Datasheet mmbt3906lt1-d Datasheet

MMBT3906LT1G

General Purpose Transistor

PNP Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Peak (Note 3) I

CEO

CBO

EBO

C

CM

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1) @ T Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Substrate, (Note 2) @ T Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

= 25°C

A

= 25°C

A

P

D

R

q

JA

P

D

R

q

JA

stg

−40 Vdc

−5.0 Vdc

−200 mAdc

−800 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

−55 to +150 °C

mW

mW/°C

mW

mW/°C

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COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT−23 (TO−236)

CASE 318

STYLE 6

MARKING DIAGRAM

2A M G

G

1

2A = Specific Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

January, 2011 − Rev. 9

ORDERING INFORMATION

Device Package Shipping

MMBT3906LT1G SOT−23

(Pb−Free)

MMBT3906LT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

3,000 / Tape & Reel

10,000 / Tape & Reel

MMBT3906LT1/D

†

MMBT3906LT1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= −1.0 mAdc, IB = 0)

C

Collector−Base Breakdown Voltage

= −10 mAdc, IE = 0)

(I

C

Emitter−Base Breakdown Voltage

= −10 mAdc, IC = 0)

(I

E

Base Cutoff Current

(V

= −30 Vdc, VEB = −3.0 Vdc)

CE

Collector Cutoff Current

(V

= −30 Vdc, VEB = −3.0 Vdc)

CE

ON CHARACTERISTICS (Note 4)

DC Current Gain

(I

= −0.1 mAdc, VCE = −1.0 Vdc)

C

(IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc)

= −50 mAdc, VCE = −1.0 Vdc)

(I

C

(I

= −100 mAdc, VCE = −1.0 Vdc)

C

Collector−Emitter Saturation Voltage

(I

= −10 mAdc, IB = −1.0 mAdc)

C

(IC = −50 mAdc, IB = −5.0 mAdc)

Base −Emitter Saturation Voltage

(I

= −10 mAdc, IB = −1.0 mAdc)

C

(IC = −50 mAdc, IB = −5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

= −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

C

Output Capacitance

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(V

= −0.5 Vdc, IC = 0, f = 1.0 MHz)

EB

Input Impedance

(I

= −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

C

Voltage Feedback Ratio

(I

= −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

C

Small−Signal Current Gain

(I

= −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

C

Output Admittance

(I

= −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

C

Noise Figure

= −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

(I

C

SWITCHING CHARACTERISTICS

Delay Time

Rise Time t

Storage Time

Fall Time t

(VCC = −3.0 Vdc, VBE = 0.5 Vdc, I

= −10 mAdc, IB1 = −1.0 mAdc)

C

(VCC = −3.0 Vdc, IC = −10 mAdc,

I

= IB2 = −1.0 mAdc)

B1

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

H

V

CE(sat)

V

BE(sat)

f

C

obo

C

h

NF

t

FE

T

ibo

re

oe

d

−40 −

Vdc

−40 −

Vdc

−5.0 −

nAdc

− −50

nAdc

− −50

−

60 80

100

60 30

−

300

−

Vdc

−

−0.25

−0.4

Vdc

−0.65−−0.85

−0.95

MHz

250 −

pF

− 4.5

pF

− 10

ie

2.0 12

kW

X 10

− 4

0.1 10

fe

100 400

−

mmhos

3.0 60

dB

− 4.0

− 35

r

s

f

− 35

− 225

− 75

ns

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2

MMBT3906LT1G

+0.5 V

10.6 V

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

< 1 ns

10 k

300 ns

DUTY CYCLE = 2%

Figure 1. Delay and Rise Time

Equivalent Test Circuit

C

obo

C

ibo

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS (VOLTS)

Figure 3. Capacitance

3 V

+9.1 V

< 1 ns

275

0

C

< 4 pF*

S

10 < t

< 500 ms

1

DUTY CYCLE = 2%

10.9 V

t

1

* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C T

= 125°C

J

5000

700 500

300 200

100

70 50

VCC = 40 V I

= 10

C/IB

Q

T

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

1.0 IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

3000 2000

1000

Q, CHARGE (pC)

30 40

10 k

1N916

Equivalent Test Circuit

3 V

275

C

< 4 pF*

S

Q

A

500

300 200

100

70 50

30

TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time

tr @ VCC = 3.0 V

td @ VOB = 0 V

IC/IB = 10

15 V

40 V

2.0 V

705100

200

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f

t , FALL TIME (ns)

3

500

300 200

100

70 50

30 20

10

7

1.0 2.0 3.0 10 20

5.0 7.0

IC, COLLECTOR CURRENT (mA)

