Datasheet mmbt3906tt1 Datasheet

Page 1
MMBT3906TT1
l l
s
General Purpose Transistors
PNP Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Collector−Emitter Voltage V Collector−Base Voltage V Emitter−Base Voltage V Collector Current − Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1) @TA = 25°C Derated above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @TA = 25°C Derated above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range TJ, T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
= 25°C)
A
CEO CBO EBO
P
R
P
R
C
D
q
JA
D
q
JA
−55 to +150 °C
stg
−40 Vdc
−40 Vdc
−5.0 Vdc
−200 mAdc
200
1.6
600 °C/W
300
2.4
400 °C/W
mW
mW/°C
mW
mW/°C
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GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT−416/SC−75
STYLE 1
MARKING DIAGRAM
2A M G
G
1
2A = Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
ORDERING INFORMATION
Device Package Shipping
MMBT3906TT1 SOT−416 MMBT3906TT1G SOT−416
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
1 Publication Order Number:
3000 / Tape & Ree 3000 / Tape & Ree
MMBT3906TT1/D
†
Page 2
MMBT3906TT1
ELECTRICAL CHARACTERISTICS (T
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc)
= 25°C unless otherwise noted)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
h
V
CE(sat)
V
BE(sat)
FE
−40 −
−40 −
−5.0 −
− −50
− −50
60 80
100
60 30
−
−
−
−
300
−
−
−0.25
−0.4
−0.65−−0.85
−0.95
Vdc
Vdc
Vdc
nAdc
nAdc
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance1
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Small−Signal Current Gain
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) t Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) t Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) t Fall Time
(IB1 = IB2 = −1.0 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
250 −
− 4.5
− 10.0
2.0 12
0.1 10
100 400
3.0 60
NF
MHz
pF
pF
k W
X 10
−
mmhos
dB
−4
− 4.0
d
r
s
t
f
− 35
− 35
− 225
− 75
ns
ns
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2
Page 3
MMBT3906TT1
1.0 D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Normalized Thermal Response
t, TIME (s)
+10.6 V
10
7.0
5.0
3.0
CAPACITANCE (pF)
2.0
1.0
< 1 ns
300 ns
DUTY CYCLE = 2%
10 k
Figure 2. Delay and Rise Time
Equivalent Test Circuit
C
obo
C
ibo
0.1
0.2 0.3 0.5 0.7
1.0 2.0 3.0 5.0 7.0 10 20
REVERSE BIAS VOLTAGE (VOLTS)
3 V
275
CS < 4 pF*
10 < t1 < 500 ms
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
+9.1 V
0
t
1
< 1 ns
10.9 V
Figure 3. Storage and Fall Time
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C
5000
VCC = 40 V
3000
IC/IB = 10
2000
1000
700 500
300
Q, CHARGE (pC)
200
100
70
30 40
50
1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
3 V
10 k
1N916
Equivalent Test Circuit
Q
T
Q
275
C
< 4 pF*
S
A
Figure 4. Capacitance
Figure 5. Charge Data
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Page 4
MMBT3906TT1
500
300 200
100
70 50
30
TIME (ns)
20
10
7
1.0 2.0 3.0 10 20
5.0 7.0 30 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−On Time
5.0 SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
3.0
2.0
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 2.0 k
1.0
IC = 100 mA
SOURCE RESISTANCE = 200 W IC = 0.5 mA
500
tr @ VCC = 3.0 V
td @ VOB = 0 V
IC/IB = 10
705100
15 V
40 V
2.0 V
200
300 200
100
70 50
30
f
t , FALL TIME (ns)
20
10
7
1.0 2.0 3.0 10 20 7051005.0 7.0 30 50 200
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
Figure 7. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
f = 1.0 kHz
SOURCE RESISTANCE = 2.0 k IC = 50 mA
10
8.0
6.0
4.0
NF, NOISE FIGURE (dB)
2.0
IC = 0.5 mA
IC/IB = 20
IC = 1.0 mA
VCC = 40 V IB1 = I
B2
IC = 50 mA
IC = 100 mA
0
0.1
0.2 0.4
1.0 2.0 4.0 10 20
f, FREQUENCY (kHz)
40
100
Figure 8.
0
0.1 1.0 2.0 4.0 10 20
0.2 0.4
RS, SOURCE RESISTANCE (kW)
Figure 9.
40
100
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Page 5
300
h PARAMETERS
200
MMBT3906TT1
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
70
50
m
30
100
70
, CURRENT GAIN
fe
h
50
30
0.1 0.2 1.0 2.0
0.5
0.3 0.7 3.0 IC, COLLECTOR CURRENT (mA)
Figure 10. Current Gain
20
10
7.0
Ω)
5.0
3.0
2.0
1.0
0.7
ie
0.5
h , INPUT IMPEDANCE (k
0.3
0.2
0.1 0.2 1.0 2.0
0.5
0.3 0.7 3.0 IC, COLLECTOR CURRENT (mA)
5.0 10
7.0
5.0 10
7.0
20
10
oe
h , OUTPUT ADMITTANCE ( mhos)
7.0
5.0
0.1 0.2 1.0 2.0
0.5
0.3 0.7 3.0 7.0 IC, COLLECTOR CURRENT (mA)
Figure 11. Output Admittance
10
7.0
−4
5.0
3.0
2.0
1.0
0.7
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
0.5
0.1 0.2 1.0 2.0
0.5
0.3 0.7 3.0 IC, COLLECTOR CURRENT (mA)
5.0 10
5.0
7.0
10
2.0
1.0
0.7
0.5
0.3
0.2
FE
h , DC CURRENT GAIN (NORMALIZED)
0.1
0.1
Figure 12. Input Impedance
0.2 0.3
0.5 2.0 3.0 10 50
1.00.7
STATIC CHARACTERISTICS
TJ = +125°C
+25°C
−55 °C
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
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5
Figure 13. Voltage Feedback Ratio
VCE = 1.0 V
70
30205.0 7.0
100
200
Page 6
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
IC = 1.0 mA
MMBT3906TT1
10 mA 30 mA 100 mA
0.1
0.070.050.030.020.01
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
0.5 2.0 3.0 100.2 0.3
1.00.7 5.0 7.0
TJ = 25°C
1.0 TJ = 25°C
0.8
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
0
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. “ON” Voltages
V
CE(sat)
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = 1.0 V
@ IC/IB = 10
50
100
200
1.0
0.5
qVC FOR V
0
−0.5
−1.0
qVS FOR V
−1.5
, TEMPERATURE COEFFICIENTS (mV/C)°θ
V
−2.0 0 60 80 120 140 160
20 40
CE(sat)
BE(sat)
IC, COLLECTOR CURRENT (mA)
+25°C TO +125°C
100 200
Figure 17. Temperature Coefficients
−55 °C TO +25°C
+25°C TO +125°C
−55 °C TO +25°C
180
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Page 7
MMBT3906TT1
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
b
3 PL
0.20 (0.008) D
M
C
−E−
3
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2
e
−D−
1
0.20 (0.008) E
H
E
A
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b
0.15 0.20 0.30 0.006 0.008 0.012
C 0.10 0.15 0.25 D 1.55 1.60 1.65 E
0.70 0.80 0.90 0.027 0.031 0.035
e 1.00 BSC L 0.10 0.15 0.20
H
1.50 1.60 1.70
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
INCHES
MIN NOM MAX
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT3906TT1/D
7
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