5.0

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VCC = 3 V IC/IB = 10 V

= 0.5 V

EB(off)

1.0

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

Figure 2. Switching Times

Page 3

NF, NOISE FIGURE (dB)

SOURCE RESISTANCE = 200  I

= 1 mA

SOURCE RESISTANCE = 500  IC = 100 A

0.1

Figure 3. Frequency Variations

AUDIO SMALL−SIGNAL CHARACTERISTICS

SOURCE RESISTANCE = 200  IC = 0.5 mA

SOURCE RESISTANCE = 1 k IC = 50 A

12 4 1020400.2 0.4

f, FREQUENCY (kHz)

MMBT4124LT1G

NOISE FIGURE

= 5 Vdc, TA = 25°C)

Bandwidth = 1.0 Hz

f = 1 kHz

NF, NOISE FIGURE (dB)

100

h PARAMETERS

(VCE = 10 V, f = 1 kHz, TA = 25°C)

0.1 1.0 2.0 4.0 10 20 400.2 0.4 100

IC = 1 mA

IC = 0.5 mA

IC = 50 A

IC = 100 A

RS, SOURCE RESISTANCE (k)

Figure 4. Source Resistance

300

200

100

, CURRENT GAIN

0.1 0.2 1.0 2.0

0.5

IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain

5.0

2.0

5.0 10

100



h , OUTPUT ADMITTANCE ( mhos)

0.1 0.2 1.0 2.0

0.5

IC, COLLECTOR CURRENT (mA)

Figure 6. Output Admittance

-4

7.0

5.0

3.0

2.0

5.0 10

1.0

, INPUT IMPEDANCE (k )Ω

0.5

0.2

0.1 0.2 1.0 2.0 5.0 100.5 IC, COLLECTOR CURRENT (mA)

Figure 7. Input Impedance

1.0

0.7

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.5

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0.1 0.2 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA)

Figure 8. Voltage Feedback Ratio

100.5

Page 4

2.0

MMBT4124LT1G

STATIC CHARACTERISTICS

TJ = +125°C

VCE = 1 V

1.0

0.7

0.5

0.3

0.2

h , DC CURRENT GAIN (NORMALIZED)

0.1

1.0

0.8

0.6

0.4

0.1

IC = 1 mA

0.5 2.0 3.0 10 50 700.2 0.3

+25°C

-55°C

IC, COLLECTOR CURRENT (mA)

Figure 9. DC Current Gain

10 mA

1001.00.7 20030205.0 7.0

TJ = 25°C

30 mA 100 mA

0.2

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.070.050.030.020.01

Figure 10. Collector Saturation Region

1.2 TJ = 25°C

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

1.0 2.0 5.0 10 20 500100

IC, COLLECTOR CURRENT (mA)

CE(sat)

@ IC/IB = 10

BE(sat)

VBE @ VCE = 1 V

@ IC/IB = 10

Figure 11. “On” Voltages

0.1

0.5 2.0 3.0 100.2 0.3

IB, BASE CURRENT (mA)

1.0

0.5

-0.5

-1.0

-1.5

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-2.0

200

0 60 80 120 140 160 18020 40 100 200

1.00.7 5.0 7.0

+25°C to +125°C

VC for V

CE(sat)

-55°C to +25°C

+25°C to +125°C

VB for V

BE(sat)

IC, COLLECTOR CURRENT (mA)

Figure 12. Temperature Coefficients

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Page 5

MMBT4124LT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

SEE VIEW C

0.25

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003

D 2.80 2.90 3.04 0.110

E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

2.0

0.079

0.9

0.035

SCALE 10:1

0.8

inches

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MMBT4124LT1/D