Figure 6. Fall Time

IC/IB = 20

IC/IB = 10

30 50

VCC = 40 V I

= I

B1

B2

705100

200

5.0 SOURCE RESISTANCE = 200 W

I

= 1.0 mA

C

4.0

3.0

2.0

NF, NOISE FIGURE (dB)

SOURCE RESISTANCE = 2.0 k

1.0

I

= 100 mA

C

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

SOURCE RESISTANCE = 200 W I

= 0.5 mA

C

SOURCE RESISTANCE = 2.0 k I

= 50 mA

C

MMBT3906LT1G

NOISE FIGURE VARIATIONS

12

f = 1.0 kHz

10

8

6

4

NF, NOISE FIGURE (dB)

2

IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

0

0.1

0.2 0.4

1.0 2.0 4.0 10 20 f, FREQUENCY (kHz)

Figure 7.

300

200

100

70

fe

h , DC CURRENT GAIN

50

30

0.1 0.2 1.0 2.0

0.3 0.5 3.0

0.7

IC, COLLECTOR CURRENT (mA)

Figure 9. Current Gain

40

100

0

0.1 1.0 2.0 4.0 10 20

0.2 0.4

h PARAMETERS

(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)

100

70

m

50

30

20

10

oe

h , OUTPUT ADMITTANCE ( mhos)

7

5.0 10

7.0

5

0.1 0.2 1.0 2.0

Rg, SOURCE RESISTANCE (k OHMS)

Figure 8.

0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)

0.7

Figure 10. Output Admittance

40

100

5.0 10

7.0

20

10

7.0

5.0

3.0

2.0

1.0

0.7

ie

0.5

h , INPUT IMPEDANCE (k OHMS)

0.3

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0

0.7

IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance

-4

re

h , VOLTAGE FEEDBACK RATIO (X 10 )

7.0

5.0 10

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4

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)

0.7

Figure 12. Voltage Feedback Ratio

5.0

7.0

10

1000

, DC CURRENT GAIN

FE

h

100

MMBT3906LT1G

TYPICAL STATIC CHARACTERISTICS

VCE = 1 V

TJ = 150°C

25°C

-55°C

CE

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

10

1.0

0.8

0.6

0.4

0.2

0

1.0

IC = 1.0 mA

10 100 1000

IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

10 mA 30 mA 100 mA

0.070.050.030.020.01

0.1 IB, BASE CURRENT (mA)

0.5 2.0 3.0 100.2 0.3

1.00.7 5.0 7.0

Figure 14. Collector Saturation Region

TJ = 25°C

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5

MMBT3906LT1G

0.50

0

IC/IB = 10

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

150°C

0.45

0.40

0.35

0.30

0.25

0.20

0.15

, COLLECTOR−EMITTER

0.10

SATURATION VOLTAGE (V)

CE(sat)

V

0.05

Figure 15. Collector Emitter Saturation Voltage

vs. Collector Current

1.4 VCE = 1 V

1.2

1.0

0.8

0.6

, BASE−EMITTER VOLTAGE (V)

0.4

BE(on)

V

0.2

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 17. Base Emitter Voltage vs. Collector

Current

1.0

0.5

0

qVC FOR V

CE(sat)

+25°C TO +125°C

-55°C TO +25°C

−55°C

25°C

, BASE−EMITTER

BE(sat)

V

SATURATION VOLTAGE (V)

10.10.010.001

1000

100

PRODUCT (MHz)

, CURRENT−GAIN−BANDWIDTH

T

f

10.10.010.0010.0001

1.4 IC/IB = 10

1.2

1.0

−55°C

0.8

0.6

0.4

0.2

25°C

150°C

Figure 16. Base Emitter Saturation Voltage vs.

Collector Current

VCE = 2 V T

= 25°C

A

10

IC, COLLECTOR CURRENT (mA)

Figure 18. Current Gain Bandwidth vs.

Collector Current

1

1 s

100 ms

Thermal Limit

0.1

10.10.010.0010.0001

10001001010.1

1 ms

10 ms

-0.5

-1.0

-1.5

, TEMPERATURE COEFFICIENTS (mV/ C)°

V

q

-2.0 0 60 80 120 140 160

qVB FOR V

20 40

BE(sat)

100

IC, COLLECTOR CURRENT (mA)

Figure 19. Temperature Coefficients Figure 20. Safe Operating Area

+25°C TO +125°C

-55°C TO +25°C

180

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200

IC (A)

0.01

Single Pulse Test @ T

= 25°C

0.001

6

A

1001010.10.01

VCE (Vdc)

A

A1

MMBT3906LT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D

3

E

12

b

e

SEE VIEW C

H

E

c

0.25

q

L

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070

L 0.10 0.20 0.30 0.004

L1

H

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

E

0 −−− 10 0 −−− 10q°°°°

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

ǒ

inches

mm

Ǔ

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MMBT3906LT1/D