Datasheet mmbt3906w Datasheet

Elektronische Bauelemente

MMBT3906W

PNP Silicon

General Purpose Transistor

FEATURES

Epitaxial Planar Die Construction

·

Complementary NPN Type Available

·

(MMBT3904W)

Ideal for Medium Power Amplification and

·

Switching

"Lead free is available"

COLLECTOR

3

1

BASE

2

EMITTER

1

A suffix of "-C" specifies halogen & lead-free

3

2

SC-70

SOT-323

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector– Emitter Voltage V

Collector– Base Voltage V

Emitter– Base Voltage V

Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

T

= 25°C

A

Derate above 25°C

Thermal Resistance Junction to Ambient

Total Device Dissipation

Alumina Substrate,

Derate above 25°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature TJ, T

(2)

T

A

= 25°C

(1)

DEVICE MARKING

MMBT3906W = 2A, K5N

RoHS Compliant Product

Top View

D

CEO

CBO

EBO

P

R

P

R

C

D

q

JA

D

q

JA

stg

–5.0 Vdc

–200 mAdc

– 55 to +150 °C

A

L

S

B

GV

C

H

–40 Vdc

225

1.8

556 °C/W

300

2.4

417 °C/W

mW

mW/°C

mW

mW/°C

SOT-323(SC-70)

Dim Min Max

A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400

K

J

V 0.280 0.420

All Dimension in mm

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector– Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)

Collector– Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

Emitter– Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

Base Cutoff Current

(VCE = –30 Vdc, VEB = –3.0 Vdc)

Collector Cutoff Current

(VCE = –30 Vdc, VEB = –3.0 Vdc)

1. FR– 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

http://www.SeCoSGmbH.com

01-Jun-2004 Rev. B

(3)

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

REM : Thermal Clad is a trademark of the Bergquist Company.

Any changing of specification will not be informed individual

–40 —

–5.0 —

— –50

Vdc

nAdc

Page 1 of 5

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

(3)

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc)

H

FE

60 80

100

60 30

— —

300

— —

—

Collector– Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc)

V

CE(sat)

— —

–0.25

–0.4

Vdc

Base – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc)

V

BE(sat)

–0.65

—

–0.85 –0.95

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current– Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)

f

T

250 —

MHz

Output Capacitance

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— 4.5

pF

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

C

ibo

— 10

pF

Input Impedance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

h

ie

2.0 12

kΩ

Voltage Feedback Ratio

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

h

re

0.1 10

X 10

– 4

Small– Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

h

fe

100 400

—

Output Admittance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

h

oe

3.0 60

m

mhos

Noise Figure

(IC = –100 mAdc, VCE = –5.0 Vdc, R

S

= 1.0 kΩ, f = 1.0 kHz)

NF

— 4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

CC

= –3.0 Vdc, VBE = 0.5 Vdc,

t

d

— 35

Rise Time

(VCC = –3.0 Vdc, VBE = 0.5 Vdc,

IC = –10 mAdc, IB1 = –1.0 mAdc)

t

r

— 35

ns

Storage Time

CC

= –3.0 Vdc, IC = –10 mAdc,

t

s

— 225

Fall Time

(VCC = –3.0 Vdc, IC = –10 mAdc,

IB1 = IB2 = –1.0 mAdc)

t

f

— 75

ns

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916

CS < 4 pF*

3 V

275

10 k

CS < 4 pF*

< 1 ns

+0.5 V

10.6 V 300 ns

Duty Cycle = 2%

< 1 ns

+9.1 V

10.9 V

Duty Cycle = 2%

t

1

0

10 < t1 < 500

m

s

* Total shunt capacitance of test jig and connectors

Elektronische Bauelemente

MMBT3906W

PNP Silicon

General Purpose Transistor

(V

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01-Jun-2004 Rev. B

Any changing of specification will not be informed individual

Page 2 of 5

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

Reverse Bias (V)

2.0

3.0

5.0

7.0

10

1.0

0.1

Figure 4. Charge Data

IC, Collector Current (mA)

5000

1.0

VCC = 40 V IC/IB = 10

Q, Charge (pC)

3000 2000

1000

500

300 200

700

100

50

70

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

Capacitance (pF)

1.0 2.0 3.0 5.0 7.0 10 20

30 40

0.2 0.3 0.5 0.7

Q

T

Q

A

C

ibo

C

obo

TJ = 25°C TJ = 125

°

C

30 50

200

10

30

7

20

70

100

200

300

500

50

1.0 2.0 3.0 10 20

705100

5.0 7.0

30 50

200

10

30

7

20

t , Fall Time (ns)

f

VCC = 40 V IB1 = I

B2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

500

300 200

Elektronische Bauelemente

MMBT3906W

General Purpose Transistor

PNP Silicon

100

70 50

Time (ns)

