Datasheet mmbt3906e Datasheet

PNP General Purpose Transistor

1/5

http://www.weitron.com.tw

The MMBT3906E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium.

MMBT3906E

3

2

1

SOT-1123

COLLECTOR

3

FEATURES :

• h 100-300

FE

• Low V

CE(sat)

≤ 0.4V

• Reduces Board Space

Maximum Ratings

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous

Thermal Characteristics

Characteristics Total Device Dissipation Derate above 25 °C

Thermal Resistance,Junction to Ambient

Total Device Dissipation Derate above 25 °C

Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Lead3

Junction and Storage Temperature Range

1.100mm 1 oz, copper traces.

2.500mm 1 oz, copper traces.

2 2

(1)

Ta=25 °C

(2)

Ta=25 °C

(2)

Symbol

V

CEO

V

CBO

V

EBO

I

C

Symbol Max

P

D

R

JA

θ

P

D

R

JA

θ

R

JL

Ψ

T

J,Tstg

Value

-40

-5.0

-200

290

2.3

432 347

2.8

360

143

-55 to +150

1

BASE

2

EMITTER

Unit Vdc Vdc Vdc

mAdc

Unit

mW

mW/ °C

°C/W

mW

mW/ °C

°C/W °C/W

°C

Device Marking

MMBT3906E=3

Electrical Characteristics

Characteristics Symbol

(Ta=25 °C Unless Otherwise noted)

Off Characteristics

(3)

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage (IC=10μAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=10μAdc, IC=0)

Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)

WEITRON

(IC=1.0mAdc.IB=0)

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CEX

Min Max

-40

-5.0

-

-50

Unit

Vdc

Vdc Vdc

nAdc

3-Aug-2012

MMBT3906E

Electrical Characteristics (T

Characteristics

On Characteristics

DC Current Gain

(IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc)

Collector-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc)

Base-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0 mAdc)

(IC= -50 mAdc, IB= -5.0 mAdc)

(3)

Small-signal Characteristics

=25 °C unless otherwise noted)

a

Symbol

h

FE

V

CE(sat)

V

BE(sat)

Min

60 80

100

60

30

-

-0.65

-

Max

-

300

-

-0.25

-0.4

-0.85

-0.95

Unit

-

Vdc

Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)

Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz)

Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz)

Noise Figure (V R

= -5.0 Vdc, I = 1.0 kΩ

CE

=-100 µAdc, , f=1.0 kHz)

C

S

Switching Characteristics

Delay Time Rise Time Storage Time Fall Time

3.Pulse Test:Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

(Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, I

(Vcc= -3.0Vdc, Ic= -10 mAdc

B1=I I B2= -1.0 mAdc)

B1= -1.0 mAdc)

C

f

T

obo

ibo

NF

td

tr

ts

tf

250

-

4.5

10.0

4.0

35 35

250

50

MHz

pF

dB

ns

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3-Aug-2012

2/5

MMBT3906E

0.40 IC/IB = 10

0.35

0.30

0.25

0.20

0.15

, COLLECTOR−EMITTER

0.10

SATURATION VOLTAGE (V)

CE(sat)

0.05

V

0

0.0001 1 , COLLECTOR CURRENT (A)

I

C

V

CE(sat)

25°C

= 150°C

−55°C

Figure 1. Collector Emitter Saturation Voltage vs.

Collector Current

350

300

250

200

150

100

, DC CURRENT GAIN (V)

FE

h

50

0.10.010.001

150°C (5.0 V)

150°C (1.0 V)

25°C (5.0 V)

25°C (1.0 V)

−55°C (5.0 V)

−55°C (1.0 V)

0

0.0001 0.01 1

0.001 , COLLECTOR CURRENT (A)

I

C

0.1

Figure 2. DC Current Gain vs. Collector Current

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3-Aug-2012

3/5

MMBT3906E

1.1

1.0

0.9

0.8

0.7

, BASE−EMITTER

0.6

0.5

BE(sat)

V

SATURATION VOLTAGE (V)

0.4

0.3

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, COLLECTOR−EMITTER

0.2

SATURATION VOLTAGE (V)

CE(sat)

V

0.1 0

IC/IB = 10

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

100 mA

80 mA 60 mA 40 mA

20 mA

IC = 10 mA

Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)

Figure 5. Saturation Region Figure 6. Input Capacitance

0.010.0010.0001

10.10.010.0010.0001

1.1

1.0

0.9

0.8

0.7

0.6

VOLTAGE (V)

0.5

, BASE−EMITTER TURN−ON

0.4

BE(on)

V

0.3

9.0

8.0

7.0

6.0

5.0

, INPUT CAPACITANCE (pF)

4.0

ibo

C

3.0

VCE = 2.0 V

−55°C

25°C

150°C

Figure 4. Base Emitter Turn−On Voltage vs.

Collector Current

C

ib

3.0 3.5 5.0

10.10.010.0010.0001

4.54.02.51.5 2.01.00.50

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6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

, OUTPUT CAPACITANCE (pF)

obo

1.5

C

1.0

C

ob

Vcb, COLLECTOR BASE VOLTAGE (V)

Figure 7. Output Capacitance

4/5

30252015105.00

3-Aug-2012

MMBT3906E

SOT-1123 Package Outline Dimensions

b1

D

−X−

−Y−

1

3

2

e

E

b

0.08 (0.0032)

XY

A

c

H

E

L

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

DIM MIN NOM MAX

b1 0.10 0.15 0.20 0.004 0.006 0.008

H

MILLIMETERS

A 0.34 0.37 0.40

b 0.15 0.20 0.25 c 0.07 0.12 0.17

D 0.75 0.80 0.85

E 0.55 0.60 0.65 e 0.35 0.014

0.95 1.00 1.05

E

L 0.05 0.10 0.15

INCHES

MIN NOM MAX

0.013 0.015 0.016

0.006 0.008 0.010

0.003 0.005 0.007

0.030 0.031 0.033

0.022 0.024 0.026

0.037 0.039 0.041

0.002 0.004 0.006 STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.35

0.30

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0.25

0.90

0.40

DIMENSIONS: MILLIMETERS

3-Aug-2012

5/5