705100

IC, Collector Current (mA)

Figure 6. Fall Time

Any changing of specification will not be informed individual

1.0 2.0 3.0 10 20

5.0 7.0

IC, Collector Current (mA)

Figure 5. Turn–On Time

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01-Jun-2004 Rev. B

Page 3 of 5

Elektronische Bauelemente

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

(VCE = –5.0 Vdc, T

NOISE FIGURE VARIATIONS

= 25°C, Bandwidth = 1.0 Hz)

A

MMBT3906W

PNP Silicon

General Purpose Transistor

5.0 SOURCE RESISTANCE = 200

IC = 1.0 mA

4.0

3.0

2.0

NF, Noise Figure (dB)

SOURCE RESISTANCE = 2.0 k

1.0

IC = 100

m

A

0

0.1

0.2 0.4

300

200

W

SOURCE RESISTANCE = 200 IC = 0.5 mA

SOURCE RESISTANCE = 2.0 k IC = 50

1.0 2.0 4.0 10 20

f, Frequency (kHz)

W

m

A

Figure 7.

(VCE = –10 Vdc, f = 1.0 kHz, T

40

100

h PARAMETERS

12

f = 1.0 kHz

10

8

6

4

NF, Noise Figure (dB)

2

0

0.1 1.0 2.0 4.0 10 20

0.2 0.4

Rg, Source Resistance (k OHMS)

IC = 1.0 mA

IC = 0.5 mA

Figure 8.

= 25°C)

A

100

70

50

m

30

IC = 50 mA

IC = 100 mA

40

100

70

fe

h , DC Current Gain

50

30

0.1 0.2 1.0 2.0

0.3 0.5 3.0

0.7

IC, Collector Current (mA)

Figure 9. Current Gain

20

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

ie

h , Input Impedance (k OHMS)

0.3

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0

0.7

IC, Collector Current (mA)

Figure 11. Input Impedance

5.0 10

7.0

5.0 10

7.0

20

oe

10

h , Output Admittance ( mhos)

7

5

0.1 0.2 1.0 2.0

0.3 0.5 3.0

0.7

IC, Collector Current (mA)

Figure 10. Output Admittance

10

7.0

–4

5.0

3.0

2.0

1.0

re

h , Voltage Feedback Ratio (X 10 )

0.7

0.5

0.1 0.2 1.0 2.0

0.3 0.5 3.0

0.7

IC, Collector Current (mA)

Figure 12. Voltage Feedback Ratio

5.0 10

7.0

5.0

10

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01-Jun-2004 Rev. B

Any changing of specification will not be informed individual

Page 4 of 5

Elektronische Bauelemente

TYPICAL STATIC CHARACTERISTICS

MMBT3906W

PNP Silicon

General Purpose Transistor

2.0

1.0

0.7

0.5

0.3

0.2

FE

h , DC Current Gain (Normalized)

0.1

1.0

0.8

0.6

0.4

0.1

IC = 1.0 mA

0.2 0.3

TJ = +125°C

+25°C

– 55°C

0.5 2.0 3.0 10 50

1.00.7

IC, Collector Current (mA)

30205.0 7.0

Figure 13. DC Current Gain

10 mA 30 mA 100 mA

70

VCE = 1.0 V

100

TJ = 25°C

200

0.2

CE

V , Collector Emitter Voltage (V)

0

1.0

TJ = 25°C V

0.8

0.6

0.4

V, Voltage (V)

0.2

0

1.0 2.0 5.0 10 20

IC, Collector Current (mA)

Figure 15. “ON” Voltages

BE(sat)

V

CE(sat)

0.070.050.030.020.01

0.1

IB, Base Current (mA)

0.5 2.0 3.0 100.2 0.3

Figure 14. Collector Saturation Region

1.0

@ IC/IB = 10

°

0.5

VBE @ VCE = 1.0 V

0

– 0.5

@ IC/IB = 10

50

100

200

– 1.0

, Temperature Coefficients (mV/ C)

V

– 1.5

q

– 2.0

1.00.7 5.0 7.0

q

FOR V

VC

0 60 80 120 140 160

q

VB

20 40

CE(sat)

FOR V

BE(sat)

IC, Collector Current (mA)

+25°C TO +125°C

– 55°C TO +25°C

+25°C TO +125°C

– 55°C TO +25°C

100

Figure 16. Temperature Coefficients

180

200

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01-Jun-2004 Rev. B

Any changing of specification will not be informed individual

Page 5 of 5